이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,448 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | ±20V | - | 375W (Tc) | 1.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 35A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고72,000 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 68W (Tc) | 31 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 4.7A 6-TSOP
|
패키지: SOT-23-6 Thin, TSOT-23-6 |
재고7,840 |
|
MOSFET (Metal Oxide) | 30V | 4.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 35nC @ 10V | - | ±20V | - | 1.14W (Ta) | 35 mOhm @ 6.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
ON Semiconductor |
MOSFET N-CH 620V 4.4A TO220FP
|
패키지: TO-220-3 Full Pack |
재고4,128 |
|
MOSFET (Metal Oxide) | 620V | 4.4A (Tc) | 10V | 4.5V @ 50µA | 19nC @ 10V | 535pF @ 25V | ±30V | - | 28W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 300V 24A ISOPLUS220
|
패키지: ISOPLUS220? |
재고5,808 |
|
MOSFET (Metal Oxide) | 300V | 24A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3490pF @ 25V | ±20V | - | 100W (Tc) | 75 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
STMicroelectronics |
MOSFET N-CH 25V 40A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고157,212 |
|
MOSFET (Metal Oxide) | 25V | 40A (Tc) | 5V, 10V | 1V @ 250µA | 6.3nC @ 5V | 700pF @ 20V | ±22V | - | 35W (Tc) | 11.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고2,464 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 250µA | 155nC @ 10V | 3850pF @ 25V | ±20V | - | 300W (Tc) | 8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 25V 29A MX
|
패키지: DirectFET? Isometric MX |
재고6,224 |
|
MOSFET (Metal Oxide) | 25V | 29A (Ta), 168A (Tc) | 4.5V, 10V | 2.1V @ 100µA | 38nC @ 4.5V | 3480pF @ 13V | ±16V | - | 2.1W (Ta), 69W (Tc) | 1.6 mOhm @ 29A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 30V 86A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고13,620 |
|
MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2330pF @ 15V | ±20V | - | 79W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고7,856 |
|
MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 4V @ 250µA | 128nC @ 10V | 8400pF @ 25V | ±20V | - | 3.9W (Ta), 200W (Tc) | 0.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고5,184 |
|
MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | ±30V | - | 45W (Tc) | 550 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Microsemi Corporation |
MOSFET N-CH 500V 38A SOT-227
|
패키지: SOT-227-4, miniBLOC |
재고6,272 |
|
MOSFET (Metal Oxide) | 500V | 38A | 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | ±30V | - | 355W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고23,400 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 3.7W (Ta), 60W (Tc) | 100 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Diodes Incorporated |
MOSFET N-CH 30V 7.62A DFN3030-8
|
패키지: 8-PowerUDFN |
재고35,736 |
|
MOSFET (Metal Oxide) | 30V | 7.62A (Ta) | 4.5V, 10V | 2V @ 250µA | 18.85nC @ 10V | 867pF @ 10V | ±20V | - | 990mW (Ta) | 15 mOhm @ 11.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN3030-8 | 8-PowerUDFN |
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IXYS |
MOSFET N-CH 500V 21A TO247
|
패키지: TO-247-3 |
재고7,296 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 5.5V @ 4mA | 77nC @ 10V | 2600pF @ 25V | ±20V | - | 300W (Tc) | 250 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO247
|
패키지: TO-247-3 |
재고11,244 |
|
MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | ±20V | - | 104W (Tc) | 280 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 7.1A TO-220FP
|
패키지: TO-220-3 Full Pack |
재고67,452 |
|
MOSFET (Metal Oxide) | 600V | 7.1A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1107pF @ 25V | ±30V | - | 35W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET N-CH 30V 8.9A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고527,916 |
|
MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 23.1nC @ 4.5V | 2480pF @ 15V | ±12V | - | 2W (Ta) | 25 mOhm @ 7.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 7.6A/24.7A PPAK
|
패키지: - |
재고2,265 |
|
MOSFET (Metal Oxide) | 100 V | 7.6A (Ta), 24.7A (Tc) | - | 2.5V @ 250µA | 29 nC @ 10 V | 1330 pF @ 50 V | ±20V | - | 3.6W (Ta), 39W (Tc) | 25.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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IXYS |
MOSFET N-CH 200V 72A TO220
|
패키지: - |
재고3 |
|
MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 4.5V @ 1.5mA | 55 nC @ 10 V | 3780 pF @ 25 V | ±20V | - | 36W (Tc) | 20mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V SO-8 T&R 2
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 13.6A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 47.5 nC @ 10 V | 2664 pF @ 30 V | ±20V | - | 1.4W (Ta) | 5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4A TO251
|
패키지: - |
재고67,248 |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 4.5V @ 250µA | 14.5 nC @ 10 V | 500 pF @ 25 V | ±30V | - | 50W (Tc) | 2.5Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPAK, TO-251AA |
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Harris Corporation |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 30A (Tc) | 10V | 4V @ 1mA | - | 3000 pF @ 25 V | ±20V | - | 150W (Tc) | 75mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-218 Isolated | TO-218-3 Isolated Tab, TO-218AC |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO220-3
|
패키지: - |
재고468 |
|
MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 3.9V @ 1mA | 177 nC @ 10 V | 2320 pF @ 25 V | ±20V | - | 208W (Tc) | 290mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Texas Instruments |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET N-CH 60V 43.3A PWRDI3333
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 43.3A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22.2 nC @ 10 V | 1522 pF @ 30 V | ±20V | - | 1.95W (Ta), 33.78W (Tc) | 12mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 6A/27A 8PDFNU
|
패키지: - |
재고14,997 |
|
MOSFET (Metal Oxide) | 60 V | 6A (Ta), 27A (Tc) | 7V, 10V | 3.8V @ 250µA | 20 nC @ 10 V | 1009 pF @ 30 V | ±20V | - | 3.1W (Ta), 56W (Tc) | 30mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PDFNU (5x6) | 8-PowerTDFN |