페이지 662 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  662/1,502
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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRL3715ZSPBF
Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고101,544
MOSFET (Metal Oxide)
20V
50A (Tc)
4.5V, 10V
2.55V @ 250µA
11nC @ 4.5V
870pF @ 10V
±20V
-
45W (Tc)
11 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot AON6912ALS
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고13,260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GP1M005A050CH
Global Power Technologies Group

MOSFET N-CH 500V 4.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 92.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,984
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
4V @ 250µA
11nC @ 10V
627pF @ 25V
±30V
-
92.5W (Tc)
1.65 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IXFJ32N50Q
IXYS

MOSFET N-CH 500V 32A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-268
  • Package / Case: TO-220-3, Short Tab
패키지: TO-220-3, Short Tab
재고6,000
MOSFET (Metal Oxide)
500V
32A (Tc)
10V
4V @ 4mA
153nC @ 10V
3950pF @ 25V
±20V
-
360W (Tc)
150 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-268
TO-220-3, Short Tab
hot NTP60N06G
ON Semiconductor

MOSFET N-CH 60V 60A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고450,840
MOSFET (Metal Oxide)
60V
60A (Ta)
10V
4V @ 250µA
81nC @ 10V
3220pF @ 25V
±20V
-
2.4W (Ta), 150W (Tj)
14 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK9505-30A,127
NXP

MOSFET N-CH 30V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고2,608
MOSFET (Metal Oxide)
30V
75A (Tc)
4.5V, 10V
2V @ 1mA
-
8600pF @ 25V
±10V
-
230W (Tc)
4.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFR10N100Q
IXYS

MOSFET N-CH 1000V 9A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
패키지: ISOPLUS247?
재고6,576
MOSFET (Metal Oxide)
1000V
9A (Tc)
10V
5.5V @ 4mA
90nC @ 10V
2900pF @ 25V
±20V
-
250W (Tc)
1.2 Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXFH10N100P
IXYS

MOSFET N-CH 1KV 10A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고7,584
MOSFET (Metal Oxide)
1000V
10A (Tc)
10V
6.5V @ 1mA
56nC @ 10V
3030pF @ 25V
±30V
-
380W (Tc)
1.4 Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
TPCA8055-H,LQ(M
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 56A 8SOP-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고7,248
MOSFET (Metal Oxide)
30V
56A (Ta)
4.5V, 10V
2.3V @ 1mA
91nC @ 10V
7700pF @ 10V
±20V
-
1.6W (Ta), 70W (Tc)
1.9 mOhm @ 28A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SQM40031EL_GE3
Vishay Siliconix

MOSFET P-CH 40V 120A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 39000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,376
MOSFET (Metal Oxide)
40V
120A (Tc)
4.5V, 10V
2.5V @ 250µA
800nC @ 10V
39000pF @ 25V
±20V
-
375W (Tc)
3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDPF5N50NZF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4.2A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고94,152
MOSFET (Metal Oxide)
500V
4.2A (Tc)
10V
5V @ 250µA
12nC @ 10V
485pF @ 25V
±25V
-
30W (Tc)
1.75 Ohm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot IRFPF40PBF
Vishay Siliconix

MOSFET N-CH 900V 4.7A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,264
MOSFET (Metal Oxide)
900V
4.7A (Tc)
10V
4V @ 250µA
120nC @ 10V
1600pF @ 25V
±20V
-
150W (Tc)
2.5 Ohm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
CMPDM7003 TR
Central Semiconductor Corp

MOSFET N-CH 50V 280MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고21,636
MOSFET (Metal Oxide)
50V
280mA (Ta)
1.8V, 10V
1V @ 250µA
0.76nC @ 4.5V
50pF @ 25V
12V
-
350mW (Ta)
2 Ohm @ 50mA, 5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SCT3022ALGC11
Rohm Semiconductor

MOSFET NCH 650V 93A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W (Tc)
  • Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
패키지: TO-247-3
재고14,586
SiCFET (Silicon Carbide)
650V
93A (Tc)
18V
5.6V @ 18.2mA
133nC @ 18V
2208pF @ 500V
+22V, -4V
-
339W (Tc)
28.6 mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
hot SI3499DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 5.3A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 750mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고462,240
MOSFET (Metal Oxide)
8V
5.3A (Ta)
1.5V, 4.5V
750mV @ 250µA
42nC @ 4.5V
-
±5V
-
1.1W (Ta)
23 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
hot ZVP4525GTA
Diodes Incorporated

MOSFET P-CH 250V 0.265A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고100,008
MOSFET (Metal Oxide)
250V
265mA (Ta)
3.5V, 10V
2V @ 1mA
3.45nC @ 10V
73pF @ 25V
±40V
-
2W (Ta)
14 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
RF4G060ATTCR
Rohm Semiconductor

PCH -40V -6A POWER, DFN2020, MOS

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 6-PowerUDFN
패키지: -
재고8,898
MOSFET (Metal Oxide)
40 V
6A (Ta)
4.5V, 10V
2.5V @ 1mA
17.2 nC @ 10 V
880 pF @ 20 V
±20V
-
2W (Ta)
40mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
HUML2020L8
6-PowerUDFN
C3M0045065J1
Wolfspeed, Inc.

650V 45 M SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
재고1,425
SiCFET (Silicon Carbide)
650 V
47A (Tc)
15V
3.6V @ 4.84mA
61 nC @ 15 V
1621 pF @ 400 V
+19V, -8V
-
147W (Tc)
60mOhm @ 17.6A, 15V
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
JDX5008
onsemi

NFET T0220FP JPN

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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DMN62D2UQ-13
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
390mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 10 V
41 pF @ 30 V
±20V
-
500mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
ISZ113N10NM5LF2ATMA1
Infineon Technologies

ISZ113N10NM5LF2ATMA1 MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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-
-
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-
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RSS070P05FRATB
Rohm Semiconductor

MOSFET P-CH 45V 7A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
Request a Quote
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
2.5V @ 1mA
47.6 nC @ 5 V
4100 pF @ 10 V
±20V
-
2W (Ta)
27mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMN3404LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고9,000
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
2V @ 250µA
16 nC @ 10 V
498 pF @ 15 V
±20V
-
720mW (Ta)
28mOhm @ 5.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IRLML6401TR
Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3™/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
-
950mV @ 250µA
15 nC @ 5 V
830 pF @ 10 V
-
-
-
50mOhm @ 4.3A, 4.5V
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
UPA2714GR-E1-A
Renesas Electronics Corporation

P-CHANNEL SWITCHING POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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SQS181ELNW-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 80 V (D-S)

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
패키지: -
재고6,924
MOSFET (Metal Oxide)
80 V
44A (Tc)
4.5V, 10V
2.5V @ 250µA
45 nC @ 10 V
2771 pF @ 25 V
±20V
-
119W (Tc)
31mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
IPB180P04P403ATMA2
Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 410µA
  • Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
패키지: -
재고5,508
MOSFET (Metal Oxide)
40 V
180A (Tc)
-
4V @ 410µA
250 nC @ 10 V
17640 pF @ 25 V
±20V
-
150W (Tc)
2.8mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
S2M0160120K
SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
재고900
SiC (Silicon Carbide Junction Transistor)
1200 V
17A (Tc)
20V
4V @ 2.5mA
26.5 nC @ 20 V
513 pF @ 1000 V
+20V, -5V
-
130W (Tc)
196mOhm @ 10A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4