페이지 670 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559 x831
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  670/1,502
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FQAF33N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 25.8A TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 12.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
패키지: SC-94
재고17,076
MOSFET (Metal Oxide)
100V
25.8A (Tc)
10V
4V @ 250µA
51nC @ 10V
1500pF @ 25V
±25V
-
83W (Tc)
52 mOhm @ 12.9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PF
SC-94
hot FQP4N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고103,464
MOSFET (Metal Oxide)
600V
4.4A (Tc)
10V
5V @ 250µA
20nC @ 10V
670pF @ 25V
±30V
-
106W (Tc)
2.2 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDW252P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8.8A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5045pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 8.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고299,268
MOSFET (Metal Oxide)
20V
8.8A (Ta)
2.5V, 4.5V
1.5V @ 250µA
66nC @ 4.5V
5045pF @ 10V
±12V
-
1.3W (Ta)
12.5 mOhm @ 8.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
APT20M45BVFRG
Microsemi Corporation

MOSFET N-CH 200V 56A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,952
MOSFET (Metal Oxide)
200V
56A (Tc)
10V
4V @ 1mA
195nC @ 10V
4860pF @ 25V
±30V
-
300W (Tc)
45 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
hot IXTH90N15T
IXYS

MOSFET N-CH 150V 90A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고390,000
MOSFET (Metal Oxide)
150V
90A (Tc)
10V
4.5V @ 1mA
80nC @ 10V
4100pF @ 25V
±30V
-
455W (Tc)
20 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXTA300N04T2
IXYS

MOSFET N-CH 40V 300A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,888
MOSFET (Metal Oxide)
40V
300A (Tc)
10V
4V @ 250µA
145nC @ 10V
10700pF @ 25V
±20V
-
480W (Tc)
2.5 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C404NWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: 8-PowerTDFN, 5 Leads
재고3,504
MOSFET (Metal Oxide)
40V
53A (Ta), 378A (Tc)
10V
4V @ 250µA
128nC @ 10V
8400pF @ 25V
±20V
-
3.9W (Ta), 200W (Tc)
0.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
AOB1100L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4833pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,344
MOSFET (Metal Oxide)
100V
8A (Ta), 130A (Tc)
10V
3.8V @ 250µA
100nC @ 10V
4833pF @ 25V
±20V
-
2.1W (Ta), 500W (Tc)
11.7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS5C442NLT1G
ON Semiconductor

MOSFET N-CH 40V 25A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고7,744
MOSFET (Metal Oxide)
40V
27A (Ta), 130A (Tc)
4.5V, 10V
2V @ 250µA
50nC @ 10V
3100pF @ 25V
±20V
-
3.1W (Ta), 69W (Tc)
2.8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot FDN302P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.4A SSOT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 882pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고954,012
MOSFET (Metal Oxide)
20V
2.4A (Ta)
2.5V, 4.5V
1.5V @ 250µA
14nC @ 4.5V
882pF @ 10V
±12V
-
500mW (Ta)
55 mOhm @ 2.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
IXFA60N25X3
IXYS

MOSFET N-CH 250V 60A TO263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,632
MOSFET (Metal Oxide)
250V
60A (Tc)
10V
4.5V @ 1.5mA
50nC @ 10V
3610pF @ 25V
±20V
-
320W (Tc)
23 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTY8N70X2
IXYS

MOSFET N-CHANNEL 700V 8A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,312
MOSFET (Metal Oxide)
700V
8A (Tc)
10V
5V @ 250µA
12nC @ 10V
800pF @ 10V
±30V
-
150W (Tc)
500 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STB8NM60D
STMicroelectronics

MOSFET N-CH 600V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,824
MOSFET (Metal Oxide)
600V
8A (Tc)
10V
5V @ 250µA
18nC @ 10V
380pF @ 25V
±30V
-
100W (Tc)
1 Ohm @ 2.5A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot RFD3055LE
Fairchild/ON Semiconductor

MOSFET N-CH 60V 11A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고422,976
MOSFET (Metal Oxide)
60V
11A (Tc)
5V
3V @ 250µA
11.3nC @ 10V
350pF @ 25V
±16V
-
38W (Tc)
107 mOhm @ 8A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
IPT65R060CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-3
  • Package / Case: 8-PowerSFN
패키지: -
Request a Quote
-
650 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-3
8-PowerSFN
IXFN22N120
IXYS

MOSFET N-CH 22A SOT-227B

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMN2710UTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
패키지: -
재고4,596
MOSFET (Metal Oxide)
20 V
870mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.6 nC @ 4.5 V
42 pF @ 16 V
±6V
-
320mW (Ta)
450mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
NP80N04NLG-S18-AY
NEC Corporation

MOSFET N-CH 40V 80A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
80A (Tc)
-
2.5V @ 250µA
135 nC @ 10 V
6900 pF @ 25 V
-
-
1.8W (Ta), 115W (Tc)
4.8mOhm @ 40A, 10V
175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
IXTT72N10
IXYS

MOSFET N-CH 100V 72A TO268

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IQD063N15NM5ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 159µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-U04
  • Package / Case: 8-PowerTDFN
패키지: -
재고15,000
MOSFET (Metal Oxide)
150 V
14.1A (Ta), 148A (Tc)
8V, 10V
4.6V @ 159µA
60 nC @ 10 V
4700 pF @ 75 V
±20V
-
2.5W (Ta), 278W (Tc)
6.32mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSON-8-U04
8-PowerTDFN
SQJ464EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 32A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고35,085
MOSFET (Metal Oxide)
60 V
32A (Tc)
4.5V, 10V
2.5V @ 250µA
44 nC @ 10 V
2086 pF @ 30 V
±20V
-
45W (Tc)
17mOhm @ 7.1A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
NTPF125N65S3H
onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
24A (Tj)
10V
4V @ 2.1mA
44 nC @ 10 V
2200 pF @ 400 V
±30V
-
37W (Tc)
125mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
TK055U60Z1-RQ
Toshiba Semiconductor and Storage

600V DTMOS VI TOLL 55MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.69mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
패키지: -
재고10,701
MOSFET (Metal Oxide)
600 V
40A (Ta)
10V
4V @ 1.69mA
65 nC @ 10 V
3680 pF @ 300 V
±30V
-
270W (Tc)
55mOhm @ 15A, 10V
150°C
Surface Mount
TOLL
8-PowerSFN
TSM60NB099PW
Taiwan Semiconductor Corporation

600V, 38A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 329W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
38A (Tc)
10V
4V @ 250µA
62 nC @ 10 V
2587 pF @ 100 V
±30V
-
329W (Tc)
99mOhm @ 11.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
SI3459BDV-T1-BE3
Vishay Siliconix

P-CHANNEL 60-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고2,499
MOSFET (Metal Oxide)
60 V
2.2A (Ta), 2.9A (Tc)
4.5V, 10V
3V @ 250µA
12 nC @ 10 V
350 pF @ 30 V
±20V
-
2W (Ta), 3.3W (Tc)
216mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
DMP1009UFDFQ-13
Diodes Incorporated

MOSFET P-CH 12V 11A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
패키지: -
Request a Quote
MOSFET (Metal Oxide)
12 V
11A (Ta)
1.8V, 4.5V
1V @ 250µA
44 nC @ 8 V
1860 pF @ 10 V
±8V
-
2W (Ta)
11mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
XP50AN1K5I
YAGEO XSEMI

MOSFET N-CH 500V 5A TO220CFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.92W (Ta), 31.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220CFM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고3,000
MOSFET (Metal Oxide)
500 V
5A (Tc)
10V
4V @ 250µA
24.6 nC @ 10 V
800 pF @ 100 V
±30V
-
1.92W (Ta), 31.3W (Tc)
1.55Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220CFM
TO-220-3 Full Pack
DMN2015UFDF-13
Diodes Incorporated

MOSFET N-CH 20V 15.2A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6
  • Package / Case: 6-UDFN Exposed Pad
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
15.2A (Ta)
1.5V, 4.5V
1.2V @ 250µA
42.3 nC @ 10 V
1439 pF @ 10 V
±12V
-
1.8W (Ta)
9mOhm @ 8.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6
6-UDFN Exposed Pad