페이지 899 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-841
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  899/1,502
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRLBL1304
Infineon Technologies

MOSFET N-CH 40V 185A SUPER D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 110A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SUPER D2-PAK
  • Package / Case: Super D2-Pak
패키지: Super D2-Pak
재고3,360
MOSFET (Metal Oxide)
40V
185A (Tc)
4.5V, 10V
1V @ 250µA
140nC @ 4.5V
7660pF @ 25V
±16V
-
300W (Tc)
4.5 mOhm @ 110A, 10V
-
Surface Mount
SUPER D2-PAK
Super D2-Pak
AOU3N60_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.25A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,200
MOSFET (Metal Oxide)
600V
2.5A (Tc)
10V
4.5V @ 250µA
12nC @ 10V
370pF @ 25V
±30V
-
56.8W (Tc)
3.5 Ohm @ 1.25A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot NTP5411NG
ON Semiconductor

MOSFET N-CH 60V 80A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고104,292
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 250µA
130nC @ 10V
4500pF @ 25V
±20V
-
166W (Tc)
10 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
APT60M75JVFR
Microsemi Corporation

MOSFET N-CH 600V 62A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 62A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1050nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고7,856
MOSFET (Metal Oxide)
600V
62A
10V
4V @ 5mA
1050nC @ 10V
19800pF @ 25V
±30V
-
700W (Tc)
75 mOhm @ 31A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
hot NTMS7N03R2
ON Semiconductor

MOSFET N-CH 30V 4.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고46,464
MOSFET (Metal Oxide)
30V
4.8A (Ta)
4.5V, 10V
3V @ 250µA
43nC @ 10V
1190pF @ 25V
±20V
-
800mW (Ta)
23 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
APT50M50JLL
Microsemi Corporation

MOSFET N-CH 500V 71A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 71A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고4,576
MOSFET (Metal Oxide)
500V
71A
10V
5V @ 5mA
200nC @ 10V
10550pF @ 25V
±30V
-
595W (Tc)
50 mOhm @ 35.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
IXFT32N50Q
IXYS

MOSFET N-CH 500V 32A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,648
MOSFET (Metal Oxide)
500V
32A (Tc)
10V
4.5V @ 4mA
190nC @ 10V
4925pF @ 25V
±20V
-
360W (Tc)
160 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot FDB8860
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12585pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 254W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고15,120
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
3V @ 250µA
214nC @ 10V
12585pF @ 15V
±20V
-
254W (Tc)
2.3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTY2R4N50P
IXYS

MOSFET N-CH 500V 2.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.75 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,192
MOSFET (Metal Oxide)
500V
2.4A (Tc)
10V
5.5V @ 25µA
6.1nC @ 10V
240pF @ 25V
±30V
-
55W (Tc)
3.75 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
DMPH3010LK3Q-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6807pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,952
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
2.1V @ 250µA
139nC @ 10V
6807pF @ 15V
±20V
-
3.9W (Ta)
7.5 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
BUK98150-55/CUF
Nexperia USA Inc.

MOSFET N-CH 55V 5.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고3,296
MOSFET (Metal Oxide)
55V
5.5A (Tc)
5V
2V @ 1mA
-
330pF @ 25V
±10V
-
8.3W (Tc)
150 mOhm @ 5A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot STP9NK80Z
STMicroelectronics

MOSFET N-CH 800V 7.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,672
MOSFET (Metal Oxide)
800V
7.5A (Tc)
10V
4.5V @ 100µA
84nC @ 10V
1900pF @ 25V
±30V
-
150W (Tc)
1.2 Ohm @ 3.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK9Y14-40B,115
Nexperia USA Inc.

MOSFET N-CH 40V 56A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고5,440
MOSFET (Metal Oxide)
40V
56A (Tc)
5V
2V @ 1mA
21nC @ 5V
1800pF @ 25V
±15V
-
85W (Tc)
11 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
SI8473EDB-T1-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-XFBGA, CSPBGA
패키지: 4-XFBGA, CSPBGA
재고3,968
MOSFET (Metal Oxide)
20V
-
2.5V, 4.5V
1.5V @ 250µA
-
-
±12V
-
1.1W (Ta), 2.7W (Tc)
41 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-XFBGA, CSPBGA
IXFP22N65X2
IXYS

MOSFET N-CH 650V 22A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,392
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
5.5V @ 1.5mA
38nC @ 10V
2310pF @ 25V
±30V
-
390W (Tc)
160 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
SQJ476EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V 23A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고3,088
MOSFET (Metal Oxide)
100V
23A (Tc)
4.5V, 10V
2.5V @ 250µA
20nC @ 10V
700pF @ 25V
±20V
-
45W (Tc)
38 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
TPH3206LSB
Transphorm

MOSFET N-CH GANFET 650V 16A PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
패키지: 3-PowerDFN
재고8,580
GaNFET (Gallium Nitride)
650V
16A (Tc)
8V
2.6V @ 500µA
6.2nC @ 4.5V
720pF @ 480V
±18V
-
81W (Tc)
180 mOhm @ 10A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (8x8)
3-PowerDFN
IRLIZ44NPBF
Infineon Technologies

MOSFET N-CH 55V 30A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고24,864
MOSFET (Metal Oxide)
55V
30A (Tc)
4V, 10V
2V @ 250µA
48nC @ 5V
1700pF @ 25V
±16V
-
45W (Tc)
22 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
hot FDS2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고500,760
MOSFET (Metal Oxide)
150V
4.9A (Tc)
6V, 10V
4V @ 250µA
38nC @ 10V
2050pF @ 25V
±20V
-
2.5W (Ta)
47 mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
2SK3436-TL-E
Sanyo

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PJQ4404P_R2_00001
Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333-8
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
15A (Ta), 60A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 4.5 V
1323 pF @ 25 V
±20V
-
2W (Ta), 31W (Tc)
6mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN3333-8
8-PowerVDFN
MCTL300N10YHE3-TP
Micro Commercial Co

N-CHANNEL MOSFET,TOLL-8L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10051 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.55mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL-8L
  • Package / Case: 8-PowerSFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
300A (Tc)
10V
3.9V @ 250µA
166 nC @ 10 V
10051 pF @ 50 V
±20V
-
375W (Tj)
1.55mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TOLL-8L
8-PowerSFN
FDB3672-F085
onsemi

MOSFET N-CH 100V 7.2A/44A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고903
MOSFET (Metal Oxide)
100 V
7.2A (Ta), 44A (Tc)
6V, 10V
4V @ 250µA
31 nC @ 10 V
1710 pF @ 25 V
±20V
-
120W (Tc)
28mOhm @ 44A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SJ584LS-CB11
onsemi

PCH 10V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP31D7LTQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT523 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
360mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.36 nC @ 4.5 V
19 pF @ 15 V
±20V
-
260mW (Ta)
900mOhm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMP6018LPS-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
패키지: -
재고7,500
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
13.7 nC @ 10 V
3505 pF @ 30 V
±20V
-
2.6W (Ta), 113W (Tc)
18mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
SSFN6907
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -12A, -60V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PPAK (3.1x3.05)
  • Package / Case: 8-PowerVDFN
패키지: -
재고17,025
MOSFET (Metal Oxide)
60 V
14A (Tc)
4.5V, 10V
2.2V @ 250µA
23 nC @ 10 V
1260 pF @ 30 V
±20V
-
33.8W (Tc)
68mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PPAK (3.1x3.05)
8-PowerVDFN
IRFW550ATM
Fairchild Semiconductor

40A, 100V, 0.04OHM, N-CHANNEL MO

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-