이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,432 |
|
MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | ±16V | - | 3.1W (Ta), 89W (Tc) | 14 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Global Power Technologies Group |
MOSFET N-CH 500V 13A TO220
|
패키지: TO-220-3 |
재고7,264 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1918pF @ 25V | ±30V | - | 183W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 12V 3.6A 2X2 4-MFP
|
패키지: 4-XFBGA, CSPBGA |
재고60,000 |
|
MOSFET (Metal Oxide) | 12V | 3.6A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 21nC @ 4.5V | - | ±8V | - | 1.47W (Ta) | 55 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 5.2A TO-3PF
|
패키지: SC-94 |
재고6,592 |
|
MOSFET (Metal Oxide) | 900V | 5.2A (Tc) | 10V | 5V @ 250µA | 59nC @ 10V | 2280pF @ 25V | ±30V | - | 107W (Tc) | 1.55 Ohm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Vishay Siliconix |
MOSFET N-CH 100V 15A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고155,412 |
|
MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 2V @ 250µA | 28nC @ 5V | 930pF @ 25V | ±10V | - | 3.7W (Ta), 88W (Tc) | 160 mOhm @ 9A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 40V 15A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고496,836 |
|
MOSFET (Metal Oxide) | 40V | 15A (Tc) | 4.5V, 10V | 1V @ 250µA | 28nC @ 4.5V | 2530pF @ 25V | ±16V | - | 2.7W (Tc) | 5 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 500V 40A TO-268
|
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고3,024 |
|
MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 4.5V @ 4mA | 130nC @ 10V | 3800pF @ 25V | ±30V | - | 500W (Tc) | 140 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
EPC |
TRANS GAN 65V 2A BUMPED DIE
|
패키지: Die |
재고3,120 |
|
GaNFET (Gallium Nitride) | 65V | 2A (Ta) | 5V | 2.5V @ 250µA | 0.14nC @ 5V | 21pF @ 32.5V | +6V, -5V | - | - | 530 mOhm @ 500mA, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 3A TO220F
|
패키지: TO-220-3 Full Pack |
재고7,184 |
|
MOSFET (Metal Oxide) | 150V | 3A (Ta), 13A (Tc) | 7V, 10V | 4.6V @ 250µA | 20nC @ 10V | 985pF @ 75V | ±20V | - | 2.1W (Ta), 41W (Tc) | 94 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 400V 2.6A TO252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고208,104 |
|
MOSFET (Metal Oxide) | 400V | 2.6A (Tc) | 10V | 4.5V @ 250µA | 5.1nC @ 10V | 225pF @ 25V | ±30V | - | 50W (Tc) | 3.1 Ohm @ 1A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
POWER MOSFET
|
패키지: - |
재고2,304 |
|
MOSFET (Metal Oxide) | 600V | 68A (Tc) | 10V | 4V @ 250µA | 118nC @ 10V | 5200pF @ 100V | ±25V | - | 450W (Tc) | 40 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 60V 40A 1212
|
패키지: PowerPAK? 1212-8 |
재고5,040 |
|
MOSFET (Metal Oxide) | 60V | 40A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 32nC @ 10V | 1320pF @ 30V | ±20V | - | 3.7W (Ta), 52W (Tc) | 8.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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IXYS |
MOSFET N-CH 1000V 23A ISOPLUS247
|
패키지: TO-247-3 |
재고6,688 |
|
MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 6.5V @ 8mA | 195nC @ 10V | 9940pF @ 25V | ±30V | - | 570W (Tc) | 350 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
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ON Semiconductor |
MOSFET P-CH 20V 10A SOT223
|
패키지: TO-261-4, TO-261AA |
재고573,996 |
|
MOSFET (Metal Oxide) | 20V | 10A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 20nC @ 4.5V | 1200pF @ 16V | ±8V | - | 8.3W (Ta) | 50 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 60V 195A
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고18,180 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | ±20V | - | 375W (Tc) | 1.95 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK-3
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고33,636 |
|
MOSFET (Metal Oxide) | 200V | 7.6A (Tc) | 5V, 10V | 2.5V @ 250µA | 16nC @ 10V | 585pF @ 25V | ±20V | - | 83W (Tc) | 360 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 195A TO262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고15,426 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | - | 380W (Tc) | 2.4 mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 9A MICROFET
|
패키지: 6-VDFN Exposed Pad |
재고15,288 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 10A (Tc) | 4.5V, 10V | 3V @ 250µA | 12nC @ 10V | 720pF @ 15V | ±20V | - | 2.4W (Ta) | 16 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고642,672 |
|
MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고62,388 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 5V, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | ±20V | - | 2.5W (Ta), 40W (Tc) | 180 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET P-CH 200V 26A TO-263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고14,856 |
|
MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2740pF @ 25V | ±20V | - | 300W (Tc) | 170 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 60A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고84,492 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 1810pF @ 25V | ±20V | - | 110W (Tc) | 16 mOhm @ 30A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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MOSLEADER |
20V 2.1A 0.35W N Channel SOT-23
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 10V | 4V @ 250µA | 7.7 nC @ 10 V | 215 pF @ 25 V | ±30V | - | 34W (Tc) | 12Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Texas Instruments |
MOSFET P-CH 20V 3.6A 3LGA
|
패키지: - |
재고24,282 |
|
MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 1.8V, 4.5V | 1.05V @ 250µA | 1.33 nC @ 4.5 V | 385 pF @ 10 V | -20V | - | 500mW (Ta) | 76mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-LGA (0.73x0.64) | 3-XFLGA |
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Diodes Incorporated |
MOSFET P-CH 30V 2.5A SOT23
|
패키지: - |
재고1,628,139 |
|
MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 3.1 nC @ 4.5 V | 254 pF @ 25 V | ±20V | - | 650mW (Ta) | 95mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 120V 56A TO220-3
|
패키지: - |
재고53,151 |
|
MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 4V @ 61µA | 49 nC @ 10 V | 3220 pF @ 60 V | ±20V | - | 107W (Tc) | 14.7mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 45V 1.6A TUMT3
|
패키지: - |
재고36,567 |
|
MOSFET (Metal Oxide) | 45 V | 1.6A (Ta) | - | 1.5V @ 1mA | 2.3 nC @ 4.5 V | 150 pF @ 10 V | ±12V | - | 800mW | 190mOhm @ 1.6A, 4.5V | 150°C | Surface Mount | TUMT3 | 3-SMD, Flat Leads |