페이지 921 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품

IRF7526D1TR

Infineon Technologies

MOSFET P-CH 30V 2A MICRO8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Micro8?
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고472,500

MOSFET (Metal Oxide)

30V

2A (Ta)

4.5V, 10V

1V @ 250µA

11nC @ 10V

180pF @ 25V

±20V

Schottky Diode (Isolated)

1.25W (Ta)

200 mOhm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

Micro8?

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

DMP3025LK3-13-01

Diodes Incorporated

MOSFET P-CH 30V 10.6A TO252

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,408

-

-55°C ~ 150°C (TJ)

Surface Mount

-

STS25NH3LL

STMicroelectronics

MOSFET N-CH 30V 25A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고268,116

MOSFET (Metal Oxide)

30V

25A (Tc)

4.5V, 10V

1V @ 250µA

40nC @ 4.5V

4450pF @ 25V

±18V

-

3.2W (Tc)

3.5 mOhm @ 12.5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IXFN32N60

IXYS

MOSFET N-CH 600V 32A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 32A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고6,048

MOSFET (Metal Oxide)

600V

32A

10V

4.5V @ 8mA

325nC @ 10V

9000pF @ 25V

±20V

-

520W (Tc)

250 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

EPC2010CENGR

EPC

TRANS GAN 200V 22A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (7-Solder Bar)
Package / Case: Die

패키지: Die

재고4,864

GaNFET (Gallium Nitride)

200V

22A (Ta)

5V

2.5V @ 3mA

3.7nC @ 5V

380pF @ 100V

+6V, -4V

-

25 mOhm @ 12A, 5V

-40°C ~ 150°C (TJ)

Surface Mount

Die Outline (7-Solder Bar)

Die

NTMFS5H400NLT3G

ON Semiconductor

MOSFET N-CH 40V 46A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

재고3,232

MOSFET (Metal Oxide)

40V

46A (Ta), 330A (Tc)

4.5V, 10V

2V @ 250µA

11nC @ 4.5V

7700pF @ 20V

±20V

-

3.3W (Ta), 160W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

STF18N60DM2

STMicroelectronics

MOSFET N-CH 600V 13A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 100V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 295 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고2,912

MOSFET (Metal Oxide)

600V

13A (Tc)

10V

5V @ 250µA

20nC @ 10V

800pF @ 100V

±25V

-

25W (Tc)

295 mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

BUK9Y38-100E,115

Nexperia USA Inc.

MOSFET N-CH 100V 30A LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2541pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 94.9W (Tc)
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

패키지: SC-100, SOT-669

재고4,336

MOSFET (Metal Oxide)

100V

30A (Tc)

5V, 10V

2.1V @ 1mA

21.6nC @ 5V

2541pF @ 25V

±10V

-

94.9W (Tc)

38 mOhm @ 5A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

IXFB40N110Q3

IXYS

MOSFET N-CH 1100V 40A PLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1100V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1560W (Tc)
Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264?
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고6,864

MOSFET (Metal Oxide)

1100V

40A (Tc)

10V

6.5V @ 8mA

300nC @ 10V

14000pF @ 25V

±30V

-

1560W (Tc)

260 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS264?

TO-264-3, TO-264AA

STB3N62K3

STMicroelectronics

MOSFET N-CH 620V 2.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 620V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,232

MOSFET (Metal Oxide)

620V

2.7A (Tc)

10V

4.5V @ 50µA

13nC @ 10V

385pF @ 25V

±30V

-

45W (Tc)

2.5 Ohm @ 1.4A, 10V

150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQD6N25TM

Fairchild/ON Semiconductor

MOSFET N-CH 250V 4.4A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고143,760

MOSFET (Metal Oxide)

250V

4.4A (Tc)

10V

5V @ 250µA

8.5nC @ 10V

300pF @ 25V

±30V

-

2.5W (Ta), 45W (Tc)

1 Ohm @ 2.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

DMP2123LQ-7

Diodes Incorporated

MOSFET P-CH 20V 3A SOT23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,528

MOSFET (Metal Oxide)

20V

3A (Ta)

2.5V, 4.5V

1.25V @ 250µA

7.3nC @ 4.5V

443pF @ 16V

±12V

-

1.4W (Ta)

72 mOhm @ 3.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

IPP60R160C6

Infineon Technologies

MOSFET N-CH 600V 23.8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고37,932

MOSFET (Metal Oxide)

600V

23.8A (Tc)

10V

3.5V @ 750µA

75nC @ 10V

1660pF @ 100V

±20V

-

176W (Tc)

160 mOhm @ 11.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

STP21N65M5

STMicroelectronics

MOSFET N-CH 650V 17A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고50,352

MOSFET (Metal Oxide)

650V

17A (Tc)

10V

5V @ 250µA

50nC @ 10V

1950pF @ 100V

±25V

-

125W (Tc)

190 mOhm @ 8.5A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

ZVP3310FTA

Diodes Incorporated

MOSFET P-CH 100V 0.075A SOT23-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,558,044

MOSFET (Metal Oxide)

100V

75mA (Ta)

10V

3.5V @ 1mA

-

50pF @ 25V

±20V

-

330mW (Ta)

20 Ohm @ 150mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

IXFX140N30P

IXYS

MOSFET N-CH 300V 140A PLUS 247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

패키지: TO-247-3

재고34,464

MOSFET (Metal Oxide)

300V

140A (Tc)

10V

5V @ 8mA

185nC @ 10V

14800pF @ 25V

±20V

-

1040W (Tc)

24 mOhm @ 70A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

SI1317DL-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 1.4A SC70

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.4A, 4.5V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

패키지: SC-70, SOT-323

재고549,096

MOSFET (Metal Oxide)

20V

1.4A (Tc)

1.8V, 4.5V

800mV @ 250µA

6.5nC @ 4.5V

272pF @ 10V

±8V

-

400mW (Ta), 500mW (Tc)

150 mOhm @ 1.4A, 4.5V

-50°C ~ 150°C (TJ)

Surface Mount

SOT-323

SC-70, SOT-323

AOWF095A60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO262F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34.5W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262F
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

패키지: -

Request a Quote

MOSFET (Metal Oxide)

600 V

38A (Tj)

10V

3V @ 250µA

78 nC @ 10 V

4010 pF @ 100 V

±20V

-

34.5W (Tc)

95mOhm @ 19A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-262F

TO-262-3 Long Leads, I2PAK, TO-262AA

PJMF360N60EC_T0_00001

Panjit International Inc.

600V SUPER JUNCTION MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB-F
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: -

재고6,000

MOSFET (Metal Oxide)

600 V

11A (Tc)

10V

4V @ 250µA

18.7 nC @ 10 V

735 pF @ 400 V

±30V

-

30W (Tc)

360mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ITO-220AB-F

TO-220-3 Full Pack, Isolated Tab

CP771-CXDM4060P-WN

Central Semiconductor Corp

MOSFET P-CH 40V 6A DIE

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

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MOSFET (Metal Oxide)

40 V

6A (Ta)

-

3V @ 250µA

6.5 nC @ 4.5 V

750 pF @ 25 V

±25V

-

65mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

Die

NTMFS4983NBFT1G

onsemi

MOSFET N-CH 30V 22A/106A 5DFN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

FDS8878-G

onsemi

MOSFET N-CH 30V 10.2A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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MOSFET (Metal Oxide)

30 V

10.2A (Ta)

4.5V, 10V

2.5V @ 250µA

26 nC @ 10 V

897 pF @ 15 V

±20V

-

2.5W (Ta)

14mOhm @ 10.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

DI040P04PT-AQ

Diotec Semiconductor

MOSFET, POWERQFN 3X3, -40V, -40A

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 22.7W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-QFN (3x3)
Package / Case: 8-PowerVDFN

패키지: -

재고14,970

MOSFET (Metal Oxide)

40 V

40A (Tc)

4.5V, 10V

2.5V @ 250µA

59 nC @ 10 V

3538 pF @ 20 V

±20V

-

22.7W (Tc)

15mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-QFN (3x3)

8-PowerVDFN

PSMQC074N10NS2_R2_00201

Panjit International Inc.

100V/ 7.4M/ EXCELLECT LOW FOM MO

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고18,000

-

AONS62530

Alpha & Omega Semiconductor Inc.

N

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

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MOSFET (Metal Oxide)

150 V

6.2A (Ta), 19A (Tc)

4.5V, 10V

2.7V @ 250µA

20 nC @ 10 V

675 pF @ 75 V

±20V

-

5W (Ta), 48W (Tc)

58mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

SI7120DN-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 6.3A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

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MOSFET (Metal Oxide)

60 V

6.3A (Ta)

-

3.5V @ 250µA

45 nC @ 10 V

-

19mOhm @ 10A, 10V

-

Surface Mount

PowerPAK® 1212-8

MCH3443-TL-E

onsemi

NCH 2.5V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

2SJ215-E

Renesas Electronics Corporation

P-CHANNEL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7526D1TR	Infineon Technologies	MOSFET P-CH 30V 2A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고472,500	MOSFET (Metal Oxide)	30V	2A (Ta)	4.5V, 10V	1V @ 250µA	11nC @ 10V	180pF @ 25V	±20V	Schottky Diode (Isolated)	1.25W (Ta)	200 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
DMP3025LK3-13-01	Diodes Incorporated	MOSFET P-CH 30V 10.6A TO252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	패키지: -	재고3,408	-	-	-	-	-	-	-	-	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	-	-
STS25NH3LL	STMicroelectronics	MOSFET N-CH 30V 25A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 3.2W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고268,116	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4450pF @ 25V	±18V	-	3.2W (Tc)	3.5 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXFN32N60	IXYS	MOSFET N-CH 600V 32A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고6,048	MOSFET (Metal Oxide)	600V	32A	10V	4.5V @ 8mA	325nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	250 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
EPC2010CENGR	EPC	TRANS GAN 200V 22A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (7-Solder Bar) Package / Case: Die	패키지: Die	재고4,864	GaNFET (Gallium Nitride)	200V	22A (Ta)	5V	2.5V @ 3mA	3.7nC @ 5V	380pF @ 100V	+6V, -4V	-	-	25 mOhm @ 12A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die Outline (7-Solder Bar)	Die
NTMFS5H400NLT3G	ON Semiconductor	MOSFET N-CH 40V 46A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	패키지: 8-PowerTDFN	재고3,232	MOSFET (Metal Oxide)	40V	46A (Ta), 330A (Tc)	4.5V, 10V	2V @ 250µA	11nC @ 4.5V	7700pF @ 20V	±20V	-	3.3W (Ta), 160W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STF18N60DM2	STMicroelectronics	MOSFET N-CH 600V 13A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고2,912	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	5V @ 250µA	20nC @ 10V	800pF @ 100V	±25V	-	25W (Tc)	295 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
BUK9Y38-100E,115	Nexperia USA Inc.	MOSFET N-CH 100V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2541pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 94.9W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	패키지: SC-100, SOT-669	재고4,336	MOSFET (Metal Oxide)	100V	30A (Tc)	5V, 10V	2.1V @ 1mA	21.6nC @ 5V	2541pF @ 25V	±10V	-	94.9W (Tc)	38 mOhm @ 5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IXFB40N110Q3	IXYS	MOSFET N-CH 1100V 40A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1560W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고6,864	MOSFET (Metal Oxide)	1100V	40A (Tc)	10V	6.5V @ 8mA	300nC @ 10V	14000pF @ 25V	±30V	-	1560W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
STB3N62K3	STMicroelectronics	MOSFET N-CH 620V 2.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,232	MOSFET (Metal Oxide)	620V	2.7A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	385pF @ 25V	±30V	-	45W (Tc)	2.5 Ohm @ 1.4A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD6N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고143,760	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP2123LQ-7	Diodes Incorporated	MOSFET P-CH 20V 3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,528	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	1.25V @ 250µA	7.3nC @ 4.5V	443pF @ 16V	±12V	-	1.4W (Ta)	72 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPP60R160C6	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고37,932	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	3.5V @ 750µA	75nC @ 10V	1660pF @ 100V	±20V	-	176W (Tc)	160 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
STP21N65M5	STMicroelectronics	MOSFET N-CH 650V 17A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고50,352	MOSFET (Metal Oxide)	650V	17A (Tc)	10V	5V @ 250µA	50nC @ 10V	1950pF @ 100V	±25V	-	125W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVP3310FTA	Diodes Incorporated	MOSFET P-CH 100V 0.075A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,558,044	MOSFET (Metal Oxide)	100V	75mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	330mW (Ta)	20 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IXFX140N30P	IXYS	MOSFET N-CH 300V 140A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	패키지: TO-247-3	재고34,464	MOSFET (Metal Oxide)	300V	140A (Tc)	10V	5V @ 8mA	185nC @ 10V	14800pF @ 25V	±20V	-	1040W (Tc)	24 mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
SI1317DL-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 1.4A SC70 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.4A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	패키지: SC-70, SOT-323	재고549,096	MOSFET (Metal Oxide)	20V	1.4A (Tc)	1.8V, 4.5V	800mV @ 250µA	6.5nC @ 4.5V	272pF @ 10V	±8V	-	400mW (Ta), 500mW (Tc)	150 mOhm @ 1.4A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
AOWF095A60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 38A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.5W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	38A (Tj)	10V	3V @ 250µA	78 nC @ 10 V	4010 pF @ 100 V	±20V	-	34.5W (Tc)	95mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Long Leads, I2PAK, TO-262AA
PJMF360N60EC_T0_00001	Panjit International Inc.	600V SUPER JUNCTION MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	재고6,000	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	4V @ 250µA	18.7 nC @ 10 V	735 pF @ 400 V	±30V	-	30W (Tc)	360mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
CP771-CXDM4060P-WN	Central Semiconductor Corp	MOSFET P-CH 40V 6A DIE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	Request a Quote	MOSFET (Metal Oxide)	40 V	6A (Ta)	-	3V @ 250µA	6.5 nC @ 4.5 V	750 pF @ 25 V	±25V	-	-	65mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
NTMFS4983NBFT1G	onsemi	MOSFET N-CH 30V 22A/106A 5DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDS8878-G	onsemi	MOSFET N-CH 30V 10.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10.2A (Ta)	4.5V, 10V	2.5V @ 250µA	26 nC @ 10 V	897 pF @ 15 V	±20V	-	2.5W (Ta)	14mOhm @ 10.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DI040P04PT-AQ	Diotec Semiconductor	MOSFET, POWERQFN 3X3, -40V, -40A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22.7W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	패키지: -	재고14,970	MOSFET (Metal Oxide)	40 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	59 nC @ 10 V	3538 pF @ 20 V	±20V	-	22.7W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
PSMQC074N10NS2_R2_00201	Panjit International Inc.	100V/ 7.4M/ EXCELLECT LOW FOM MO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고18,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS62530	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	6.2A (Ta), 19A (Tc)	4.5V, 10V	2.7V @ 250µA	20 nC @ 10 V	675 pF @ 75 V	±20V	-	5W (Ta), 48W (Tc)	58mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SI7120DN-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 6.3A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	패키지: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6.3A (Ta)	-	3.5V @ 250µA	45 nC @ 10 V	-	-	-	-	19mOhm @ 10A, 10V	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
MCH3443-TL-E	onsemi	NCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ215-E	Renesas Electronics Corporation	P-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-