페이지 549 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  549/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
GP2M004A060HG
Global Power Technologies Group

MOSFET N-CH 600V 4A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 86.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고5,888
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
5V @ 250µA
12nC @ 10V
545pF @ 25V
±30V
-
86.2W (Tc)
2.5 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
AUIRF5210STRL
Infineon Technologies

MOSFET P-CH 100V 38A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,320
MOSFET (Metal Oxide)
100V
38A (Tc)
10V
4V @ 250µA
230nC @ 10V
2780pF @ 25V
±20V
-
3.1W (Ta), 170W (Tc)
60 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF7470PBF
Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,904
MOSFET (Metal Oxide)
40V
10A (Ta)
2.8V, 10V
2V @ 250µA
44nC @ 4.5V
3430pF @ 20V
±12V
-
2.5W (Ta)
13 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRFR4105ZPBF
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,552
MOSFET (Metal Oxide)
55V
30A (Tc)
10V
4V @ 250µA
27nC @ 10V
740pF @ 25V
±20V
-
48W (Tc)
24.5 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
BSC084P03NS3EGATMA1
Infineon Technologies

MOSFET P-CH 30V 14.9A TDSON-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 57.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고2,336
MOSFET (Metal Oxide)
30V
14.9A (Ta), 78.6A (Tc)
6V, 10V
3V @ 110µA
57.7nC @ 10V
4240pF @ 15V
±25V
-
2.5W (Ta), 69W (Tc)
8.4 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
hot IXFH170N10P
IXYS

MOSFET N-CH 100V 170A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 715W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고432,324
MOSFET (Metal Oxide)
100V
170A (Tc)
10V
5V @ 4mA
198nC @ 10V
6000pF @ 25V
±20V
-
715W (Tc)
9 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
GA05JT12-247
GeneSiC Semiconductor

TRANS SJT 1200V 5A

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AB
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,432
SiC (Silicon Carbide Junction Transistor)
1200V
5A (Tc)
-
-
-
-
-
-
106W (Tc)
280 mOhm @ 5A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
FCMT099N65S3
Fairchild/ON Semiconductor

PQFN88 PKG, 99MOHM, 650V, SUPERF

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,280
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AOTF10T60PL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고3,104
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
5V @ 250µA
40nC @ 10V
1595pF @ 100V
±30V
-
33W (Tc)
700 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot AON6758
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 32A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 4.1W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: 8-PowerSMD, Flat Leads
재고1,052,868
MOSFET (Metal Oxide)
30V
27A (Ta), 32A (Tc)
4.5V, 10V
2.4V @ 250µA
40nC @ 10V
1975pF @ 15V
±20V
Schottky Diode (Body)
4.1W (Ta), 41W (Tc)
3.6 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
IXFP20N50P3
IXYS

MOSFET N-CH 500V 8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,096
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
5V @ 1.5mA
36nC @ 10V
1800pF @ 25V
±30V
-
380W (Tc)
300 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TK8A60W5,S5VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고6,084
MOSFET (Metal Oxide)
600V
8A (Ta)
10V
4.5V @ 400µA
22nC @ 10V
590pF @ 300V
±30V
-
30W (Tc)
540 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack, Isolated Tab
IPT60R102G7XTMA1
Infineon Technologies

MOSFET N-CH 650V 23A HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 141W (Tc)
  • Rds On (Max) @ Id, Vgs: 102 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고7,584
MOSFET (Metal Oxide)
650V
23A (Tc)
10V
4V @ 390µA
34nC @ 10V
1320pF @ 400V
±20V
-
141W (Tc)
102 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
hot IRFP340PBF
Vishay Siliconix

MOSFET N-CH 400V 11A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고18,036
MOSFET (Metal Oxide)
400V
11A (Tc)
10V
4V @ 250µA
62nC @ 10V
1400pF @ 25V
±20V
-
150W (Tc)
550 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
BSS84PWH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 150MA SOT-323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19.1pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT323-3
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고216,012
MOSFET (Metal Oxide)
60V
150mA (Ta)
4.5V, 10V
2V @ 20µA
1.5nC @ 10V
19.1pF @ 25V
±20V
-
300mW (Ta)
8 Ohm @ 150mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT323-3
SC-70, SOT-323
IRF8301MTRPBF
Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET MT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 192A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 32A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MT
  • Package / Case: DirectFET? Isometric MT
패키지: DirectFET? Isometric MT
재고33,324
MOSFET (Metal Oxide)
30V
34A (Ta), 192A (Tc)
4.5V, 10V
2.35V @ 150µA
77nC @ 4.5V
6140pF @ 15V
±20V
-
2.8W (Ta), 89W (Tc)
1.5 mOhm @ 32A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MT
DirectFET? Isometric MT
hot FDPF8N50NZU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고12,600
MOSFET (Metal Oxide)
500V
6.5A (Tc)
10V
5V @ 250µA
18nC @ 10V
735pF @ 25V
±25V
-
40W (Tc)
1.2 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot IXFK140N30P
IXYS

MOSFET N-CH 300V 140A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고4,912
MOSFET (Metal Oxide)
300V
140A (Tc)
10V
5V @ 8mA
185nC @ 10V
14800pF @ 25V
±20V
-
1040W (Tc)
24 mOhm @ 70A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
hot DMP2305U-7
Diodes Incorporated

MOSFET P-CH 20V 4.2A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 727pF @ 20V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,333,176
MOSFET (Metal Oxide)
20V
4.2A (Ta)
1.8V, 4.5V
900mV @ 250µA
7.6nC @ 4.5V
727pF @ 20V
±8V
-
1.4W (Ta)
60 mOhm @ 4.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
R6077VNZC17
Rohm Semiconductor

600V 29A TO-3PF, PRESTOMOS WITH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
패키지: -
재고1,260
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V, 15V
6.5V @ 1.9mA
108 nC @ 10 V
5200 pF @ 100 V
±30V
-
113W (Tc)
51mOhm @ 23A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
3LN04SS-TL-H
onsemi

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIR798DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.05mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
130 nC @ 10 V
5050 pF @ 15 V
±20V
Schottky Diode (Body)
83W (Tc)
2.05mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
UF4C120070K3S
Qorvo

1200V/70MOHM, SIC, FAST CASCODE,

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고1,725
SiCFET (Cascode SiCJFET)
1200 V
27.5A (Tc)
-
6V @ 10mA
37.8 nC @ 15 V
1370 pF @ 800 V
±20V
-
217W (Tc)
91mOhm @ 20A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
R6524ENZ4C13
Rohm Semiconductor

650V 24A TO-247, LOW-NOISE POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
패키지: -
재고1,425
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4V @ 750µA
70 nC @ 10 V
1650 pF @ 25 V
±20V
-
245W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
NDCTR08120A
onsemi

MOSFET N-CH 1200V 8A SMD

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C3M0060065D
Wolfspeed, Inc.

SICFET N-CH 650V 37A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고2,121
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
3.6V @ 5mA
46 nC @ 15 V
1020 pF @ 600 V
+15V, -4V
-
150W (Tc)
79mOhm @ 13.2A, 15V
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
2SJ329-05-S5-AZ
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFS5C673NLAFT3G
onsemi

MOSFET N-CHANNEL 60V 50A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
2V @ 35µA
9.5 nC @ 10 V
880 pF @ 25 V
±20V
-
46W (Tc)
9.2mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads