페이지 793 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품

AUIRFR9024N

Infineon Technologies

MOSFET P-CH 55V 11A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,328

MOSFET (Metal Oxide)

55V

11A (Tc)

10V

4V @ 250µA

19nC @ 10V

350pF @ 25V

±20V

-

38W (Tc)

175 mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-PAK (TO-252AA)

TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRFS4610

Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,400

MOSFET (Metal Oxide)

100V

73A (Tc)

10V

4V @ 100µA

140nC @ 10V

3550pF @ 50V

±20V

-

190W (Tc)

14 mOhm @ 44A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPI100N03S2-03

Infineon Technologies

MOSFET N-CH 30V 100A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고2,480

MOSFET (Metal Oxide)

30V

100A (Tc)

10V

4V @ 250µA

150nC @ 10V

7020pF @ 25V

±20V

-

300W (Tc)

3.3 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2Pak, TO-262AA

AON6444L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 8DFN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-VDFN Exposed Pad

패키지: 8-VDFN Exposed Pad

재고19,200

-

Surface Mount

8-DFN (5x6)

8-VDFN Exposed Pad

2N7002-E3

Vishay Siliconix

MOSFET N-CH 60V 115MA SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,360

MOSFET (Metal Oxide)

60V

115mA (Ta)

5V, 10V

2.5V @ 250µA

-

50pF @ 25V

±20V

-

200mW (Ta)

7.5 Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-236

TO-236-3, SC-59, SOT-23-3

FQI10N60CTU

Fairchild/ON Semiconductor

MOSFET N-CH 600V 9.5A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고7,984

MOSFET (Metal Oxide)

600V

9.5A (Tc)

10V

4V @ 250µA

57nC @ 10V

2040pF @ 25V

±30V

-

3.13W (Ta), 156W (Tc)

730 mOhm @ 4.75A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

IRFPE40

Vishay Siliconix

MOSFET N-CH 800V 5.4A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고37,020

MOSFET (Metal Oxide)

800V

5.4A (Tc)

10V

4V @ 250µA

130nC @ 10V

1900pF @ 25V

±20V

-

150W (Tc)

2 Ohm @ 3.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IRF640S

Vishay Siliconix

MOSFET N-CH 200V 18A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고1,084,020

MOSFET (Metal Oxide)

200V

18A (Tc)

10V

4V @ 250µA

70nC @ 10V

1300pF @ 25V

±20V

-

3.1W (Ta), 130W (Tc)

180 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT5016BFLLG

Microsemi Corporation

MOSFET N-CH 500V 30A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2833pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

패키지: TO-247-3

재고6,544

MOSFET (Metal Oxide)

500V

30A (Tc)

10V

5V @ 1mA

72nC @ 10V

2833pF @ 25V

±30V

-

329W (Tc)

160 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 [B]

TO-247-3

IXTA2N80P

IXYS

MOSFET N-CH 800V 2A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,344

MOSFET (Metal Oxide)

800V

2A (Tc)

10V

5.5V @ 50µA

10.6nC @ 10V

440pF @ 25V

±30V

-

70W (Tc)

6 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (IXTA)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NVTFS5116PLWFTWG

ON Semiconductor

MOSFET P-CH 60V 14A U8FL

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

재고3,488

MOSFET (Metal Oxide)

60V

6A (Ta)

4.5V, 10V

3V @ 250µA

25nC @ 10V

1258pF @ 25V

±20V

-

3.2W (Ta), 21W (Tc)

52 mOhm @ 7A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

NDDP010N25AZT4H

ON Semiconductor

MOSFET N-CH 250V 10A TP-FA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK/TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,288

MOSFET (Metal Oxide)

250V

10A (Ta)

10V

4.5V @ 1mA

16nC @ 10V

980pF @ 20V

±30V

-

1W (Ta), 52W (Tc)

420 mOhm @ 5A, 10V

150°C (TJ)

Surface Mount

DPAK/TP-FA

TO-252-3, DPak (2 Leads + Tab), SC-63

TK6A80E,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: TO-220-3 Full Pack, Isolated Tab

재고5,856

MOSFET (Metal Oxide)

800V

6A (Ta)

10V

4V @ 600µA

32nC @ 10V

1350pF @ 25V

±30V

-

45W (Tc)

1.7 Ohm @ 3A, 10V

150°C (TJ)

Through Hole

TO-220SIS

TO-220-3 Full Pack, Isolated Tab

STS11NF30L

STMicroelectronics

MOSFET N-CH 30V 11A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고514,752

MOSFET (Metal Oxide)

30V

11A (Tc)

5V, 10V

1V @ 250µA

30nC @ 5V

1440pF @ 25V

±18V

-

2.5W (Tc)

10.5 mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

ZVN4424GTA

Diodes Incorporated

MOSFET N-CH 240V 500MA SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±40V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

