이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 500V 9.9A TO220FP
|
패키지: TO-220-3 Full Pack |
재고45,180 |
|
MOSFET (Metal Oxide) | 500V | 9.9A (Tc) | 13V | 3.5V @ 260µA | 24.8nC @ 10V | 584pF @ 100V | ±20V | Super Junction | 29.2W (Tc) | 380 mOhm @ 3.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 20V 75A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고12,180 |
|
MOSFET (Metal Oxide) | 20V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | ±20V | - | 90W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 11A 8DFN
|
패키지: 8-PowerSMD, Flat Leads |
재고4,160 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta), 29A (Tc) | 5V, 10V | 3V @ 250µA | 24nC @ 15V | 1400pF @ 15V | ±25V | - | 4.1W (Ta), 25W (Tc) | 18 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 75V 110A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,176 |
|
MOSFET (Metal Oxide) | 75V | 110A (Tc) | 10V | 4.5V @ 250µA | 105nC @ 10V | 4250pF @ 30V | ±20V | - | 3.75W (Ta), 208.3W (Tc) | 7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 20V 670MA SOT323-3
|
패키지: SC-70, SOT-323 |
재고7,632 |
|
MOSFET (Metal Oxide) | 20V | 670mA (Ta) | 2.5V, 4.5V | 600mV @ 250µA (Min) | 2.5nC @ 4.5V | - | ±12V | - | 290mW (Ta) | 430 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-247
|
패키지: TO-247-3 |
재고2,608 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 205nC @ 20V | 3000pF @ 25V | ±20V | - | 270W (Tc) | 9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC
|
패키지: TO-247-3 |
재고4,384 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 140nC @ 10V | 2700pF @ 25V | ±20V | - | 180W (Tc) | 600 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고177,600 |
|
MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | ±20V | - | 180W (Tc) | 11 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET P-CH 100V 90A ISOPLUS247
|
패키지: TO-247-3 |
재고7,984 |
|
MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 4V @ 250µA | 400nC @ 10V | 31400pF @ 25V | ±15V | - | 270W (Tc) | 13 mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 60A TO-247AD
|
패키지: TO-247-3 |
재고4,640 |
|
MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 5100pF @ 25V | ±20V | - | 360W (Tc) | 47 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 2A SSOT3
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고1,225,296 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 3V @ 250µA | 9nC @ 10V | 298pF @ 15V | ±20V | - | 500mW (Ta) | 80 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET NCH 650V 10.1A TO220-3
|
패키지: TO-220-3 Full Pack |
재고7,260 |
|
MOSFET (Metal Oxide) | 650V | 10.1A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | Super Junction | 28W (Tc) | 650 mOhm @ 2.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 1.7A SOT-223
|
패키지: TO-261-4, TO-261AA |
재고112,560 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Tc) | 10V | 4V @ 250µA | 7.5nC @ 10V | 250pF @ 25V | ±25V | - | 2W (Tc) | 350 mOhm @ 850mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 11.6A TO-220F
|
패키지: TO-220-3 Full Pack |
재고58,812 |
|
MOSFET (Metal Oxide) | 150V | 11.6A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 910pF @ 25V | ±25V | - | 53W (Tc) | 160 mOhm @ 5.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고19,980 |
|
MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4V @ 1mA | 17nC @ 10V | 700pF @ 25V | ±30V | - | 40W (Tc) | 4.3 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8
|
패키지: PowerPAK? SO-8 |
재고6,704 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 204nC @ 10V | 10500pF @ 20V | +20V, -16V | - | 104W (Tc) | 0.88 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Texas Instruments |
MOSFET P-CH 20V 104A 8VSON
|
패키지: 8-PowerVDFN |
재고36,756 |
|
MOSFET (Metal Oxide) | 20V | 104A (Tc) | 1.8V, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | ±12V | - | 2.8W (Ta), 96W (Tc) | 6.5 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 36A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고46,554 |
|
MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 105nC @ 10V | 4230pF @ 20V | ±20V | - | 3.5W (Ta), 7.8W (Tc) | 3.3 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics Corporation |
P CH MOS FET POWER SWITCHING
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22 nC @ 5 V | 2783 pF @ 15 V | ±20V | - | 83W (Tc) | 5.1mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
SMALL SIGNAL MOSFETS PG-SOT23-3
|
패키지: - |
재고265,626 |
|
MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 4.5V, 10V | 1.4V @ 26µA | 1 nC @ 10 V | 32 pF @ 25 V | ±20V | - | 360mW (Ta) | 3.5Ohm @ 230mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 18A TO220
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4V @ 250µA | 92 nC @ 10 V | 1640 pF @ 100 V | ±30V | - | 34W (Tc) | 202mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Renesas Electronics Corporation |
TRANSISTOR
|
패키지: - |
Request a Quote |
|
- | - | 28A (Tj) | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diotec Semiconductor |
IC
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 10V | 1.2V @ 250µA | 58 nC @ 10 V | 6850 pF @ 10 V | ±12V | - | 52W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (3x3) | 8-PowerVDFN |
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Rohm Semiconductor |
SICFET N-CH 1200V 24A TO247N
|
패키지: - |
재고1,338 |
|
SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | 574 pF @ 800 V | +22V, -4V | - | 134W | 137mOhm @ 7.6A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 77A (Tc) | 10V | 4V @ 130µA | 100 nC @ 10 V | 2375 pF @ 25 V | ±20V | - | 170W (Tc) | 15mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Goford Semiconductor |
N40V, 110A,RD<4M@10V,VTH1.0V~2.5
|
패키지: - |
재고195 |
|
MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 10 V | 2303 pF @ 20 V | ±20V | - | 160W (Tc) | 4mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO252AA
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 4V @ 250µA | 40 nC @ 10 V | 680 pF @ 100 V | ±30V | - | 78W (Tc) | 600mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |