페이지 1441 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,441/1,502
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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF7326D2TR
Infineon Technologies

MOSFET P-CH 30V 3.6A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고772,968
MOSFET (Metal Oxide)
30V
3.6A (Ta)
4.5V, 10V
1V @ 250µA
25nC @ 10V
440pF @ 25V
±20V
Schottky Diode (Isolated)
2W (Ta)
100 mOhm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot AOD208
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고334,272
MOSFET (Metal Oxide)
30V
18A (Ta), 54A (Tc)
4.5V, 10V
2.3V @ 250µA
35nC @ 10V
2210pF @ 15V
±20V
-
2.5W (Ta), 62W (Tc)
4.4 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP200N085T
IXYS

MOSFET N-CH 85V 200A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,848
MOSFET (Metal Oxide)
85V
200A (Tc)
10V
4V @ 250µA
152nC @ 10V
7600pF @ 25V
±20V
-
480W (Tc)
5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
NTMFS5C410NLTWFT3G
ON Semiconductor

MOSFET N-CH 40V 312A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고3,792
MOSFET (Metal Oxide)
40V
50A (Ta), 330A (Tc)
4.5V, 10V
2V @ 250µA
143nC @ 10V
8862pF @ 25V
±20V
-
3.8W (Ta), 167W (Tc)
0.9 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot XP151A12A2MR
Torex Semiconductor Ltd

MOSFET N-CH 20V 1A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,002,560
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4.5V
-
-
180pF @ 10V
±12V
-
500mW (Ta)
100 mOhm @ 500mA, 4.5V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot NTHD4P02FT1G
ON Semiconductor

MOSFET P-CH 20V 2.2A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Tj)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
패키지: 8-SMD, Flat Lead
재고3,878,916
MOSFET (Metal Oxide)
20V
2.2A (Tj)
2.5V, 4.5V
1.2V @ 250µA
6nC @ 4.5V
300pF @ 10V
±12V
Schottky Diode (Isolated)
1.1W (Tj)
155 mOhm @ 2.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
TSM2306CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,704
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4.5V, 10V
3V @ 250µA
5.5nC @ 4.5V
555pF @ 15V
±20V
-
1.25W (Ta)
57 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
CPC3909ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 400V SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
  • Operating Temperature: -40°C ~ 110°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고4,576
MOSFET (Metal Oxide)
400V
300mA (Ta)
0V
-
-
-
15V
Depletion Mode
2.5W (Ta)
9 Ohm @ 300mA, 0V
-40°C ~ 110°C (TA)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot AOT10N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,252
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4.5V @ 250µA
40nC @ 10V
1600pF @ 25V
±30V
-
250W (Tc)
750 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot SUD19P06-60-E3
Vishay Siliconix

MOSFET P-CH 60V 18.3A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고356,664
MOSFET (Metal Oxide)
60V
18.3A (Tc)
4.5V, 10V
3V @ 250µA
40nC @ 10V
1710pF @ 25V
±20V
-
2.3W (Ta), 38.5W (Tc)
60 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4858NT4G
ON Semiconductor

MOSFET N-CH 25V 11.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,757,084
MOSFET (Metal Oxide)
25V
11.2A (Ta), 73A (Tc)
4.5V, 10V
2.5V @ 250µA
19.2nC @ 4.5V
1563pF @ 12V
±20V
-
1.3W (Ta), 54.5W (Tc)
6.2 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRLMS5703TRPBF
Infineon Technologies

MOSFET P-CH 30V 2.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6
패키지: SOT-23-6
재고1,238,496
MOSFET (Metal Oxide)
30V
2.4A (Ta)
4.5V, 10V
1V @ 250µA
11nC @ 10V
170pF @ 25V
±20V
-
1.7W (Ta)
180 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro6?(TSOP-6)
SOT-23-6
DMN6140L-7
Diodes Incorporated

MOSFET N-CH 60V 1.6A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고295,998
MOSFET (Metal Oxide)
60V
1.6A (Ta)
4.5V, 10V
3V @ 250µA
8.6nC @ 10V
315pF @ 40V
±20V
-
700mW (Ta)
140 mOhm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot FDD6685
Fairchild/ON Semiconductor

MOSFET P-CH 30V 11A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고224,244
MOSFET (Metal Oxide)
30V
11A (Ta), 40A (Tc)
4.5V, 10V
3V @ 250µA
24nC @ 5V
1715pF @ 15V
±25V
-
52W (Ta)
20 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
SQ3419AEEV-T1_BE3
Vishay Siliconix

P-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고9,000
MOSFET (Metal Oxide)
40 V
6.9A (Tc)
4.5V, 10V
2.5V @ 250µA
12.5 nC @ 4.5 V
975 pF @ 20 V
±12V
-
5W (Tc)
61mOhm @ 2.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
PSMN1R5-40YSDX
Nexperia USA Inc.

MOSFET N-CH 40V 240A LFPAK56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 238W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: -
재고12,315
MOSFET (Metal Oxide)
40 V
240A (Ta)
10V
3.6V @ 1mA
99 nC @ 10 V
7752 pF @ 20 V
±20V
Schottky Diode (Body)
238W (Ta)
1.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TSM850N06CX
Taiwan Semiconductor Corporation

60V, 3A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
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MOSFET (Metal Oxide)
60 V
2.3A (Ta), 3A (Tc)
4.5V, 10V
2.5V @ 250µA
9.5 nC @ 10 V
529 pF @ 30 V
±20V
-
1W (Ta), 1.7W (Tc)
85mOhm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TSM060NB06CZ-C0G
Taiwan Semiconductor Corporation

60V, 111A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: -
재고11,910
MOSFET (Metal Oxide)
60 V
13A (Ta), 111A (Tc)
7V, 10V
4V @ 250µA
103 nC @ 10 V
6842 pF @ 30 V
±20V
-
2W (Ta), 156W (Tc)
6mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
BSC900N20NS3GATMA1
Infineon Technologies

MOSFET N-CH 200V 15.2A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-5
  • Package / Case: 8-PowerTDFN
패키지: -
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MOSFET (Metal Oxide)
200 V
15.2A (Tc)
10V
4V @ 30µA
11.6 nC @ 10 V
920 pF @ 100 V
±20V
-
62.5W (Tc)
90mOhm @ 7.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
DMTH43M8LFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
패키지: -
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MOSFET (Metal Oxide)
40 V
23A (Ta), 96A (Tc)
4.5V, 10V
2.5V @ 250µA
36.9 nC @ 10 V
2737 pF @ 20 V
±20V
-
3.6W (Ta), 65W (Tc)
4.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
XP2306GN
YAGEO XSEMI

MOSFET N-CH 20V 5.3A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고2,988
MOSFET (Metal Oxide)
20 V
5.3A (Ta)
2.5V, 10V
1.25V @ 250µA
8.7 nC @ 4.5 V
603 pF @ 15 V
±12V
-
1.38W (Ta)
30mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SIS698DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 6.9A PPAK1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 19.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
패키지: -
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MOSFET (Metal Oxide)
100 V
6.9A (Tc)
6V, 10V
3.5V @ 250µA
8 nC @ 10 V
210 pF @ 50 V
±20V
-
19.8W (Tc)
195mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
STWA20N95DK5
STMicroelectronics

MOSFET N-CH 950V 18A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
패키지: -
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MOSFET (Metal Oxide)
950 V
18A (Tc)
10V
5V @ 100µA
50.7 nC @ 10 V
1600 pF @ 100 V
±30V
-
250W (Tc)
330mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
XPW4R10ANB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A AEC-Q101

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerVDFN
패키지: -
재고47,964
MOSFET (Metal Oxide)
100 V
70A
6V, 10V
3.5V @ 1mA
75 nC @ 10 V
4970 pF @ 10 V
±20V
-
170W (Tc)
4.1mOhm @ 35A, 10V
-55°C ~ 175°C
Surface Mount
8-DSOP Advance
8-PowerVDFN
C3M0032120J1-TR
Wolfspeed, Inc.

SIC, MOSFET, 32M, 1200V, TO-263-

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
재고2,400
SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
3.6V @ 11.5mA
111 nC @ 15 V
3424 pF @ 1000 V
+15V, -4V
-
277W (Tc)
43mOhm @ 41.4A, 15V
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
2SJ616-TD-E
onsemi

2SJ616 - P CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVTFS024N06CTAG
onsemi

MOSFET N-CH 60V 7A/24A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
패키지: -
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MOSFET (Metal Oxide)
60 V
7A (Ta), 24A (Tc)
10V
4V @ 20µA
5.7 nC @ 10 V
333 pF @ 30 V
±20V
-
2.5W (Ta), 28W (Tc)
22.6mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
IRF840PBF-BE3
Vishay Siliconix

MOSFET N-CH 500V 8A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고10,107
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
4V @ 250µA
63 nC @ 10 V
1300 pF @ 25 V
±20V
-
125W (Tc)
850mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3