이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 10.3A TO-263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고534,000 |
|
MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | ±20V | - | 50W (Tc) | 154 mOhm @ 8.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 800V 190MA SOT-223
|
패키지: TO-261-4, TO-261AA |
재고7,168 |
|
MOSFET (Metal Oxide) | 800V | 190mA (Ta) | 10V | 4V @ 1mA | - | 230pF @ 25V | ±20V | - | 1.8W (Ta) | 20 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고927,024 |
|
MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 5.5V @ 250µA | 43nC @ 10V | 900pF @ 25V | ±30V | - | 110W (Tc) | 125 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 45A TO220AB
|
패키지: TO-220-3 |
재고7,744 |
|
MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 70nC @ 10V | 2730pF @ 25V | ±10V | - | 88W (Tc) | 13 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 7.5A 1212-8
|
패키지: PowerPAK? 1212-8 |
재고14,640 |
|
MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 4.5V | 1V @ 300µA | 41nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 19 mOhm @ 11.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Vishay Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고230,412 |
|
MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4.5V, 10V | 800mV @ 250µA (Min) | 7nC @ 10V | 215pF @ 15V | ±20V | - | 700mW (Ta) | 50 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 2.7A 4-MICROFOOT
|
패키지: 4-XFBGA |
재고7,424 |
|
MOSFET (Metal Oxide) | 20V | 2.7A (Tc) | 1.5V, 4.5V | 800mV @ 250µA | 10nC @ 4.5V | 580pF @ 10V | ±8V | - | 900mW (Tc) | 95 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-MICRO FOOT? (0.8x0.8) | 4-XFBGA |
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Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고7,344 |
|
MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | ±20V | - | 200W (Tc) | 8 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 60A TO-220
|
패키지: TO-220-3 |
재고11,508 |
|
MOSFET (Metal Oxide) | 120V | 60A (Tc) | 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | ±20V | - | 98W (Tc) | 13.8 mOhm @ 16A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 25.5A 131M
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고2,624 |
|
MOSFET (Metal Oxide) | 250V | 25.5A (Tc) | 10V | 5V @ 250µA | 49nC @ 10V | 1800pF @ 25V | ±30V | - | 417W (Tc) | 131 mOhm @ 25.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고196,176 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 30V 4.5A SC70-6
|
패키지: PowerPAK? SC-70-6 |
재고360,012 |
|
MOSFET (Metal Oxide) | 30V | 4.5A (Tc) | 2.5V, 10V | 1.6V @ 250µA | 24nC @ 10V | 830pF @ 15V | ±12V | - | 3.4W (Ta), 17.9W (Tc) | 36 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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ON Semiconductor |
MOSFET N-CH 60V 9A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고1,293,144 |
|
MOSFET (Metal Oxide) | 60V | 9A (Ta) | 10V | 4V @ 250µA | 15nC @ 10V | 280pF @ 25V | ±20V | - | 1.5W (Ta), 28.8W (Tj) | 150 mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 142A TO-220AB
|
패키지: TO-220-3 |
재고56,190 |
|
MOSFET (Metal Oxide) | 75V | 142A (Tc) | 10V | 4V @ 250µA | 320nC @ 10V | 7750pF @ 25V | ±20V | - | 380W (Tc) | 7.5 mOhm @ 85A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Central Semiconductor Corp |
MOSFET N-CH 40V 6A SOT-89
|
패키지: TO-243AA |
재고19,338 |
|
MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 3V @ 250µA | 12nC @ 10V | 730pF @ 20V | 20V | - | 1.2W (Ta) | 31 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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Vishay Siliconix |
MOSFET N-CH 30V 16.5A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고314,016 |
|
MOSFET (Metal Oxide) | 30V | 16.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 35nC @ 10V | 1525pF @ 15V | ±20V | - | 2.5W (Ta), 4.45W (Tc) | 9 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 40V 14A TO-252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고448,212 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 56nC @ 10V | 2400pF @ 20V | ±20V | - | 3.1W (Ta), 48.1W (Tc) | 8.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 320MA SOT523
|
패키지: - |
재고29,100 |
|
MOSFET (Metal Oxide) | 60 V | 320mA (Ta) | 5V, 10V | 2.5V @ 1mA | 392 nC @ 4.5 V | 30 pF @ 25 V | ±20V | - | 330mW (Ta) | 2Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Infineon Technologies |
MOSFET N-CH 100V TO247AC
|
패키지: - |
재고1,008 |
|
MOSFET (Metal Oxide) | 100 V | 203A (Tc) | 6V, 10V | 3.8V @ 278µA | 210 nC @ 10 V | 12020 pF @ 50 V | ±20V | - | 3.8W (Ta), 341W (Tc) | 1.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 2.5A SOT23 T&R
|
패키지: - |
재고42,720 |
|
MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 3.1 nC @ 4.5 V | 254 pF @ 25 V | ±20V | - | 650mW (Ta) | 95mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
PCH 4V DRIVE SERIES
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
PCH 4V DRIVE SERIES
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 60V 16A/64.6A 8DFN
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 16A (Ta), 64.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 37.5 nC @ 10 V | 2130 pF @ 30 V | ±20V | - | 900mW (Tc) | 5.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 (Type B) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO263-3
|
패키지: - |
재고5,790 |
|
MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 3.9V @ 1mA | 177 nC @ 10 V | 2300 pF @ 100 V | ±20V | - | 227W (Tc) | 290mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 8.9A (Ta), 49A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 45.8 nC @ 10 V | 2064 pF @ 20 V | ±20V | - | 1.6W (Ta) | 25mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Diodes Incorporated |
DIODE
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | 10V | 1.5V @ 250µA | - | 50 pF @ 10 V | ±20V | - | 200mW (Ta) | 3.5Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 25A 8WPAK
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 25A (Ta) | - | - | 6.8 nC @ 10 V | 1010 pF @ 10 V | - | - | 30W (Tc) | 11.1mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK (3) | 8-PowerWDFN |
||
onsemi |
MOSFET N-CH 80V 8.1A/30A 8WDFN
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 8.1A (Ta), 30A (Tc) | 4.5V, 10V | 2V @ 30µA | 12 nC @ 10 V | 610 pF @ 40 V | ±20V | - | 3.1W (Ta), 42W (Tc) | 20mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 800V 4A IPAK
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 5V @ 100µA | 5 nC @ 10 V | 177 pF @ 100 V | ±30V | - | 60W (Tc) | 1.75Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET N-CH 20V 3.5A SOT323 T&R
|
패키지: - |
재고30,000 |
|
MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 1.8V, 10V | 1.2V @ 250µA | 7.7 nC @ 10 V | 281 pF @ 10 V | ±12V | - | 500mW (Ta) | 42mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |