페이지 938 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  938/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPB11N60S5ATMA1
Infineon Technologies

MOSFET N-CH 600V 11A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,000
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
5.5V @ 500µA
54nC @ 10V
1460pF @ 25V
±20V
-
125W (Tc)
380 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP50P03YDG-E1-AY
Renesas Electronics America

MOSFET P-CH 30V 50A 8HSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSON
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
패키지: 8-SMD, Flat Lead Exposed Pad
재고5,680
MOSFET (Metal Oxide)
30V
50A (Tc)
5V, 10V
2.5V @ 250µA
96nC @ 10V
3500pF @ 25V
±20V
-
1W (Ta), 102W (Tc)
8.4 mOhm @ 25A, 10V
175°C (TJ)
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
BUK9240-100A/C1,11
NXP

MOSFET N-CH 100V DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3072pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,624
MOSFET (Metal Oxide)
100V
33A (Tc)
4.5V, 10V
2V @ 1mA
-
3072pF @ 25V
±10V
-
114W (Tc)
38.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8A04-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 44A 8SOP ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고5,376
MOSFET (Metal Oxide)
30V
44A (Ta)
4.5V, 10V
2.3V @ 1mA
59nC @ 10V
5700pF @ 10V
±20V
-
-
3.2 mOhm @ 22A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
NTB5605PT4
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,288
MOSFET (Metal Oxide)
60V
18.5A (Ta)
5V
2V @ 250µA
22nC @ 5V
1190pF @ 25V
±20V
-
88W (Tc)
140 mOhm @ 8.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot MTP23P06VG
ON Semiconductor

MOSFET P-CH 60V 23A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고459,372
MOSFET (Metal Oxide)
60V
23A (Tc)
10V
4V @ 250µA
50nC @ 10V
1620pF @ 25V
±15V
-
90W (Tc)
120 mOhm @ 11.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPD40N03S4L08ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,096
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
2.2V @ 13µA
20nC @ 10V
1520pF @ 15V
±16V
-
42W (Tc)
8.3 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN36N110P
IXYS

MOSFET N-CH 1100V 36A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1100V
  • Current - Continuous Drain (Id) @ 25°C: 36A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고2,912
MOSFET (Metal Oxide)
1100V
36A
10V
6.5V @ 1mA
350nC @ 10V
23000pF @ 25V
±30V
-
1000W (Tc)
240 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IXTQ72N30T
IXYS

MOSFET N-CH 300V 72A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고7,584
MOSFET (Metal Oxide)
300V
72A (Tc)
-
-
-
-
-
-
-
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
AOT270L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 21.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10350pF @ 37.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,408
MOSFET (Metal Oxide)
75V
21.5A (Ta), 140A (Tc)
6V, 10V
3V @ 250µA
215nC @ 10V
10350pF @ 37.5V
±20V
-
2.1W (Ta), 500W (Tc)
2.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
IXFX64N60Q3
IXYS

MOSFET N-CH 600V 64A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,728
MOSFET (Metal Oxide)
600V
64A (Tc)
10V
6.5V @ 4mA
190nC @ 10V
9930pF @ 25V
±30V
-
1250W (Tc)
95 mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
APTM100UM45DAG
Microsemi Corporation

MOSFET N-CH 1000V 215A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 215A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
패키지: SP6
재고5,120
MOSFET (Metal Oxide)
1000V
215A
10V
5V @ 30mA
1602nC @ 10V
42700pF @ 25V
±30V
-
5000W (Tc)
52 mOhm @ 107.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
BUK768R1-100E,118
Nexperia USA Inc.

MOSFET N-CH 100V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고34,866
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 1mA
108nC @ 10V
7380pF @ 25V
±20V
-
263W (Tc)
8.1 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot R5016FNX
Rohm Semiconductor

MOSFET N-CH 500V 16A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 325 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
패키지: TO-220-2 Full Pack
재고44,376
MOSFET (Metal Oxide)
500V
16A (Ta)
10V
5V @ 1mA
46nC @ 10V
1700pF @ 25V
±30V
-
50W (Tc)
325 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot STP8NK80Z
STMicroelectronics

MOSFET N-CH 800V 6.2A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고331,548
MOSFET (Metal Oxide)
800V
6.2A (Tc)
10V
4.5V @ 100µA
46nC @ 10V
1320pF @ 25V
±30V
-
140W (Tc)
1.5 Ohm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQ2315ES-T1_GE3
Vishay Siliconix

MOSFET P-CHAN 12V SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고267,162
MOSFET (Metal Oxide)
12V
5A (Tc)
1.8V, 4.5V
1V @ 250µA
13nC @ 4.5V
870pF @ 4V
±8V
-
2W (Tc)
50 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SSM3K339R,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A SOT-23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
패키지: SOT-23-3 Flat Leads
재고334,788
MOSFET (Metal Oxide)
40V
2A (Ta)
1.8V, 8V
1.2V @ 1mA
1.1nC @ 4.2V
130pF @ 10V
±12V
-
1W (Ta)
185 mOhm @ 1A, 8V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
hot FQD16N25CTM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 16A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고18,660
MOSFET (Metal Oxide)
250V
16A (Tc)
10V
4V @ 250µA
53.5nC @ 10V
1080pF @ 25V
±30V
-
160W (Tc)
270 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
SI2304BDS-T1-BE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고23,436
MOSFET (Metal Oxide)
30 V
2.6A (Ta)
4.5V, 10V
3V @ 250µA
7 nC @ 10 V
225 pF @ 15 V
±20V
-
750mW (Ta)
70mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
MCH3411-TL-E
onsemi

NCH 2.5V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVD6416ANLT4G
onsemi

MOSFET N-CH 100V 19A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
19A (Tc)
4.5V, 10V
2.2V @ 250µA
40 nC @ 10 V
1000 pF @ 25 V
±20V
-
71W (Tc)
74mOhm @ 19A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
UF4C120070B7SSR
Qorvo

1200V/70MO,SICFET,G4,TO263-7

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMJS1D4N06CLTWG
onsemi

MOSFET N-CH 60V 39A/262A 8LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-LFPAK
  • Package / Case: SOT-1205, 8-LFPAK56
패키지: -
재고9,000
MOSFET (Metal Oxide)
60 V
39A (Ta), 262A (Tc)
4.5V, 10V
2V @ 280µA
103 nC @ 10 V
7430 pF @ 30 V
±20V
-
4W (Ta), 180W (Tc)
1.3mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
RX3G18BGNC16
Rohm Semiconductor

NCH 40V 180A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고8,709
MOSFET (Metal Oxide)
40 V
180A (Tc)
4.5V, 10V
2.5V @ 1mA
168 nC @ 10 V
12000 pF @ 20 V
±20V
-
125W (Tc)
1.64mOhm @ 90A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NTNS3A65PZT5GHW
onsemi

MOSFET P-CH 20V 281MA SOT883

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 281mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 155mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
  • Package / Case: 3-XFDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
281mA (Ta)
1.5V, 4.5V
1V @ 250µA
1.1 nC @ 4.5 V
44 pF @ 10 V
±8V
-
155mW (Ta)
1.3Ohm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-883 (XDFN3) (1x0.6)
3-XFDFN
PSMN6R7-40MLDX
Nexperia USA Inc.

MOSFET N-CH 40V 50A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
패키지: -
재고17,127
MOSFET (Metal Oxide)
40 V
50A (Ta)
4.5V, 10V
2.15V @ 1mA
31 nC @ 10 V
2071 pF @ 20 V
±20V
-
65W (Ta)
6.7mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
TK62Z60X-S1F
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
패키지: -
재고72
MOSFET (Metal Oxide)
600 V
61.8A (Ta)
10V
3.5V @ 3.1mA
135 nC @ 10 V
6500 pF @ 300 V
±30V
-
400W (Tc)
40mOhm @ 21A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
PMPB20SNAX
Nexperia USA Inc.

PMPB20SNA - 40V, N-CHANNEL TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.27W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
8A (Ta)
10V
4V @ 250µA
13 nC @ 10 V
460 pF @ 20 V
±20V
-
2.27W (Ta), 15W (Tc)
25mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad