페이지 623 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  623/1,502
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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPB160N04S203ATMA1
Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
재고2,128
MOSFET (Metal Oxide)
40V
160A (Tc)
10V
4V @ 250µA
170nC @ 10V
5300pF @ 25V
±20V
-
300W (Tc)
2.9 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hot IRF7464TR
Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고209,808
MOSFET (Metal Oxide)
200V
1.2A (Ta)
10V
5.5V @ 250µA
14nC @ 10V
280pF @ 25V
±30V
-
2.5W (Ta)
730 mOhm @ 720mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRL1004
Infineon Technologies

MOSFET N-CH 40V 130A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고48,000
MOSFET (Metal Oxide)
40V
130A (Tc)
4.5V, 10V
1V @ 250µA
100nC @ 4.5V
5330pF @ 25V
±16V
-
200W (Tc)
6.5 mOhm @ 78A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PMT21EN,135
NXP

MOSFET N-CH 30V 7.4A SC-73

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고5,232
MOSFET (Metal Oxide)
30V
7.4A (Ta)
4.5V, 10V
2.5V @ 250µA
14.4nC @ 10V
588pF @ 15V
±20V
-
820mW (Ta), 8.33W (Tc)
21 mOhm @ 7.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PMR280UN,115
NXP

MOSFET N-CH 20V 0.98A SOT416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고7,392
MOSFET (Metal Oxide)
20V
980mA (Tc)
1.8V, 4.5V
1V @ 250µA
0.89nC @ 4.5V
45pF @ 20V
±8V
-
530mW (Tc)
340 mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
SI3454CDV-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 4.2A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 1.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고3,952
MOSFET (Metal Oxide)
30V
4.2A (Tc)
4.5V, 10V
3V @ 250µA
10.6nC @ 10V
305pF @ 15V
±20V
-
1.25W (Ta), 1.5W (Tc)
50 mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
hot HAT2099H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 50A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고48,960
MOSFET (Metal Oxide)
30V
50A (Ta)
4.5V, 10V
-
75nC @ 10V
4750pF @ 10V
±20V
-
30W (Tc)
3.7 mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
VS-FB190SA10
Vishay Semiconductor Diodes Division

MOSFET N-CH 100V 190A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 190A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고3,680
MOSFET (Metal Oxide)
100V
190A
10V
4.35V @ 250µA
250nC @ 10V
10700pF @ 25V
±20V
-
568W (Tc)
6.5 mOhm @ 180A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
PSMN7R5-30MLDX
Nexperia USA Inc.

MOSFET N-CH 30V 57A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
패키지: SOT-1210, 8-LFPAK33 (5-Lead)
재고3,232
MOSFET (Metal Oxide)
30V
57A (Tc)
4.5V, 10V
2.2V @ 1mA
11.3nC @ 10V
655pF @ 15V
±20V
-
45W (Tc)
7.6 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
SUP85N10-10-GE3
Vishay Siliconix

MOSFET N-CH 100V 85A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고3,536
MOSFET (Metal Oxide)
100V
85A (Tc)
4.5V, 10V
3V @ 250µA
160nC @ 10V
6550pF @ 25V
±20V
-
3.75W (Ta), 250W (Tc)
10.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
DMG4710SSS-13
Diodes Incorporated

MOSFET N-CH 30V 12.7A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 1.54W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,656
MOSFET (Metal Oxide)
30V
8.8A (Ta)
4.5V, 10V
2.3V @ 250µA
43nC @ 10V
1849pF @ 15V
±12V
Schottky Diode (Body)
1.54W (Ta)
12.5 mOhm @ 11.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot IRFB7437PBF
Infineon Technologies

MOSFET N CH 40V 195A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고12,936
MOSFET (Metal Oxide)
40V
195A (Tc)
6V, 10V
3.9V @ 150µA
225nC @ 10V
7330pF @ 25V
±20V
-
230W (Tc)
2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STW48N60M2
STMicroelectronics

MOSFET N-CH 600V 42A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고13,728
MOSFET (Metal Oxide)
600V
42A (Tc)
10V
4V @ 250µA
70nC @ 10V
3060pF @ 100V
±25V
-
300W (Tc)
70 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STU7NM60N
STMicroelectronics

MOSFET N-CH 600V 5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고209,196
MOSFET (Metal Oxide)
600V
5A (Tc)
10V
4V @ 250µA
14nC @ 10V
363pF @ 50V
±25V
-
45W (Tc)
900 mOhm @ 2.5A, 10V
150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FDC654P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 3.6A SSOT-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 298pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고3,611,064
MOSFET (Metal Oxide)
30V
3.6A (Ta)
4.5V, 10V
3V @ 250µA
9nC @ 10V
298pF @ 15V
±20V
-
1.6W (Ta)
75 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
STF7N65M6
STMicroelectronics

MOSFET N-CH 650V 5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
5A (Tc)
10V
3.75V @ 250µA
6.9 nC @ 10 V
220 pF @ 100 V
±25V
-
20W (Tc)
990mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
QM3009K-ML
MOSLEADER

Single P -30V -2.3A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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MCU45P04A-TP
Micro Commercial Co

Interface

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2539 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
40 V
45A
4.5V, 10V
2.5V @ 250µA
57.1 nC @ 10 V
2539 pF @ 20 V
±20V
-
65W
20mOhm @ 20A, 10V
-55°C ~ 150°C
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR608DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 45V 51A/208A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
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MOSFET (Metal Oxide)
45 V
51A (Ta), 208A (Tc)
4.5V, 10V
2.3V @ 250µA
167 nC @ 10 V
8900 pF @ 20 V
+20V, -16V
-
6.25W (Ta), 104W (Tc)
1.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PJA3402_R1_00001
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고4,890
MOSFET (Metal Oxide)
30 V
4.4A (Ta)
1.8V, 10V
1.2V @ 250µA
11.3 nC @ 10 V
447 pF @ 15 V
±12V
-
1.25W (Ta)
48mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
R6009JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 1.38mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고5,697
MOSFET (Metal Oxide)
600 V
9A (Tc)
15V
7V @ 1.38mA
22 nC @ 15 V
645 pF @ 100 V
±30V
-
53W (Tc)
585mOhm @ 4.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
SIR104LDP-T1-RE3
Vishay Siliconix

MOSFET N-CH 100V 18.8A/81A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고57,018
MOSFET (Metal Oxide)
100 V
18.8A (Ta), 81A (Tc)
4.5V, 10V
3V @ 250µA
110 nC @ 10 V
4870 pF @ 50 V
±20V
-
5.4W (Ta), 100W (Tc)
6.1mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SCT070HU120G3AG
STMicroelectronics

HU3PAK

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HU3PAK
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
30A (Tc)
15V, 18V
4.2V @ 1mA
37 nC @ 18 V
900 pF @ 850 V
+22V, -10V
-
223W (Tc)
87mOhm @ 15A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
HU3PAK
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NP80N03MDE-S18-AY
NEC Corporation

80A, 30V, 0.011OHM, N-CHANNEL ,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: MP-25K
  • Package / Case: TO-220-3
패키지: -
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MOSFET (Metal Oxide)
30 V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
72 nC @ 10 V
3900 pF @ 25 V
±20V
-
1.8W (Ta), 120W (Tc)
7mOhm @ 40A, 10V
175°C
Through Hole
MP-25K
TO-220-3
DMP2037U-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
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MOSFET (Metal Oxide)
20 V
6.1A (Tc)
2.5V, 4.5V
1.2V @ 250µA
14.5 nC @ 8 V
803 pF @ 10 V
±10V
-
800mW
28mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
EPC2207
EPC

TRANS GAN 200V DIE .022OHM

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: -
재고46,158
GaNFET (Gallium Nitride)
200 V
14A (Ta)
5V
2.5V @ 2mA
5.9 nC @ 5 V
600 pF @ 100 V
+6V, -4V
-
-
22mOhm @ 14A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXFT15N100Q3-TRL
IXYS

MOSFET N-CH 1000V 15A TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
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MOSFET (Metal Oxide)
1000 V
15A (Tc)
10V
6.5V @ 4mA
64 nC @ 10 V
3250 pF @ 25 V
±30V
-
690W (Tc)
1.05Ohm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TSG65N190CR-RVG
Taiwan Semiconductor Corporation

650V, 11A, PDFN56, E-MODE GAN TR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고8,997
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