이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 200V 16A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고4,048 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | ±30V | - | 3.8W (Ta), 140W (Tc) | 170 mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고272,484 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 25µA | 11nC @ 5V | 700pF @ 25V | ±20V | - | 60W (Tc) | 20 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
|
패키지: TO-261-4, TO-261AA |
재고3,744 |
|
MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | ±20V | - | 1.8W (Ta) | 45 Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,904 |
|
MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 74nC @ 5V | 6000pF @ 10V | ±12V | - | 2.5W (Ta) | 20 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 61A TO-220AB
|
패키지: TO-220-3 |
재고391,020 |
|
MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 2.6A SOT23-3
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고6,896 |
|
MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 9nC @ 10V | 370pF @ 15V | ±20V | - | 1.4W (Ta) | 130 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 12V 17A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고187,248 |
|
MOSFET (Metal Oxide) | 12V | 17A (Ta) | 1.8V, 4.5V | 400mV @ 250µA (Min) | 75nC @ 4.5V | - | ±8V | - | 1.6W (Ta) | 3 mOhm @ 25A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 60V 0.28A TO92-3
|
패키지: E-Line-3 |
재고3,168 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 700mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Panasonic Electronic Components |
MOSFET N-CH 50V 100MA SMINI-3
|
패키지: SC-70, SOT-323 |
재고2,704 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 5V | 3.5V @ 100µA | - | 15pF @ 5V | 8V | - | 150mW (Ta) | 50 Ohm @ 20mA, 5V | 150°C (TJ) | Surface Mount | SMini3-G1 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC
|
패키지: TO-247-3 |
재고5,216 |
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MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 124nC @ 10V | 3540pF @ 25V | ±30V | - | 280W (Tc) | 240 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고9,936 |
|
MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 68nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 125W (Tc) | 280 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-7
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패키지: TO-263-7, D2Pak (6 Leads + Tab) |
재고5,952 |
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MOSFET (Metal Oxide) | 80V | 140A (Tc) | 10V | 4V @ 100µA | 80nC @ 10V | 5500pF @ 25V | ±20V | - | 161W (Tc) | 4.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab) |
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Microsemi Corporation |
MOSFET N-CH 600V 60A TO-247
|
패키지: TO-247-3 Variant |
재고7,744 |
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MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 110 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.2A UMT3F
|
패키지: SC-85 |
재고120,012 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | 115pF @ 10V | ±10V | - | 150mW (Ta) | 1.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 120A I2PAK
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패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고18,444 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 1mA | 118nC @ 10V | 9700pF @ 25V | ±20V | - | 324W (Tc) | 1.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 55V 55A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고224,922 |
|
MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 2V @ 1mA | 48nC @ 5V | 2916pF @ 25V | ±15V | - | 115W (Tc) | 13.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고42,660 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Goford Semiconductor |
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
|
패키지: - |
재고18,432 |
|
MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 46 nC @ 10 V | 1600 pF @ 30 V | ±20V | - | 2.1W (Tc) | 22mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A D2PAK
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO263
|
패키지: - |
재고3,000 |
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MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 4V @ 250µA | 86 nC @ 10 V | 1980 pF @ 100 V | ±30V | - | 250W (Tc) | 145mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 800V 5.4A DPAK
|
패키지: - |
재고6,186 |
|
MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 827 pF @ 100 V | ±30V | - | 78W (Tc) | 940mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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MOSLEADER |
P -30V -2.8A SOT-23N
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
패키지: - |
재고8,940 |
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MOSFET (Metal Oxide) | 40 V | 12A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 10 V | 1258 pF @ 25 V | ±20V | - | 2W (Ta), 70W (Tc) | 9.5mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
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Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
MOSFET N-CH 650V 76A TO247-4
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 5V @ 7.6mA | 298 nC @ 10 V | 12560 pF @ 100 V | ±20V | - | 595W (Tc) | 41mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Vishay Siliconix |
MOSFET N-CH 80V 10.2A/25.5A PPAK
|
패키지: - |
재고35,967 |
|
MOSFET (Metal Oxide) | 80 V | 10.2A (Ta), 25.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1250 pF @ 40 V | ±20V | - | 3.6W (Ta), 22.3W (Tc) | 15.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Cambridge GaN Devices |
650V GAN HEMT, 200MOHM, DFN5X6.
|
패키지: - |
재고13,071 |
|
GaNFET (Gallium Nitride) | 650 V | 8.5A (Tc) | 9V, 20V | 4.2V @ 2.75mA | 1.4 nC @ 12 V | - | +20V, -1V | Current Sensing | - | 280mOhm @ 600mA, 12V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
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onsemi |
MOSFET N-CH 60V 9A DPAK
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 10V | 4V @ 250µA | 15 nC @ 10 V | 280 pF @ 25 V | ±20V | - | 28.8W (Ta) | 150mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |