이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고5,680 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 70A TO251A
|
패키지: TO-251-3 Stub Leads, IPak |
재고7,616 |
|
MOSFET (Metal Oxide) | 30V | 45A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 60nC @ 10V | 2719pF @ 15V | ±20V | - | 7.5W (Ta), 60W (Tc) | 2.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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NXP |
MOSFET N-CH 100V 47A TO220AB
|
패키지: TO-220-3 |
재고2,336 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | - | 4V @ 1mA | 66nC @ 10V | 3100pF @ 25V | - | - | - | 28 mOhm @ 25A, 10V | - | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 60V 47A I2PAK
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고121,740 |
|
MOSFET (Metal Oxide) | 60V | 47A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | ±25V | - | 3.75W (Ta), 160W (Tc) | 26 mOhm @ 23.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 15A IPAK
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고398,568 |
|
MOSFET (Metal Oxide) | 55V | 15A (Tc) | 10V | 4V @ 250µA | 20nC @ 20V | 250pF @ 25V | ±20V | - | 45W (Tc) | 90 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,544 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 42 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 26A TO-268
|
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고15,576 |
|
MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 4.5V @ 4mA | 95nC @ 10V | 3900pF @ 25V | ±20V | - | 300W (Tc) | 200 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고232,116 |
|
MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 2.5W (Ta), 25W (Tc) | 200 mOhm @ 4.6A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 34A 8WDFN
|
패키지: 8-PowerWDFN |
재고5,424 |
|
MOSFET (Metal Oxide) | 30V | 6.6A (Ta), 34A(Tc) | 4.5V, 10V | 2.2V @ 250µA | 8.8nC @ 4.5V | 920pF @ 15V | ±20V | - | 810mW (Ta), 22.3W (Tc) | 11 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 30V 11A POWERFLAT
|
패키지: 8-PowerVDFN |
재고281,964 |
|
MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V, 10V | 1V @ 250µA (Min) | 17nC @ 4.5V | 1690pF @ 24V | ±20V | - | 2W (Ta), 50W (Tc) | 7.5 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고390,000 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | ±20V | - | 115W (Tc) | 5.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
PSMN2R0-25YLD/LFPAK/REEL 7 Q1
|
패키지: SC-100, SOT-669 |
재고7,504 |
|
MOSFET (Metal Oxide) | 25V | 100A | 4.5V, 10V | 2.2V @ 1mA | 34.1nC @ 10V | 2485pF @ 12V | ±20V | Schottky Diode (Body) | 115W (Tc) | 2.09 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 20V 4A 1206-8
|
패키지: 8-SMD, Flat Lead |
재고480,012 |
|
MOSFET (Metal Oxide) | 20V | 4A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 12nC @ 10V | 330pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.7W (Ta), 3.1W (Tc) | 84 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A MICRO8
|
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
재고20,268 |
|
MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 30nC @ 10V | 520pF @ 25V | ±20V | - | 1.8W (Ta) | 90 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 250V 3.1A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고7,520 |
|
MOSFET (Metal Oxide) | 250V | 3.1A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 2.1 Ohm @ 1.55A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 9.2A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고1,517,832 |
|
MOSFET (Metal Oxide) | 25V | 9.2A (Ta), 49A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.5nC @ 4.5V | 990pF @ 12V | ±20V | - | 1.27W (Ta), 36.6W (Tc) | 9.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 60V SGL 3-DFN1006B
|
패키지: 3-XFDFN |
재고97,938 |
|
MOSFET (Metal Oxide) | 60V | 350mA (Ta) | 5V, 10V | 2.1V @ 250µA | 1nC @ 10V | 23.6pF @ 10V | ±20V | - | 350mW (Ta), 3.1W (Tc) | 2.8 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006B (0.6x1) | 3-XFDFN |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247
|
패키지: TO-247-3 |
재고6,684 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1.1KV 13A TO-247AD
|
패키지: TO-247-3 |
재고9,432 |
|
MOSFET (Metal Oxide) | 1100V | 13A (Tc) | 10V | 4.5V @ 250µA | 195nC @ 10V | 5650pF @ 25V | ±20V | - | 360W (Tc) | 920 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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STMicroelectronics |
DISCRETE
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 4.75V @ 250µA | 52 nC @ 10 V | 2468 pF @ 100 V | ±25V | - | 357W (Tc) | 74mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 27A/60A PPAK SO8
|
패키지: - |
재고29,847 |
|
MOSFET (Metal Oxide) | 30 V | 27A (Ta), 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 32 nC @ 10 V | 1470 pF @ 15 V | +20V, -16V | - | 5W (Ta), 38W (Tc) | 4.3mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia USA Inc. |
PSMN5R5-100YSF/SOT669/LFPAK
|
패키지: - |
재고3,990 |
|
MOSFET (Metal Oxide) | 100 V | 115A (Ta) | 7V, 10V | 4V @ 1mA | 95 nC @ 10 V | 6238 pF @ 50 V | ±20V | - | 238W (Ta) | 5.5mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220-3
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 3.9V @ 240µA | 31 nC @ 10 V | 570 pF @ 100 V | ±20V | - | 63W (Tc) | 1.3Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 11.5A (Ta), 49.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.2 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 3.1W (Ta), 57.7W (Tc) | 13.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 85A (Tc) | 10V | 4V @ 250µA | 112 nC @ 10 V | 4120 pF @ 25 V | ±25V | - | 3.75W (Ta), 160W (Tc) | 10mOhm @ 42.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
PTNG 100V STD TOLL
|
패키지: - |
재고5,682 |
|
MOSFET (Metal Oxide) | 100 V | 35.5A (Ta), 300A (Tc) | 10V | 4V @ 799µA | 131 nC @ 10 V | 10100 pF @ 50 V | ±20V | - | 4.5W (Ta), 331W (Tc) | 1.5mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
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