이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 14A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고7,296 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 32nC @ 10V | 740pF @ 25V | ±20V | - | 56W (Tc) | 115 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V TO-252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고5,600 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고120,012 |
|
MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | - | 2.2V @ 250µA | 17.5nC @ 10V | 1314pF @ 15V | - | - | - | 8 mOhm @ 30A, 10V | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 6.5A TO-220
|
패키지: TO-220-3 |
재고128,460 |
|
MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 5V, 10V | 2V @ 250µA | 9nC @ 5V | 500pF @ 25V | ±20V | - | 63W (Tc) | 750 mOhm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB
|
패키지: TO-220-3 |
재고390,000 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 2V @ 250µA | 66nC @ 5V | 3300pF @ 25V | ±10V | - | 150W (Tc) | 28 mOhm @ 31A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP
|
패키지: 4-DIP (0.300", 7.62mm) |
재고12,804 |
|
MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 1.3W (Ta) | 200 mOhm @ 1A, 5V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH TO263-3
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,632 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 3.5V @ 1.1mA | 43nC @ 10V | 1520pF @ 100V | ±20V | - | 139W (Tc) | 199 mOhm @ 9.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 150V 130A TO-3P
|
패키지: TO-3P-3, SC-65-3 |
재고390,000 |
|
MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 4.5V @ 1mA | 113nC @ 10V | 9800pF @ 25V | ±30V | - | 750W (Tc) | 12 mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A 5DFN
|
패키지: 4-VSFN Exposed Pad |
재고270,000 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 240W (Tc) | 98 mOhm @ 15.4A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고50,340 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 49.4nC @ 10V | 4850pF @ 15V | ±20V | - | 930mW (Ta), 48W (Tc) | 3.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO-247
|
패키지: TO-247-3 |
재고67,404 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | - | 192W (Tc) | 165 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 60V PWRFLAT 8X8
|
패키지: - |
재고5,184 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 79A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고779,724 |
|
MOSFET (Metal Oxide) | 150V | 8A (Ta), 79A (Tc) | 6V, 10V | 4V @ 250µA | 107nC @ 10V | 5870pF @ 25V | ±20V | - | 310W (Tc) | 16 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 120A TO263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,336 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 270nC @ 10V | 14280pF @ 25V | ±20V | - | 375W (Tc) | 6.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V SOT-223-4
|
패키지: TO-261-4, TO-261AA |
재고4,992 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 5V, 10V | 2.8V @ 250µA | 3.77nC @ 10V | 225pF @ 50V | ±20V | - | 10.42W (Tc) | 160 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 2.3A SOT23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고57,672 |
|
MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 2V @ 11µA | 1.5nC @ 5V | 275pF @ 15V | ±20V | - | 500mW (Ta) | 57 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO220FP
|
패키지: TO-220-3 Full Pack |
재고533,304 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 3.9V @ 250µA | 41nC @ 10V | 785pF @ 100V | ±20V | - | 39W (Tc) | 900 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
1200V, 31A, 4-PIN THD, TRENCH-ST
|
패키지: - |
재고1,329 |
|
MOSFET (Metal Oxide) | 1200 V | 31A (Tc) | 18V | 5.6V @ 5mA | 60 nC @ 18 V | 785 pF @ 800 V | +22V, -4V | - | 165W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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International Rectifier |
MOSFET N-CH 55V 75A D2PAK
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 3V @ 250µA | 60 nC @ 5 V | 2880 pF @ 25 V | - | - | 130W (Tc) | 8mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
T6 60V N-CH LL IN LFPAK33
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 18A (Ta), 89A (Tc) | 4.5V, 10V | 2.2V @ 75µA | 25 nC @ 10 V | 1890 pF @ 25 V | ±20V | - | 3.2W (Ta), 76W (Tc) | 5.3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
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Goford Semiconductor |
P-60V,-40A,RD(MAX)<30M@-10V,VTH-
|
패키지: - |
재고14,892 |
|
MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 3V @ 250µA | 49 nC @ 10 V | 2705 pF @ 30 V | ±20V | - | 50W (Tc) | 30mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 4V @ 250µA | 18 nC @ 10 V | 610 pF @ 25 V | ±30V | - | 3.13W (Ta), 49W (Tc) | 2.6Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 30 V (D-S)
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 192A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 88 nC @ 10 V | 4590 pF @ 25 V | ±20V | - | 119W (Tc) | 1.8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW | PowerPAK® 1212-8SLW |
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NTE Electronics, Inc |
MOSFET-P CHANNEL AMP/SW
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 10A | 10V | 5V @ 10A | - | 5000 pF @ 10 V | ±30V | - | 800mW (Tc) | 600Ohm @ 0A, 10V | 175°C (TJ) | Through Hole | TO-72 | TO-72-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 150V 1.4A SOT26
|
패키지: - |
재고51,390 |
|
MOSFET (Metal Oxide) | 150 V | 1.4A (Tc) | 6V, 10V | 3.5V @ 250µA | 8 nC @ 10 V | 332 pF @ 10 V | ±20V | - | 2.1W (Tc) | 480mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Panjit International Inc. |
SOT-23, MOSFET
|
패키지: - |
재고186,210 |
|
MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 7.8 nC @ 10 V | 343 pF @ 15 V | ±20V | - | 1.25W (Ta) | 30mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Transphorm |
GANFET N-CH 650V 20A 3PQFN
|
패키지: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 2.6V @ 300µA | 42 nC @ 8 V | 760 pF @ 400 V | ±18V | - | 96W (Tc) | 130mOhm @ 14A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |