페이지 839 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품

SPB80N03S2L-04

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고60,000

MOSFET (Metal Oxide)

30V

80A (Tc)

4.5V, 10V

2V @ 130µA

105nC @ 10V

3900pF @ 25V

±20V

-

188W (Tc)

3.9 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP054NE8NGHKSA2

Infineon Technologies

MOSFET N-CH 85V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고5,440

MOSFET (Metal Oxide)

85V

100A (Tc)

10V

4V @ 250µA

180nC @ 10V

12100pF @ 40V

±20V

-

300W (Tc)

5.4 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IRLU3715ZPBF

Infineon Technologies

MOSFET N-CH 20V 49A I-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고10,308

MOSFET (Metal Oxide)

20V

49A (Tc)

4.5V, 10V

2.55V @ 250µA

11nC @ 4.5V

810pF @ 10V

±20V

-

40W (Tc)

11 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

AO3419_101

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,328

-

2N6661JTX02

Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can

패키지: TO-205AD, TO-39-3 Metal Can

재고5,024

MOSFET (Metal Oxide)

90V

860mA (Tc)

5V, 10V

2V @ 1mA

-

50pF @ 25V

±20V

-

725mW (Ta), 6.25W (Tc)

4 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-39

TO-205AD, TO-39-3 Metal Can

2N7225U

Microsemi Corporation

MOSFET N-CH 200V SMD1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB

패키지: TO-267AB

재고7,152

MOSFET (Metal Oxide)

200V

27.4A (Tc)

10V

4V @ 250µA

115nC @ 10V

-

±20V

-

4W (Ta), 150W (Tc)

100 mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-267AB

HUFA76445S3ST

Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,408

MOSFET (Metal Oxide)

60V

75A (Tc)

4.5V, 10V

3V @ 250µA

150nC @ 10V

4965pF @ 25V

±16V

-

310W (Tc)

6.5 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HUF75829D3S

Fairchild/ON Semiconductor

MOSFET N-CH 150V 18A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,992

MOSFET (Metal Oxide)

150V

18A (Tc)

10V

4V @ 250µA

70nC @ 20V

1080pF @ 25V

±20V

-

110W (Tc)

110 mOhm @ 18A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPak (2 Leads + Tab), SC-63

AOD480

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 25A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고714,324

MOSFET (Metal Oxide)

30V

25A (Tc)

4.5V, 10V

2.5V @ 250µA

14nC @ 10V

820pF @ 15V

±20V

-

2.5W (Ta), 21W (Tc)

23 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

EFC4612R-S-TR

ON Semiconductor

MOSFET N-CH 24V 6A EFCP

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: EFCP1313-4CC-037
Package / Case: 4-XFBGA

패키지: 4-XFBGA

재고29,220

-

150°C (TJ)

Surface Mount

EFCP1313-4CC-037

4-XFBGA

STI6N80K5

STMicroelectronics

MOSFET N-CH 800V 4.5A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V
Vgs (Max): 30V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고6,320

MOSFET (Metal Oxide)

800V

4.5A (Tc)

10V

5V @ 100µA

7.5nC @ 10V

255pF @ 100V

30V

-

85W (Tc)

1.6 Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

IPA80R1K0CEXKSA2

Infineon Technologies

MOSFET N-CH 800V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고6,360

MOSFET (Metal Oxide)

800V

5.7A (Tc)

10V

3.9V @ 250µA

31nC @ 10V

785pF @ 100V

±20V

-

32W (Tc)

950 mOhm @ 3.6A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

AON6413

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 22A 8DFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

패키지: 8-PowerSMD, Flat Leads

재고4,896

MOSFET (Metal Oxide)

30V

22A (Ta), 32A (Tc)

4.5V, 10V

2.7V @ 250µA

58nC @ 10V

2142pF @ 15V

±25V

-

6.2W (Ta), 48W (Tc)

8.5 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

IPW60R190C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 20.2A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

패키지: -

재고846

MOSFET (Metal Oxide)

600 V

20.2A (Tc)

10V

3.5V @ 630µA

63 nC @ 10 V

1400 pF @ 100 V

±20V

-

151W (Tc)

190mOhm @ 9.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

SM2309PSAC-TRG-ML

MOSLEADER

P -30V -3.1A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

SQ3456CEV-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 30 V (D-S)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: -

재고8,475

MOSFET (Metal Oxide)

30 V

7.8A (Tc)

4.5V, 10V

2.5V @ 250µA

10 nC @ 10 V

460 pF @ 15 V

±20V

-

4W (Tc)

35mOhm @ 6A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

6-TSOP

SOT-23-6 Thin, TSOT-23-6

MGSF3455XT1

onsemi

P-CHANNEL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

STF26N60DM6

STMicroelectronics

MOSFET N-CH 600V 18A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

패키지: -

재고2,997

MOSFET (Metal Oxide)

600 V

18A (Tc)

10V

4.75V @ 250µA

24 nC @ 10 V

940 pF @ 100 V

±25V

-

30W (Tc)

195mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

IPP60R040S7XKSA1

Infineon Technologies

HIGH POWER_NEW PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

Request a Quote

MOSFET (Metal Oxide)

600 V

13A (Tc)

12V

4.5V @ 790µA

83 nC @ 12 V

3127 pF @ 300 V

±20V

-

245W (Tc)

40mOhm @ 13A, 12V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

DI032N03PTK

Diotec Semiconductor

IC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-QFN (3x3)
Package / Case: 8-PowerVDFN

패키지: -

Request a Quote

MOSFET (Metal Oxide)

30 V

32A (Tc)

4.5V, 10V

2.5V @ 250µA

38 nC @ 10 V

2300 pF @ 15 V

±20V

-

28W (Tc)

5mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-QFN (3x3)

8-PowerVDFN

NVTFS8D1N08HTAG

onsemi

MOSFET N-CHANNEL 80V 61A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

패키지: -

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MOSFET (Metal Oxide)

80 V

14A (Ta), 61A (Tc)

6V, 10V

4V @ 270µA

23 nC @ 10 V

1450 pF @ 40 V

±20V

-

3.8W (Ta), 75W (Tc)

8.3mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

MCQ05N15-TP

Micro Commercial Co

MOSFET N-CH 150V 5A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 75 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2W
Rds On (Max) @ Id, Vgs: 63mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

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MOSFET (Metal Oxide)

150 V

5A (Tj)

-

4V @ 250µA

22 nC @ 10 V

1179 pF @ 75 V

±25V

-

2W

63mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOP

8-SOIC (0.154", 3.90mm Width)

APT50M85JVR

Microchip Technology

MOSFET N-CH 500V 50A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

패키지: -

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MOSFET (Metal Oxide)

500 V

50A (Tc)

-

4V @ 1mA

535 nC @ 10 V

10800 pF @ 25 V

-

85mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

TP65H300G4JSGB-TR

Transphorm

GANFET N-CH 650V 9.2A QFN5X6

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 41.6W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

패키지: -

재고11,826

GaNFET (Gallium Nitride)

650 V

9.2A (Tc)

6V

2.8V @ 500µA

3.5 nC @ 10 V

400 pF @ 400 V

±10V

-

41.6W (Tc)

312mOhm @ 6.5A, 6V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

SSM6K518NU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 6A 6UDFNB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

패키지: -

재고18,414

MOSFET (Metal Oxide)

20 V

6A (Ta)

1.5V, 4.5V

1V @ 1mA

3.6 nC @ 4.5 V

410 pF @ 10 V

±8V

-

1.25W (Ta)

33mOhm @ 4A, 4.5V

150°C

Surface Mount

6-UDFNB (2x2)

6-WDFN Exposed Pad

NTH4L027N65S3F

onsemi

MOSFET N-CH 650V 75A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

패키지: -

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MOSFET (Metal Oxide)

650 V

75A (Tc)

10V

5V @ 3mA

259 nC @ 10 V

7690 pF @ 400 V

±30V

-

595W (Tc)

27.4mOhm @ 35A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-4L

TO-247-4

RJK0328DPB-00-J0

Renesas Electronics Corporation

MOSFET N-CH 30V 60A LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669

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MOSFET (Metal Oxide)

30 V

60A (Ta)

-

42 nC @ 4.5 V

6380 pF @ 10 V

-

2.1mOhm @ 30A, 10V

-

Surface Mount

LFPAK

SC-100, SOT-669

NTP6N60

onsemi

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPB80N03S2L-04	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고60,000	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 130µA	105nC @ 10V	3900pF @ 25V	±20V	-	188W (Tc)	3.9 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP054NE8NGHKSA2	Infineon Technologies	MOSFET N-CH 85V 100A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고5,440	MOSFET (Metal Oxide)	85V	100A (Tc)	10V	4V @ 250µA	180nC @ 10V	12100pF @ 40V	±20V	-	300W (Tc)	5.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRLU3715ZPBF	Infineon Technologies	MOSFET N-CH 20V 49A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고10,308	MOSFET (Metal Oxide)	20V	49A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	810pF @ 10V	±20V	-	40W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
AO3419_101	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N6661JTX02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	패키지: TO-205AD, TO-39-3 Metal Can	재고5,024	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N7225U	Microsemi Corporation	MOSFET N-CH 200V SMD1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	패키지: TO-267AB	재고7,152	MOSFET (Metal Oxide)	200V	27.4A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	100 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
HUFA76445S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,408	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75829D3S	Fairchild/ON Semiconductor	MOSFET N-CH 150V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,992	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	4V @ 250µA	70nC @ 20V	1080pF @ 25V	±20V	-	110W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
AOD480	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 25A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고714,324	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	14nC @ 10V	820pF @ 15V	±20V	-	2.5W (Ta), 21W (Tc)	23 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
EFC4612R-S-TR	ON Semiconductor	MOSFET N-CH 24V 6A EFCP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1313-4CC-037 Package / Case: 4-XFBGA	패키지: 4-XFBGA	재고29,220	-	-	-	-	-	-	-	-	-	-	-	150°C (TJ)	Surface Mount	EFCP1313-4CC-037	4-XFBGA
STI6N80K5	STMicroelectronics	MOSFET N-CH 800V 4.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고6,320	MOSFET (Metal Oxide)	800V	4.5A (Tc)	10V	5V @ 100µA	7.5nC @ 10V	255pF @ 100V	30V	-	85W (Tc)	1.6 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IPA80R1K0CEXKSA2	Infineon Technologies	MOSFET N-CH 800V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고6,360	MOSFET (Metal Oxide)	800V	5.7A (Tc)	10V	3.9V @ 250µA	31nC @ 10V	785pF @ 100V	±20V	-	32W (Tc)	950 mOhm @ 3.6A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AON6413	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 22A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	패키지: 8-PowerSMD, Flat Leads	재고4,896	MOSFET (Metal Oxide)	30V	22A (Ta), 32A (Tc)	4.5V, 10V	2.7V @ 250µA	58nC @ 10V	2142pF @ 15V	±25V	-	6.2W (Ta), 48W (Tc)	8.5 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IPW60R190C6FKSA1	Infineon Technologies	MOSFET N-CH 600V 20.2A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	패키지: -	재고846	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	3.5V @ 630µA	63 nC @ 10 V	1400 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
SM2309PSAC-TRG-ML	MOSLEADER	P -30V -3.1A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQ3456CEV-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 30 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	패키지: -	재고8,475	MOSFET (Metal Oxide)	30 V	7.8A (Tc)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	460 pF @ 15 V	±20V	-	4W (Tc)	35mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
MGSF3455XT1	onsemi	P-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STF26N60DM6	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	패키지: -	재고2,997	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4.75V @ 250µA	24 nC @ 10 V	940 pF @ 100 V	±25V	-	30W (Tc)	195mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPP60R040S7XKSA1	Infineon Technologies	HIGH POWER_NEW PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	13A (Tc)	12V	4.5V @ 790µA	83 nC @ 12 V	3127 pF @ 300 V	±20V	-	245W (Tc)	40mOhm @ 13A, 12V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
DI032N03PTK	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	38 nC @ 10 V	2300 pF @ 15 V	±20V	-	28W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
NVTFS8D1N08HTAG	onsemi	MOSFET N-CHANNEL 80V 61A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	80 V	14A (Ta), 61A (Tc)	6V, 10V	4V @ 270µA	23 nC @ 10 V	1450 pF @ 40 V	±20V	-	3.8W (Ta), 75W (Tc)	8.3mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
MCQ05N15-TP	Micro Commercial Co	MOSFET N-CH 150V 5A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 75 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: 63mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	5A (Tj)	-	4V @ 250µA	22 nC @ 10 V	1179 pF @ 75 V	±25V	-	2W	63mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
APT50M85JVR	Microchip Technology	MOSFET N-CH 500V 50A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	패키지: -	Request a Quote	MOSFET (Metal Oxide)	500 V	50A (Tc)	-	4V @ 1mA	535 nC @ 10 V	10800 pF @ 25 V	-	-	-	85mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
TP65H300G4JSGB-TR	Transphorm	GANFET N-CH 650V 9.2A QFN5X6 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 2.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 41.6W (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	패키지: -	재고11,826	GaNFET (Gallium Nitride)	650 V	9.2A (Tc)	6V	2.8V @ 500µA	3.5 nC @ 10 V	400 pF @ 400 V	±10V	-	41.6W (Tc)	312mOhm @ 6.5A, 6V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
SSM6K518NU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 6A 6UDFNB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	패키지: -	재고18,414	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	1V @ 1mA	3.6 nC @ 4.5 V	410 pF @ 10 V	±8V	-	1.25W (Ta)	33mOhm @ 4A, 4.5V	150°C	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
NTH4L027N65S3F	onsemi	MOSFET N-CH 650V 75A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	5V @ 3mA	259 nC @ 10 V	7690 pF @ 400 V	±30V	-	595W (Tc)	27.4mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
RJK0328DPB-00-J0	Renesas Electronics Corporation	MOSFET N-CH 30V 60A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	60A (Ta)	-	-	42 nC @ 4.5 V	6380 pF @ 10 V	-	-	-	2.1mOhm @ 30A, 10V	-	Surface Mount	LFPAK	SC-100, SOT-669
NTP6N60	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-