트랜지스터 - FET, MOSFET - 단일

IRF7749L2TR1PBF

Infineon Technologies

MOSFET N-CH 60V 375A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET L8
• Package / Case: DirectFET? Isometric L8

패키지: DirectFET? Isometric L8

BSS139 E6906

Infineon Technologies

MOSFET N-CH 250V 100MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 56µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

AOT10T60L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

패키지: TO-220-3

2SK3342(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4.5A PW-MOLD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PW-MOLD
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

ZVP3306ASTOB

Diodes Incorporated

MOSFET P-CH 60V 0.16A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

패키지: E-Line-3

2N7002_L99Z

Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23 (TO-236AB)
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

IPC60R099C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

APT30M40JVR

Microsemi Corporation

MOSFET N-CH 300V 70A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 70A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 450W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

IXTQ75N10P

IXYS

MOSFET N-CH 100V 75A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

TSM085N03PQ33 RGG

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 817pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (3x3)
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

IXTP110N055T2

IXYS

MOSFET N-CH 55V 110A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

STFH10N60M2

STMicroelectronics

MOSFET NCH 600V 7.5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

IRF7821TRPBF

Infineon Technologies

MOSFET N-CH 30V 13.6A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 155°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IPP50R140CPXKSA1

Infineon Technologies

MOSFET N-CH 500V 23A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 930µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 192W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

패키지: TO-220-3

SI3443DDV-T1-GE3

Vishay Siliconix

MOSFET P-CHAN 20V TSOP6S

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

SPD30P06P G

Infineon Technologies

MOSFET P-CH 60V 30A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.7mA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

PMV27UPER

Nexperia USA Inc.

MOSFET P-CH 20V 4.5A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 490mW (Ta)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

SSM3K37FS,LF

Toshiba Semiconductor and Storage

MOSFET NCH 20V 200MA SSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
• Operating Temperature: 150°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: SSM
• Package / Case: SC-75, SOT-416

패키지: SC-75, SOT-416

DMG2305UX-7

Diodes Incorporated

MOSFET P-CH 20V 4.2A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 4.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

AOT160A60L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

패키지: -

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DMTH4005SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 20.9A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

패키지: -

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PMN40SNAX

Nexperia USA Inc.

MOSFET N-CH 60V 4.7A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W
• Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

패키지: -

RS1E321GNTB1

Rohm Semiconductor

MOSFET N-CH 30V 32A/80A 8HSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

패키지: -

PJL9436A1_R2_00001

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 8.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

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IRFR220

Harris Corporation

MOSFET N-CH 200V 4.6A TO252AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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IPP014N06NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 246µA
• Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-U05
• Package / Case: TO-220-3

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PJA3436-AU_R1_000A1

Panjit International Inc.

SOT-23, MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

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SSFL0956

Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 4A, 100V,

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Tc)
• Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

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