페이지 438 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 887
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  438/1,502
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSB019N03LX G
Infineon Technologies

MOSFET N-CH 30V 174A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M?
  • Package / Case: 3-WDSON
패키지: 3-WDSON
재고3,472
MOSFET (Metal Oxide)
30V
32A (Ta), 174A (Tc)
4.5V, 10V
2.2V @ 250µA
92nC @ 10V
8400pF @ 15V
±20V
-
2.8W (Ta), 89W (Tc)
1.9 mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M?
3-WDSON
PMPB40SNA,115
Nexperia USA Inc.

MOSFET N-CH 60V 12.9A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 612pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
패키지: 6-UDFN Exposed Pad
재고5,808
MOSFET (Metal Oxide)
60V
12.9A (Tc)
4.5V, 10V
3V @ 250µA
24nC @ 10V
612pF @ 30V
±20V
-
1.7W (Ta), 12.5W (Tc)
43 mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
FQD2P40TF_F080
Fairchild/ON Semiconductor

MOSFET P-CH 400V 1.56A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 780mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,368
MOSFET (Metal Oxide)
400V
1.56A (Tc)
10V
5V @ 250µA
13nC @ 10V
350pF @ 25V
±30V
-
2.5W (Ta), 38W (Tc)
6.5 Ohm @ 780mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQA28N15_F109
Fairchild/ON Semiconductor

MOSFET N-CH 150V 33A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고7,328
MOSFET (Metal Oxide)
150V
33A (Tc)
10V
4V @ 250µA
52nC @ 10V
1600pF @ 25V
±25V
-
227W (Tc)
90 mOhm @ 16.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot IXTP90N055T
IXYS

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고24,000
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 50µA
61nC @ 10V
2500pF @ 25V
±20V
-
176W (Tc)
8.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
ZVN4306ASTOA
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3
패키지: E-Line-3
재고2,032
MOSFET (Metal Oxide)
60V
1.1A (Ta)
5V, 10V
3V @ 1mA
-
350pF @ 25V
±20V
-
850mW (Ta)
330 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
E-Line (TO-92 compatible)
E-Line-3
hot IRF720
Vishay Siliconix

MOSFET N-CH 400V 3.3A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고392,388
MOSFET (Metal Oxide)
400V
3.3A (Tc)
10V
4V @ 250µA
20nC @ 10V
410pF @ 25V
±20V
-
50W (Tc)
1.8 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPW65R125C7XKSA1
Infineon Technologies

MOSFET N-CH 650V TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 101W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 8.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,664
MOSFET (Metal Oxide)
650V
18A (Tc)
10V
4V @ 440µA
35nC @ 10V
1670pF @ 400V
±20V
-
101W (Tc)
125 mOhm @ 8.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
AOWF20S60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO262F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,072
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4.1V @ 250µA
19.8nC @ 10V
1038pF @ 100V
±30V
-
28W (Tc)
199 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
-
TO-262-3 Long Leads, I2Pak, TO-262AA
hot AOD2910
Alpha & Omega Semiconductor Inc.

MOSFET N CH 100V 6.5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고213,600
MOSFET (Metal Oxide)
100V
6.5A (Ta), 31A (Tc)
4.5V, 10V
2.7V @ 250µA
25nC @ 10V
1190pF @ 15V
±20V
-
2.5W (Ta), 53.5W (Tc)
24 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
STP7N105K5
STMicroelectronics

MOSFET N-CH 1050V 4A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고3,488
MOSFET (Metal Oxide)
1050V
4A (Tc)
10V
5V @ 100µA
17nC @ 10V
380pF @ 100V
±30V
-
110W (Tc)
2 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
DMT8012LFG-7
Diodes Incorporated

MOSFET N-CH 80V 9.5A PWDI3333-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1949pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고4,432
MOSFET (Metal Oxide)
80V
9.5A (Ta), 35A (Tc)
6V, 10V
3V @ 250µA
34nC @ 10V
1949pF @ 40V
±20V
-
2.2W (Ta), 30W (Tc)
16 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerWDFN
DMN2230U-7
Diodes Incorporated

MOSFET N-CH 20V 2A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고26,406
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
1V @ 250µA
-
188pF @ 10V
±12V
-
600mW (Ta)
110 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
FDN336P-NL-ML
MOSLEADER

P-Channel -20V -1.3A SOT-23-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP3045LFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 19.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5.7A (Ta), 19.9A (Tc)
4.5V, 10V
2.1V @ 250µA
13.6 nC @ 10 V
782 pF @ 15 V
±20V
-
900mW (Ta)
42mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
IRLHS6242TR2PBF
Infineon Technologies

MOSFET N-CH 20V 10A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
10A (Ta), 12A (Tc)
-
1.1V @ 10µA
14 nC @ 4.5 V
1110 pF @ 10 V
-
-
-
11.7mOhm @ 8.5A, 4.5V
-
Surface Mount
6-PQFN (2x2)
6-PowerVDFN
PJD4NA65_R2_00001
Panjit International Inc.

650V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
4A (Ta)
10V
4V @ 250µA
11.4 nC @ 10 V
463 pF @ 25 V
±30V
-
-
2.7Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN61D9UT-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
350mA (Ta)
1.8V, 5V
1V @ 250µA
0.4 nC @ 4.5 V
28.5 pF @ 30 V
±20V
-
260mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
CEZ6R40SL-HF
Comchip Technology

MOSFET N-CH 65V 27A/93A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 65 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: P-PAK (5x6)
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
65 V
27A (Ta), 93A (Tc)
4.5V, 10V
3V @ 250µA
26 nC @ 4.5 V
1790 pF @ 30 V
±20V
-
73W (Tc)
4.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
P-PAK (5x6)
8-PowerTDFN
SCT012H90G3AG
STMicroelectronics

H2PAK-7

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V
  • Vgs (Max): +18V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
900 V
110A (Tc)
15V, 18V
4.2V @ 10mA
138 nC @ 18 V
3880 pF @ 600 V
+18V, -5V
-
625W (Tc)
15.8mOhm @ 60A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTMYS7D3N04CLTWG
onsemi

MOSFET N-CH 40V 17A/52A 4LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK4 (5x6)
  • Package / Case: SOT-1023, 4-LFPAK
패키지: -
재고8,259
MOSFET (Metal Oxide)
40 V
17A (Ta), 52A (Tc)
4.5V, 10V
2V @ 30µA
16 nC @ 10 V
860 pF @ 25 V
±20V
-
3.8W (Ta), 38W (Tc)
7.3mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
CMPDM7002AG-TR-PBFREE
Central Semiconductor Corp

MOSFET N-CH 60V 280MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): 40V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고314,190
MOSFET (Metal Oxide)
60 V
280mA (Ta)
5V, 10V
2.5V @ 250µA
-
50 pF @ 25 V
40V
-
350mW (Ta)
2Ohm @ 500mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PJQ4437EP-AU_R2_002A1
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333-8
  • Package / Case: 8-PowerVDFN
패키지: -
재고14,940
MOSFET (Metal Oxide)
30 V
10A (Ta), 41A (Tc)
4.5V, 10V
2.5V @ 250µA
32 nC @ 10 V
1270 pF @ 25 V
±25V
-
2.5W (Ta), 41W (Tc)
15.4mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN3333-8
8-PowerVDFN
TK2R9E10PL-S1X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: -
재고141
MOSFET (Metal Oxide)
100 V
100A (Ta)
4.5V, 10V
2.5V @ 1mA
161 nC @ 10 V
9500 pF @ 50 V
±20V
-
306W (Tc)
2.9mOhm @ 50A, 10V
175°C
Through Hole
TO-220
TO-220-3
DMN2451UFDQ-13
Diodes Incorporated

MOSFET N-CH 20V 900MA 3DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN1212-3 (Type C)
  • Package / Case: 3-PowerUDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
1.1A (Ta)
1.5V, 4.5V
1V @ 250µA
0.7 nC @ 4.5 V
52 pF @ 16 V
±12V
-
500mW (Ta)
200mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN1212-3 (Type C)
3-PowerUDFN
BSC096N10LS5ATMA1
Infineon Technologies

MOSFET N-CH 100V 40A TDSON-8-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
패키지: -
재고25,755
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
2.3V @ 36µA
14.6 nC @ 4.5 V
2100 pF @ 50 V
±20V
-
3W (Ta), 83W (Tc)
9.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
QM3010K-ML
MOSLEADER

Single N 30V 3.5A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK2090-T2-A
Renesas Electronics Corporation

MOSFET N-CH 50V 100MA SC70-3 SSP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 3 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
  • Package / Case: SC-70, SOT-323
패키지: -
Request a Quote
MOSFET (Metal Oxide)
50 V
100mA (Ta)
-
1.5V @ 1µA
-
6000 pF @ 3 V
-
-
-
20Ohm @ 10mA, 4V
-
Surface Mount
SC-70-3, SSP, Miniature Mini Mold
SC-70, SOT-323