재고372,936

MOSFET (Metal Oxide)

240V

500mA (Ta)

2.5V, 10V

1.8V @ 1mA

-

200pF @ 25V

±40V

-

2.5W (Ta)

5.5 Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

BVSS84LT1G

ON Semiconductor

MOSFET P-CH 50V 130MA SOT-23-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고25,002

MOSFET (Metal Oxide)

50V

130mA (Ta)

5V

2V @ 250µA

2.2nC @ 10V

36pF @ 5V

±20V

-

225mW (Ta)

10 Ohm @ 100mA, 5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

IPC60R160C6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

DMP4011SPSQ-13

Diodes Incorporated

MOSFET P-CH 40V PWRDI5060

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN

패키지: -

재고4,863

MOSFET (Metal Oxide)

40 V

11.7A (Ta), 76A (Tc)

4.5V, 10V

2.5V @ 250µA

52 nC @ 10 V

2747 pF @ 20 V

±20V

-

1.3W (Ta)

11mOhm @ 9.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI5060-8

8-PowerTDFN

DMN2015UFDF-7

Diodes Incorporated

MOSFET N-CH 20V 15.2A 6UDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6
Package / Case: 6-UDFN Exposed Pad

패키지: -

재고18,000

MOSFET (Metal Oxide)

20 V

15.2A (Ta)

1.5V, 4.5V

1.2V @ 250µA

42.3 nC @ 10 V

1439 pF @ 10 V

±12V

-

1.8W (Ta)

9mOhm @ 8.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

U-DFN2020-6

6-UDFN Exposed Pad

FDBL9401-F085

onsemi

MOSFET N-CH 40V 300A 8HPSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 429W (Tj)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HPSOF
Package / Case: 8-PowerSFN

패키지: -

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MOSFET (Metal Oxide)

40 V

300A (Tc)

10V

4V @ 250µA

296 nC @ 10 V

15900 pF @ 25 V

±20V

-

429W (Tj)

0.65mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-HPSOF

8-PowerSFN

PJQ5424_R2_00001

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
Package / Case: 8-PowerVDFN

패키지: -

재고7,440

MOSFET (Metal Oxide)

30 V

13.5A (Ta), 100A (Tc)

4.5V, 10V

2.5V @ 250µA

24 nC @ 4.5 V

2238 pF @ 25 V

±20V

-

2W (Ta), 83W (Tc)

3.8mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DFN5060-8

8-PowerVDFN

2SK2010-CTV-YA14

onsemi

NCH 10V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

SI2333DS-T1-BE3

Vishay Siliconix

P-CHANNEL 12-V (D-S) MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

재고3,780

MOSFET (Metal Oxide)

12 V

4.1A (Ta)

1.8V, 4.5V

1V @ 250µA

18 nC @ 4.5 V

1100 pF @ 6 V

±8V

-

750mW (Ta)

32mOhm @ 5.3A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

94-4344PBF

Infineon Technologies

IC MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

SIHB125N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 25A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고8,160

MOSFET (Metal Oxide)

600 V

25A (Tc)

10V

5V @ 250µA

47 nC @ 10 V

1533 pF @ 100 V

±30V

-

179W (Tc)

125mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

RJK03J5DNS-00-J5

Renesas Electronics Corporation

N-CHANNEL POWER SWITCHING MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IPW50R250CPFKSA1

Infineon Technologies

MOSFET N-CH 500V 13A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

패키지: -

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MOSFET (Metal Oxide)

500 V

13A (Tc)

10V

3.5V @ 520µA

36 nC @ 10 V

1420 pF @ 100 V

±20V

-

114W (Tc)

250mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

AM2334N-T1-PF-ML

MOSLEADER

Single N 30V 3.5A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR9024N	Infineon Technologies	MOSFET P-CH 55V 11A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,328	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	38W (Tc)	175 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFS4610	Infineon Technologies	MOSFET N-CH 100V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,400	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPI100N03S2-03	Infineon Technologies	MOSFET N-CH 30V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고2,480	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	4V @ 250µA	150nC @ 10V	7020pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
AON6444L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 8DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-VDFN Exposed Pad	패키지: 8-VDFN Exposed Pad	재고19,200	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-DFN (5x6)	8-VDFN Exposed Pad
2N7002-E3	Vishay Siliconix	MOSFET N-CH 60V 115MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,360	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236	TO-236-3, SC-59, SOT-23-3
FQI10N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 9.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고7,984	MOSFET (Metal Oxide)	600V	9.5A (Tc)	10V	4V @ 250µA	57nC @ 10V	2040pF @ 25V	±30V	-	3.13W (Ta), 156W (Tc)	730 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFPE40	Vishay Siliconix	MOSFET N-CH 800V 5.4A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고37,020	MOSFET (Metal Oxide)	800V	5.4A (Tc)	10V	4V @ 250µA	130nC @ 10V	1900pF @ 25V	±20V	-	150W (Tc)	2 Ohm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF640S	Vishay Siliconix	MOSFET N-CH 200V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고1,084,020	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	±20V	-	3.1W (Ta), 130W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT5016BFLLG	Microsemi Corporation	MOSFET N-CH 500V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2833pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	패키지: TO-247-3	재고6,544	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	5V @ 1mA	72nC @ 10V	2833pF @ 25V	±30V	-	329W (Tc)	160 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
IXTA2N80P	IXYS	MOSFET N-CH 800V 2A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,344	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5.5V @ 50µA	10.6nC @ 10V	440pF @ 25V	±30V	-	70W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVTFS5116PLWFTWG	ON Semiconductor	MOSFET P-CH 60V 14A U8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	패키지: 8-PowerWDFN	재고3,488	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 25V	±20V	-	3.2W (Ta), 21W (Tc)	52 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NDDP010N25AZT4H	ON Semiconductor	MOSFET N-CH 250V 10A TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,288	MOSFET (Metal Oxide)	250V	10A (Ta)	10V	4.5V @ 1mA	16nC @ 10V	980pF @ 20V	±30V	-	1W (Ta), 52W (Tc)	420 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
TK6A80E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: TO-220-3 Full Pack, Isolated Tab	재고5,856	MOSFET (Metal Oxide)	800V	6A (Ta)	10V	4V @ 600µA	32nC @ 10V	1350pF @ 25V	±30V	-	45W (Tc)	1.7 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
STS11NF30L	STMicroelectronics	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고514,752	MOSFET (Metal Oxide)	30V	11A (Tc)	5V, 10V	1V @ 250µA	30nC @ 5V	1440pF @ 25V	±18V	-	2.5W (Tc)	10.5 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ZVN4424GTA	Diodes Incorporated	MOSFET N-CH 240V 500MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: TO-261-4, TO-261AA	재고372,936	MOSFET (Metal Oxide)	240V	500mA (Ta)	2.5V, 10V	1.8V @ 1mA	-	200pF @ 25V	±40V	-	2.5W (Ta)	5.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BVSS84LT1G	ON Semiconductor	MOSFET P-CH 50V 130MA SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고25,002	MOSFET (Metal Oxide)	50V	130mA (Ta)	5V	2V @ 250µA	2.2nC @ 10V	36pF @ 5V	±20V	-	225mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPC60R160C6UNSAWNX6SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP4011SPSQ-13	Diodes Incorporated	MOSFET P-CH 40V PWRDI5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	패키지: -	재고4,863	MOSFET (Metal Oxide)	40 V	11.7A (Ta), 76A (Tc)	4.5V, 10V	2.5V @ 250µA	52 nC @ 10 V	2747 pF @ 20 V	±20V	-	1.3W (Ta)	11mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
DMN2015UFDF-7	Diodes Incorporated	MOSFET N-CH 20V 15.2A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 Package / Case: 6-UDFN Exposed Pad	패키지: -	재고18,000	MOSFET (Metal Oxide)	20 V	15.2A (Ta)	1.5V, 4.5V	1.2V @ 250µA	42.3 nC @ 10 V	1439 pF @ 10 V	±12V	-	1.8W (Ta)	9mOhm @ 8.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6	6-UDFN Exposed Pad
FDBL9401-F085	onsemi	MOSFET N-CH 40V 300A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	40 V	300A (Tc)	10V	4V @ 250µA	296 nC @ 10 V	15900 pF @ 25 V	±20V	-	429W (Tj)	0.65mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
PJQ5424_R2_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	패키지: -	재고7,440	MOSFET (Metal Oxide)	30 V	13.5A (Ta), 100A (Tc)	4.5V, 10V	2.5V @ 250µA	24 nC @ 4.5 V	2238 pF @ 25 V	±20V	-	2W (Ta), 83W (Tc)	3.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
2SK2010-CTV-YA14	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2333DS-T1-BE3	Vishay Siliconix	P-CHANNEL 12-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: -	재고3,780	MOSFET (Metal Oxide)	12 V	4.1A (Ta)	1.8V, 4.5V	1V @ 250µA	18 nC @ 4.5 V	1100 pF @ 6 V	±8V	-	750mW (Ta)	32mOhm @ 5.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
94-4344PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB125N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고8,160	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	5V @ 250µA	47 nC @ 10 V	1533 pF @ 100 V	±30V	-	179W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RJK03J5DNS-00-J5	Renesas Electronics Corporation	N-CHANNEL POWER SWITCHING MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW50R250CPFKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	500 V	13A (Tc)	10V	3.5V @ 520µA	36 nC @ 10 V	1420 pF @ 100 V	±20V	-	114W (Tc)	250mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
AM2334N-T1-PF-ML	MOSLEADER	Single N 30V 3.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-