페이지 880 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품

IRLR7843TR

Infineon Technologies

MOSFET N-CH 30V 161A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고30,000

MOSFET (Metal Oxide)

30V

161A (Tc)

4.5V, 10V

2.3V @ 250µA

50nC @ 4.5V

4380pF @ 15V

±20V

-

140W (Tc)

3.3 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

STD12N10T4G

ON Semiconductor

MOSFET N-CH SPCL 100V DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,000

-

BUK654R0-75C,127

NXP

MOSFET N-CH 75V 120A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고5,712

MOSFET (Metal Oxide)

75V

120A (Tc)

4.5V, 10V

2.8V @ 1mA

234nC @ 10V

15450pF @ 25V

±16V

-

306W (Tc)

4.2 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

SIA443DJ-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 9A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Single
Package / Case: PowerPAK? SC-70-6

패키지: PowerPAK? SC-70-6

재고6,288

MOSFET (Metal Oxide)

20V

9A (Tc)

1.8V, 4.5V

1V @ 250µA

25nC @ 8V

750pF @ 10V

±8V

-

3.3W (Ta), 15W (Tc)

45 mOhm @ 4.7A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Single

PowerPAK? SC-70-6

FCU7N60TU

Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고5,632

MOSFET (Metal Oxide)

600V

7A (Tc)

10V

5V @ 250µA

30nC @ 10V

920pF @ 25V

±30V

-

83W (Tc)

600 mOhm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

STP30NM60N

STMicroelectronics

MOSFET N-CH 600V 25A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고7,568

MOSFET (Metal Oxide)

600V

25A (Tc)

10V

4V @ 250µA

91nC @ 10V

2700pF @ 50V

±30V

-

190W (Tc)

130 mOhm @ 12.5A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

STP3HNK90Z

STMicroelectronics

MOSFET N-CH 800V 3A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고6,512

MOSFET (Metal Oxide)

800V

3A (Tc)

10V

4.5V @ 50µA

35nC @ 10V

690pF @ 25V

±30V

-

90W (Tc)

4.2 Ohm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRLU9343PBF

Infineon Technologies

MOSFET P-CH 55V 20A I-PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고184,692

MOSFET (Metal Oxide)

55V

20A (Tc)

-

1V @ 250µA

47nC @ 10V

660pF @ 50V

-

105 mOhm @ 3.4A, 10V

-

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

IPW80R360P7XKSA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고7,344

MOSFET (Metal Oxide)

800V

13A (Tc)

10V

3.5V @ 280µA

30nC @ 10V

930pF @ 500V

±20V

-

84W (Tc)

360 mOhm @ 5.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

PSMN057-200P,127

Nexperia USA Inc.

MOSFET N-CH 200V 39A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 57 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고4,544

MOSFET (Metal Oxide)

200V

39A (Tc)

10V

4V @ 1mA

96nC @ 10V

3750pF @ 25V

±20V

-

250W (Tc)

57 mOhm @ 17A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

CSD18543Q3A

Texas Instruments

60V N CH MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-VSON (3.3x3.3)
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고7,168

-

4.5V, 10V

-

±20V

-

Surface Mount

8-VSON (3.3x3.3)

8-PowerVDFN

STL150N3LLH6

STMicroelectronics

MOSFET NCH 30V 150A POWERFLAT5X6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 16.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat? (6x5)
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고74,616

MOSFET (Metal Oxide)

30V

150A (Tc)

4.5V, 10V

1V @ 250µA

40nC @ 4.5V

4040pF @ 25V

±20V

-

80W (Tc)

2.4 mOhm @ 16.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerFlat? (6x5)

8-PowerVDFN

SPD50N03S2L06T

Infineon Technologies

MOSFET N-CH 30V 50A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,176

MOSFET (Metal Oxide)

30V

50A (Tc)

4.5V, 10V

2V @ 85µA

68nC @ 10V

2530pF @ 25V

±20V

-

136W (Tc)

6.4 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

FDMC6675BZ

Fairchild/ON Semiconductor

MOSFET P-CH 30V 9.5A POWER33

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-MLP (3.3x3.3)
Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

재고137,796

MOSFET (Metal Oxide)

30V

9.5A (Ta), 20A (Tc)

4.5V, 10V

3V @ 250µA

65nC @ 10V

2865pF @ 15V

±25V

-

2.3W (Ta), 36W (Tc)

14.4 mOhm @ 9.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-MLP (3.3x3.3)

8-PowerWDFN

IPP60R199CPXKSA1

Infineon Technologies

MOSFET N-CH 650V 16A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고8,196

MOSFET (Metal Oxide)

650V

16A (Tc)

10V

3.5V @ 660µA

43nC @ 10V

1520pF @ 100V

±20V

-

139W (Tc)

199 mOhm @ 9.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

FDD390N15A

Fairchild/ON Semiconductor

MOSFET N-CH 150V 26A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,696

MOSFET (Metal Oxide)

150V

26A (Tc)

10V

4V @ 250µA

18.6nC @ 10V

1285pF @ 75V

±20V

-

63W (Tc)

40 mOhm @ 26A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

AON7528

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 45A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3x3)
Package / Case: 8-PowerSMD, Flat Leads

패키지: 8-PowerSMD, Flat Leads

재고6,576

MOSFET (Metal Oxide)

30V

45A (Ta), 50A (Tc)

4.5V, 10V

2.2V @ 250µA

60nC @ 10V

2895pF @ 15V

±20V

-

6.2W (Ta), 83W (Tc)

2 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (3x3)

8-PowerSMD, Flat Leads

G3R40MT12J-TR

GeneSiC Semiconductor

1200V 40M TO-263-7 G3R SIC MOSFE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
Vgs (Max): +22V, -10V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

재고2,070

SiC (Silicon Carbide Junction Transistor)

1200 V

66A (Tc)

15V, 18V

2.7V @ 18mA

88 nC @ 15 V

2897 pF @ 800 V

+22V, -10V

-

330W (Tc)

45mOhm @ 35A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

NP88N055MHE-S18-AY

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

BUK9Y2R8-40HX

Nexperia USA Inc.

BUK9Y2R8-40H/SOT669/LFPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +16V, -10V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

120A (Tj)

-

+16V, -10V

-

SIDR170DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 23.2A/95A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8DC
Package / Case: PowerPAK® SO-8

패키지: -

재고27,789

MOSFET (Metal Oxide)

100 V

23.2A (Ta), 95A (Tc)

4.5V, 10V

2.5V @ 250µA

140 nC @ 10 V

6195 pF @ 50 V

±20V

-

6.25W (Ta), 125W (Tc)

4.8mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SO-8DC

PowerPAK® SO-8

DMT10H9M9LK3-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

AONS36303

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 5X6 8DFN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

2SK3430-02-S6-AZ

Renesas Electronics Corporation

TRANSISTOR

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

NTMFS6H852NT1G

onsemi

TRENCH 8 80V NFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

패키지: -

재고4,500

MOSFET (Metal Oxide)

80 V

10A (Ta), 40A (Tc)

6V, 10V

4V @ 45µA

13 nC @ 10 V

760 pF @ 40 V

±20V

-

3.6W (Ta), 54W (Tc)

14.2mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

SSM3K341R-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET NCH 60V 6A SOT23F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

패키지: -

재고93,201

MOSFET (Metal Oxide)

60 V

6A (Ta)

4V, 10V

2.5V @ 100µA

9.3 nC @ 10 V

550 pF @ 10 V

±20V

-

1.2W (Ta)

36mOhm @ 5A, 10V

175°C

Surface Mount

SOT-23F

SOT-23-3 Flat Leads

IRL520PBF-BE3

Vishay Siliconix

MOSFET N-CH 100V 9.2A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: -

재고3,732

MOSFET (Metal Oxide)

100 V

9.2A (Tc)

-

2V @ 250µA

12 nC @ 5 V

490 pF @ 25 V

±10V

-

60W (Tc)

270mOhm @ 5.5A, 5V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

DMTH10H025LPS-13

Diodes Incorporated

MOSFET BVDSS: 61V-100V POWERDI50

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN

패키지: -

Request a Quote

MOSFET (Metal Oxide)

100 V

9.3A (Ta), 45A (Tc)

6V, 10V

3V @ 250µA

21 nC @ 10 V

1477 pF @ 50 V

±20V

-

3.2W (Ta), 79W (Tc)

23mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerDI5060-8

8-PowerTDFN

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR7843TR	Infineon Technologies	MOSFET N-CH 30V 161A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고30,000	MOSFET (Metal Oxide)	30V	161A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4380pF @ 15V	±20V	-	140W (Tc)	3.3 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD12N10T4G	ON Semiconductor	MOSFET N-CH SPCL 100V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK654R0-75C,127	NXP	MOSFET N-CH 75V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고5,712	MOSFET (Metal Oxide)	75V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	234nC @ 10V	15450pF @ 25V	±16V	-	306W (Tc)	4.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIA443DJ-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 9A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	패키지: PowerPAK? SC-70-6	재고6,288	MOSFET (Metal Oxide)	20V	9A (Tc)	1.8V, 4.5V	1V @ 250µA	25nC @ 8V	750pF @ 10V	±8V	-	3.3W (Ta), 15W (Tc)	45 mOhm @ 4.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
FCU7N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고5,632	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	83W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP30NM60N	STMicroelectronics	MOSFET N-CH 600V 25A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고7,568	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	91nC @ 10V	2700pF @ 50V	±30V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP3HNK90Z	STMicroelectronics	MOSFET N-CH 800V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고6,512	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	690pF @ 25V	±30V	-	90W (Tc)	4.2 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLU9343PBF	Infineon Technologies	MOSFET P-CH 55V 20A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고184,692	MOSFET (Metal Oxide)	55V	20A (Tc)	-	1V @ 250µA	47nC @ 10V	660pF @ 50V	-	-	-	105 mOhm @ 3.4A, 10V	-	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IPW80R360P7XKSA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 84W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고7,344	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	3.5V @ 280µA	30nC @ 10V	930pF @ 500V	±20V	-	84W (Tc)	360 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
PSMN057-200P,127	Nexperia USA Inc.	MOSFET N-CH 200V 39A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 57 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고4,544	MOSFET (Metal Oxide)	200V	39A (Tc)	10V	4V @ 1mA	96nC @ 10V	3750pF @ 25V	±20V	-	250W (Tc)	57 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
CSD18543Q3A	Texas Instruments	60V N CH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고7,168	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	Surface Mount	8-VSON (3.3x3.3)	8-PowerVDFN
STL150N3LLH6	STMicroelectronics	MOSFET NCH 30V 150A POWERFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고74,616	MOSFET (Metal Oxide)	30V	150A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4040pF @ 25V	±20V	-	80W (Tc)	2.4 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
SPD50N03S2L06T	Infineon Technologies	MOSFET N-CH 30V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,176	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 85µA	68nC @ 10V	2530pF @ 25V	±20V	-	136W (Tc)	6.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC6675BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 9.5A POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	패키지: 8-PowerWDFN	재고137,796	MOSFET (Metal Oxide)	30V	9.5A (Ta), 20A (Tc)	4.5V, 10V	3V @ 250µA	65nC @ 10V	2865pF @ 15V	±25V	-	2.3W (Ta), 36W (Tc)	14.4 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
IPP60R199CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 16A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고8,196	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	3.5V @ 660µA	43nC @ 10V	1520pF @ 100V	±20V	-	139W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FDD390N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 26A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,696	MOSFET (Metal Oxide)	150V	26A (Tc)	10V	4V @ 250µA	18.6nC @ 10V	1285pF @ 75V	±20V	-	63W (Tc)	40 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
AON7528	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 45A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	패키지: 8-PowerSMD, Flat Leads	재고6,576	MOSFET (Metal Oxide)	30V	45A (Ta), 50A (Tc)	4.5V, 10V	2.2V @ 250µA	60nC @ 10V	2895pF @ 15V	±20V	-	6.2W (Ta), 83W (Tc)	2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
G3R40MT12J-TR	GeneSiC Semiconductor	1200V 40M TO-263-7 G3R SIC MOSFE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 2.7V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	재고2,070	SiC (Silicon Carbide Junction Transistor)	1200 V	66A (Tc)	15V, 18V	2.7V @ 18mA	88 nC @ 15 V	2897 pF @ 800 V	+22V, -10V	-	330W (Tc)	45mOhm @ 35A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NP88N055MHE-S18-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK9Y2R8-40HX	Nexperia USA Inc.	BUK9Y2R8-40H/SOT669/LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +16V, -10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	120A (Tj)	-	-	-	-	+16V, -10V	-	-	-	-	-	-	-
SIDR170DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 100V 23.2A/95A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	패키지: -	재고27,789	MOSFET (Metal Oxide)	100 V	23.2A (Ta), 95A (Tc)	4.5V, 10V	2.5V @ 250µA	140 nC @ 10 V	6195 pF @ 50 V	±20V	-	6.25W (Ta), 125W (Tc)	4.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
DMT10H9M9LK3-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V TO252 T&R FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS36303	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 5X6 8DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3430-02-S6-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMFS6H852NT1G	onsemi	TRENCH 8 80V NFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	패키지: -	재고4,500	MOSFET (Metal Oxide)	80 V	10A (Ta), 40A (Tc)	6V, 10V	4V @ 45µA	13 nC @ 10 V	760 pF @ 40 V	±20V	-	3.6W (Ta), 54W (Tc)	14.2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SSM3K341R-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET NCH 60V 6A SOT23F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	패키지: -	재고93,201	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	2.5V @ 100µA	9.3 nC @ 10 V	550 pF @ 10 V	±20V	-	1.2W (Ta)	36mOhm @ 5A, 10V	175°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IRL520PBF-BE3	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: -	재고3,732	MOSFET (Metal Oxide)	100 V	9.2A (Tc)	-	2V @ 250µA	12 nC @ 5 V	490 pF @ 25 V	±10V	-	60W (Tc)	270mOhm @ 5.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMTH10H025LPS-13	Diodes Incorporated	MOSFET BVDSS: 61V-100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	9.3A (Ta), 45A (Tc)	6V, 10V	3V @ 250µA	21 nC @ 10 V	1477 pF @ 50 V	±20V	-	3.2W (Ta), 79W (Tc)	23mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN