페이지 447 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  447/1,502
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설명
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재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRLR8729PBF
Infineon Technologies

MOSFET N-CH 30V 58A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,864
MOSFET (Metal Oxide)
30V
58A (Tc)
4.5V, 10V
2.35V @ 25µA
16nC @ 4.5V
1350pF @ 15V
±20V
-
55W (Tc)
8.9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
BTS113AE3064NKSA1
Infineon Technologies

MOSFET N-CH 60V 11.5A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고4,032
MOSFET (Metal Oxide)
60V
11.5A (Tc)
4.5V
2.5V @ 1mA
-
560pF @ 25V
±10V
-
40W (Tc)
170 mOhm @ 5.8A, 4.5V
-55°C ~ 150°C (TJ)
Through Hole
P-TO220AB
TO-220-3
hot AOD4120L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고22,800
MOSFET (Metal Oxide)
20V
25A (Tc)
2.5V, 10V
2V @ 250µA
18nC @ 10V
900pF @ 10V
±16V
-
2.5W (Ta), 33W (Tc)
18 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
GP2M020A050H
Global Power Technologies Group

MOSFET N-CH 500V 18A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,648
MOSFET (Metal Oxide)
500V
18A (Tc)
10V
5V @ 250µA
44nC @ 10V
2880pF @ 25V
±30V
-
290W (Tc)
300 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
PSMN010-25YLC,115
NXP

MOSFET N-CH 25V 39A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 678pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고7,328
MOSFET (Metal Oxide)
25V
39A (Tc)
4.5V, 10V
1.95V @ 1mA
11nC @ 10V
678pF @ 12V
±20V
-
30W (Tc)
10.6 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
2SK2916(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 14A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)IS
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고3,392
MOSFET (Metal Oxide)
500V
14A (Ta)
10V
4V @ 1mA
58nC @ 10V
2600pF @ 10V
±30V
-
80W (Tc)
400 mOhm @ 7A, 10V
150°C (TJ)
Through Hole
TO-3P(N)IS
TO-3P-3, SC-65-3
hot IRFPS40N50L
Vishay Siliconix

MOSFET N-CH 500V 46A SUPER247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-247 (TO-274AA)
  • Package / Case: TO-274AA
패키지: TO-274AA
재고43,884
MOSFET (Metal Oxide)
500V
46A (Tc)
10V
5V @ 250µA
380nC @ 10V
8110pF @ 25V
±30V
-
540W (Tc)
100 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247 (TO-274AA)
TO-274AA
IRFR010TRR
Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,312
MOSFET (Metal Oxide)
50V
8.2A (Tc)
10V
4V @ 250µA
10nC @ 10V
250pF @ 25V
±20V
-
25W (Tc)
200 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5862NT4G-VF01
ON Semiconductor

MOSFET N-CH 60V 90A DPAK-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 48A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,568
MOSFET (Metal Oxide)
60V
18A (Ta), 98A (Tc)
10V
4V @ 250µA
82nC @ 10V
6000pF @ 25V
±20V
-
4.1W (Ta), 115W (Tc)
5.7 mOhm @ 48A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTGS3441T1G
ON Semiconductor

MOSFET P-CH 20V 1.65A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
패키지: SOT-23-6
재고4,371,276
MOSFET (Metal Oxide)
20V
1.65A (Ta)
2.5V, 4.5V
1.5V @ 250µA
14nC @ 4.5V
480pF @ 5V
±8V
-
500mW (Ta)
90 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
IPW60R190P6
Infineon Technologies

MOSFET N-CH 600V 20.2A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 630µ
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고8,352
MOSFET (Metal Oxide)
600V
20.2A (Tc)
10V
4.5V @ 630µ
11nC @ 10V
1750pF @ 100V
±20V
-
151W (Tc)
190 mOhm @ 7.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
CSD18537NKCS
Texas Instruments

MOSFET N-CH 60V 50A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,368
MOSFET (Metal Oxide)
60V
50A (Tc)
6V, 10V
3.5V @ 250µA
18nC @ 10V
1480pF @ 30V
±20V
-
94W (Tc)
14 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDMC7660DC
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A POWER33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5170pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool ? 33
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고7,392
MOSFET (Metal Oxide)
30V
30A (Ta), 40A (Tc)
4.5V, 10V
2.5V @ 250µA
76nC @ 10V
5170pF @ 15V
±20V
-
3W (Ta), 78W (Tc)
2.2 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool ? 33
8-PowerTDFN
hot IRFB9N65APBF
Vishay Siliconix

MOSFET N-CH 650V 8.5A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 930 mOhm @ 5.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고5,328
MOSFET (Metal Oxide)
650V
8.5A (Tc)
10V
4V @ 250µA
48nC @ 10V
1417pF @ 25V
±30V
-
167W (Tc)
930 mOhm @ 5.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STP15NK50ZFP
STMicroelectronics

MOSFET N-CH 500V 14A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고583,248
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4.5V @ 100µA
106nC @ 10V
2260pF @ 25V
±30V
-
40W (Tc)
340 mOhm @ 7A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot AO3423
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 2A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 92 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3L
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고5,188,380
MOSFET (Metal Oxide)
20V
2A (Ta)
2.5V, 10V
1.4V @ 250µA
6.6nC @ 4.5V
620pF @ 10V
±12V
-
1.4W (Ta)
92 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
STY105NM50N
STMicroelectronics

MOSFET N-CH 500V 110A MAX247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 52A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: MAX247?
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,752
MOSFET (Metal Oxide)
500V
110A (Tc)
10V
4V @ 250µA
326nC @ 10V
9600pF @ 100V
±25V
-
625W (Tc)
22 mOhm @ 52A, 10V
-55°C ~ 150°C (TJ)
Through Hole
MAX247?
TO-247-3
hot STL57N65M5
STMicroelectronics

MOSFET N-CH 650V 4.3A 8POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFLAT? (8x8)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고6,960
MOSFET (Metal Oxide)
650V
4.3A (Ta), 22.5A (Tc)
10V
5V @ 250µA
110nC @ 10V
4200pF @ 100V
±25V
-
2.8W (Ta), 189W (Tc)
69 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFLAT? (8x8)
8-PowerVDFN
XP9561GH
YAGEO XSEMI

MOSFET P-CH 40V 45A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고3,000
MOSFET (Metal Oxide)
40 V
45A (Tc)
4.5V, 10V
3V @ 250µA
40 nC @ 4.5 V
2720 pF @ 25 V
±20V
-
54.3W (Tc)
16mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
MCB220N15Y-TP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9177 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 312.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
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MOSFET (Metal Oxide)
150 V
220A (Tc)
6V, 10V
4V @ 250µA
155 nC @ 10 V
9177 pF @ 75 V
±20V
-
312.5W (Tj)
6.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDD8444L-F085
onsemi

MOSFET N-CH 40V 16A/50A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 153W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
16A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
60 nC @ 5 V
5530 pF @ 25 V
±20V
-
153W (Tc)
5.2mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH42M4SPS-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.06W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
200A (Tc)
10V
4V @ 250µA
79.5 nC @ 10 V
6968 pF @ 20 V
±20V
-
3.06W (Ta), 150W (Tc)
2.4mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
PJW4N06A_R2_00001
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: -
재고17,820
MOSFET (Metal Oxide)
60 V
4A (Ta)
4.5V, 10V
2.5V @ 250µA
5.1 nC @ 4.5 V
509 pF @ 15 V
±20V
-
3.1W (Ta)
100mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TSM680P06CP
Taiwan Semiconductor Corporation

-60V, -18A, SINGLE P-CHANNEL POW

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
18A (Tc)
4.5V, 10V
2.2V @ 250µA
16.4 nC @ 10 V
870 pF @ 30 V
±20V
-
20W (Tc)
68mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTK3N250L
IXYS

MOSFET N-CH 2500V 3A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2500 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
2500 V
3A (Tc)
10V
5V @ 1mA
230 nC @ 10 V
5400 pF @ 25 V
±20V
-
417W (Tc)
10Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
AONS66920
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 17.5A/48A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: -
재고380,505
MOSFET (Metal Oxide)
100 V
17.5A (Ta), 48A (Tc)
4.5V, 10V
2.5V @ 250µA
50 nC @ 10 V
2500 pF @ 50 V
±20V
-
5W (Ta), 56.5W (Tc)
8.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
IXFA3N120-TRR
IXYS

MOSFET N-CH 1200V 3A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
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MOSFET (Metal Oxide)
1200 V
3A (Tc)
10V
5V @ 1.5mA
39 nC @ 10 V
1050 pF @ 25 V
±20V
-
200W (Tc)
4.5Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB016N08NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 267µA
  • Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고2,880
MOSFET (Metal Oxide)
80 V
170A (Tc)
6V, 10V
3.8V @ 267µA
255 nC @ 10 V
12000 pF @ 40 V
±20V
-
300W (Tc)
1.65mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB