페이지 845 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  845/1,502
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF3704ZCS
Infineon Technologies

MOSFET N-CH 20V 67A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고392,532
MOSFET (Metal Oxide)
20V
67A (Tc)
4.5V, 10V
2.55V @ 250µA
13nC @ 4.5V
1220pF @ 10V
±20V
-
57W (Tc)
7.9 mOhm @ 21A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot AO7403
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 0.7A SC70-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 700mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고1,544,856
MOSFET (Metal Oxide)
20V
700mA (Ta)
1.8V, 4.5V
900mV @ 250µA
1.44nC @ 4.5V
114pF @ 10V
±8V
-
350mW (Ta)
470 mOhm @ 700mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
SI5858DU-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 6A PPAK CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Dual
  • Package / Case: PowerPAK? ChipFET? Dual
패키지: PowerPAK? ChipFET? Dual
재고2,240
MOSFET (Metal Oxide)
20V
6A (Tc)
1.8V, 4.5V
1V @ 250µA
16nC @ 8V
520pF @ 10V
±8V
Schottky Diode (Isolated)
2.3W (Ta), 8.3W (Tc)
39 mOhm @ 4.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Dual
PowerPAK? ChipFET? Dual
hot FDD6796
Fairchild/ON Semiconductor

MOSFET N-CH 25V 20A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2315pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고25,740
MOSFET (Metal Oxide)
25V
20A (Ta), 40A (Tc)
4.5V, 10V
3V @ 250µA
41nC @ 10V
2315pF @ 13V
±20V
-
3.7W (Ta), 42W (Tc)
5.7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
RRS130N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,000
MOSFET (Metal Oxide)
30V
13A (Ta)
-
-
45nC @ 5V
2600pF @ 10V
-
-
-
9.5 mOhm @ 13A, 10V
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
HUFA75332G3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 60A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 145W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,112
MOSFET (Metal Oxide)
55V
60A (Tc)
10V
4V @ 250µA
85nC @ 20V
1300pF @ 25V
±20V
-
145W (Tc)
19 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
hot HUFA75333S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 66A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 66A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고9,588
MOSFET (Metal Oxide)
55V
66A (Tc)
10V
4V @ 250µA
85nC @ 20V
1300pF @ 25V
±20V
-
150W (Tc)
16 mOhm @ 66A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot HUF76429D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,816
MOSFET (Metal Oxide)
60V
20A (Tc)
4.5V, 10V
3V @ 250µA
46nC @ 10V
1480pF @ 25V
±16V
-
110W (Tc)
23 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP5P20
Fairchild/ON Semiconductor

MOSFET P-CH 200V 4.8A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고9,540
MOSFET (Metal Oxide)
200V
4.8A (Tc)
10V
5V @ 250µA
13nC @ 10V
430pF @ 25V
±30V
-
75W (Tc)
1.4 Ohm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXTN79N20
IXYS

MOSFET N-CH 200V 79A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고5,008
MOSFET (Metal Oxide)
200V
79A
-
4V @ 20mA
-
-
-
-
-
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IXTH260N055T2
IXYS

MOSFET N-CH 55V 260A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,816
MOSFET (Metal Oxide)
55V
260A (Tc)
10V
4V @ 250µA
140nC @ 10V
10800pF @ 25V
±20V
-
480W (Tc)
3.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
FCP099N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V, 99 MOHM,TO220 PK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고4,224
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDD9410L_F085
Fairchild/ON Semiconductor

PT8N 40V N-CHANNEL LL POWERTRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,112
MOSFET (Metal Oxide)
40V
50A (Tc)
10V
3V @ 250µA
43nC @ 10V
1960pF @ 20V
±20V
-
75W (Tc)
4.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
BUK761R6-40E,118
Nexperia USA Inc.

MOSFET N-CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,480
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
4V @ 1mA
145nC @ 10V
11340pF @ 25V
±20V
-
349W (Tc)
1.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MTM861280LBF
Panasonic Electronic Components

MOSFET P-CH 20V 1A WSSMINI6-F1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSSMini6-F1
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고4,000
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4V
1.5V @ 1mA
-
80pF @ 10V
±12V
-
540mW (Ta)
420 mOhm @ 500mA, 4V
150°C (TJ)
Surface Mount
WSSMini6-F1
6-SMD, Flat Leads
CPH3360-TL-W
ON Semiconductor

MOSFET P-CH 30V 1.6A CPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 303 mOhm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고27,558
MOSFET (Metal Oxide)
30V
1.6A (Ta)
4V, 10V
2.6V @ 1mA
2.2nC @ 10V
82pF @ 10V
±20V
-
900mW (Ta)
303 mOhm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
EPC2037
EPC

TRANS GAN 100V 550MOHM BUMPED DI

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고249,630
GaNFET (Gallium Nitride)
100V
1.7A (Ta)
5V
2.5V @ 80µA
0.12nC @ 5V
14pF @ 50V
+6V, -4V
-
-
550 mOhm @ 100mA, 5V
-40°C ~ 150°C (TJ)
Surface Mount
-
-
hot IRLML6302GTRPBF
Infineon Technologies

MOSFET P-CH 20V 0.78A SOT-23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고234,204
MOSFET (Metal Oxide)
20V
780mA (Ta)
2.7V, 4.5V
1.5V @ 250µA
3.6nC @ 4.5V
97pF @ 15V
±12V
-
540mW (Ta)
600 mOhm @ 610mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
SI2312CDS-T1-GE3-ML
MOSLEADER

N 20V 6A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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NTMTS1D5N08H
onsemi

T8-80V IN PQFN88 FOR INDU

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 255A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 490µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.2W (Ta), 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN
패키지: -
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MOSFET (Metal Oxide)
80 V
36A (Ta), 255A (Tc)
6V, 10V
4V @ 490µA
125 nC @ 10 V
8220 pF @ 40 V
±20V
-
4.2W (Ta), 208W (Tc)
1.5mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFNW (8.3x8.4)
8-PowerTDFN
IPP076N12N3GXKSA1
Infineon Technologies

MOSFET N-CH 120V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
패키지: -
재고753
MOSFET (Metal Oxide)
120 V
100A (Tc)
10V
4V @ 130µA
101 nC @ 10 V
6640 pF @ 60 V
±20V
-
188W (Tc)
7.6mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
CES2303-ML
MOSLEADER

Single P -30V -1.9A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
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RFD14N06
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
14A (Tc)
10V
4V @ 250µA
40 nC @ 20 V
570 pF @ 25 V
±20V
-
48W (Tc)
100mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
STWA30N65DM6AG
STMicroelectronics

MOSFET N-CH 650V 28A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 284W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
패키지: -
재고2,070
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
4.75V @ 250µA
46 nC @ 10 V
2000 pF @ 100 V
±25V
-
284W (Tc)
110mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
SSFD6909
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -10A, -60V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고14,436
MOSFET (Metal Oxide)
60 V
10A (Tc)
4.5V, 10V
2.5V @ 250µA
15 nC @ 10 V
1300 pF @ 30 V
±20V
-
32W (Tc)
105mOhm @ 6A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
C2M0080170P
Wolfspeed, Inc.

SICFET N-CH 1700V 40A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 28A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
패키지: -
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SiCFET (Silicon Carbide)
1700 V
40A (Tc)
20V
4V @ 10mA
120 nC @ 20 V
2250 pF @ 1000 V
+25V, -10V
-
277W (Tc)
125mOhm @ 28A, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
MCG30N03-TP
Micro Commercial Co

MOSFET N-CH 30V 30A DFN3030

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3030
  • Package / Case: 8-PowerVDFN
패키지: -
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MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
2.3V @ 250µA
15 nC @ 10 V
1490 pF @ 15 V
±20V
-
25W
9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN3030
8-PowerVDFN
NTMFS4C808NAT3G
onsemi

TRENCH 6 30V NCH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: -
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MOSFET (Metal Oxide)
30 V
9A (Ta), 52A (Tc)
4.5V, 10V
2.1V @ 250µA
18.2 nC @ 10 V
1670 pF @ 15 V
±20V
-
760mW (Ta), 25.5W (Tc)
4.8mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads