페이지 972 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  972/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFR3412TRRPBF
Infineon Technologies

MOSFET N-CH 100V 48A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,176
MOSFET (Metal Oxide)
100V
48A (Tc)
10V
5.5V @ 250µA
89nC @ 10V
3430pF @ 25V
±20V
-
140W (Tc)
25 mOhm @ 29A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
EPC2025
EPC

TRANS GAN 300V 150MO BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고3,520
GaNFET (Gallium Nitride)
300V
4A (Ta)
5V
2.5V @ 1mA
-
194pF @ 240V
+6V, -4V
-
-
150 mOhm @ 3A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2818
EPC

TRANS GAN 150V 12A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고7,568
GaNFET (Gallium Nitride)
150V
12A (Ta)
5V
2.5V @ 3mA
7.5nC @ 5V
540pF @ 100V
+6V, -5V
-
-
25 mOhm @ 6A, 5V
-40°C ~ 125°C (TJ)
Surface Mount
Die
Die
hot SI5435BDC-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 4.3A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
패키지: 8-SMD, Flat Lead
재고136,596
MOSFET (Metal Oxide)
30V
4.3A (Ta)
4.5V, 10V
3V @ 250µA
24nC @ 10V
-
±20V
-
1.3W (Ta)
45 mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
hot IRFD110
Vishay Siliconix

MOSFET N-CH 100V 1A 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
패키지: 4-DIP (0.300", 7.62mm)
재고70,800
MOSFET (Metal Oxide)
100V
1A (Ta)
10V
4V @ 250µA
8.3nC @ 10V
180pF @ 25V
±20V
-
1.3W (Ta)
540 mOhm @ 600mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
BUK654R8-40C,127
NXP

MOSFET N-CH 40V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고5,840
MOSFET (Metal Oxide)
40V
100A (Tc)
4.5V, 10V
2.8V @ 1mA
88nC @ 10V
5200pF @ 25V
±16V
-
158W (Tc)
4.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STD85N3LH5
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
  • Vgs (Max): ±22V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고712,884
MOSFET (Metal Oxide)
30V
80A (Tc)
5V, 10V
2.5V @ 250µA
14nC @ 5V
1850pF @ 25V
±22V
-
70W (Tc)
5 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFP2907
Infineon Technologies

MOSFET N-CH 75V 90A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 470W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 125A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,672
MOSFET (Metal Oxide)
75V
90A (Tc)
10V
4V @ 250µA
620nC @ 10V
13000pF @ 25V
±20V
-
470W (Tc)
4.5 mOhm @ 125A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IPD90N10S406ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,992
MOSFET (Metal Oxide)
100V
90A (Tc)
10V
3.5V @ 90µA
68nC @ 10V
4870pF @ 25V
±20V
-
136W (Tc)
6.7 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTX120P20T
IXYS

MOSFET P-CH 200V 120A PLUS247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,168
MOSFET (Metal Oxide)
200V
120A (Tc)
-
4.5V @ 250µA
740nC @ 10V
73000pF @ 25V
-
-
-
30 mOhm @ 60A, 10V
-
Through Hole
PLUS247?-3
TO-247-3
NVMFS5C404NLT3G
ON Semiconductor

MOSFET N-CH 40V 49A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고7,296
MOSFET (Metal Oxide)
40V
49A (Ta), 352A (Tc)
4.5V, 10V
2V @ 250µA
181nC @ 10V
12168pF @ 25V
±20V
-
3.9W (Ta), 200W (Tc)
0.75 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
R5009ANJTL
Rohm Semiconductor

MOSFET N-CH 500V 9A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
패키지: SC-83
재고2,656
MOSFET (Metal Oxide)
500V
9A (Ta)
10V
4.5V @ 1mA
21nC @ 10V
650pF @ 25V
±30V
-
50W (Tc)
720 mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
NTTFS4H05NTWG
ON Semiconductor

MOSFET N-CH 25V 22.4A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.66W (Ta), 46.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고3,968
MOSFET (Metal Oxide)
25V
22.4A (Ta), 94A (Tc)
4.5V, 10V
2.1V @ 250µA
18.9nC @ 10V
1205pF @ 12V
±20V
-
2.66W (Ta), 46.3W (Tc)
3.3 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
IRFD214PBF
Vishay Siliconix

MOSFET N-CH 250V 450MA 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
패키지: 4-DIP (0.300", 7.62mm)
재고6,448
MOSFET (Metal Oxide)
250V
450mA (Ta)
10V
4V @ 250µA
8.2nC @ 10V
140pF @ 25V
±20V
-
1W (Ta)
2 Ohm @ 270mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
FK8V03020L
Panasonic Electronic Components

MOSFET N CH 33V 14A WMINI8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 2.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WMini8-F1
  • Package / Case: 8-SMD, Flat Lead
패키지: 8-SMD, Flat Lead
재고5,360
MOSFET (Metal Oxide)
33V
14A (Ta)
4.5V, 10V
3V @ 2.2mA
14nC @ 4.5V
1500pF @ 10V
±10V
-
1W (Ta)
4.6 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
WMini8-F1
8-SMD, Flat Lead
hot MTM861240LBF
Panasonic Electronic Components

MOSFET P-CH 20V 2A WSSMINI6-F1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSSMini6-F1
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고225,132
MOSFET (Metal Oxide)
20V
2A (Ta)
2.5V, 4V
1.3V @ 1mA
-
400pF @ 10V
±10V
-
540mW (Ta)
130 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
WSSMini6-F1
6-SMD, Flat Leads
hot IRFZ48VPBF
Infineon Technologies

MOSFET N-CH 60V 72A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고47,076
MOSFET (Metal Oxide)
60V
72A (Tc)
10V
4V @ 250µA
110nC @ 10V
1985pF @ 25V
±20V
-
150W (Tc)
12 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STS3P6F6
STMicroelectronics

MOSFET P-CH 60V 3A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,904
MOSFET (Metal Oxide)
60V
-
10V
4V @ 250µA
6.4nC @ 10V
340pF @ 48V
±20V
-
2.7W (Tc)
160 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
BSS138W-TP
Micro Commercial Co

N-CHANNEL MOSFET, SOT-323 PACKAG

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고5,088
MOSFET (Metal Oxide)
50V
220mA
10V
1.5V @ 1mA
-
27pF @ 25V
±20V
-
300mW
3.5 Ohm @ 220mA, 10V
-55°C ~ 155°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
CTLDM7120-M621H TR
Central Semiconductor Corp

MOSFET N-CH 20V 1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TLM621H
  • Package / Case: 6-XFDFN Exposed Pad
패키지: 6-XFDFN Exposed Pad
재고26,958
MOSFET (Metal Oxide)
20V
1A (Ta)
1.5V, 4.5V
1.2V @ 1mA
2.4nC @ 4.5V
220pF @ 10V
8V
-
1.6W (Ta)
100 mOhm @ 500mA, 4.5V
-65°C ~ 150°C (TJ)
Surface Mount
TLM621H
6-XFDFN Exposed Pad
IRFR9024NTRLPBF
Infineon Technologies

MOSFET P-CH 55V 11A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고25,092
MOSFET (Metal Oxide)
55V
11A (Tc)
10V
4V @ 250µA
19nC @ 10V
350pF @ 25V
±20V
-
38W (Tc)
175 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFHS8342TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.8A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (2x2)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고703,284
MOSFET (Metal Oxide)
30V
8.8A (Ta), 19A (Tc)
4.5V, 10V
2.35V @ 25µA
8.7nC @ 10V
600pF @ 25V
±20V
-
2.1W (Ta)
16 mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (2x2)
8-PowerVDFN
CSD16323Q3T
Texas Instruments

PROTOTYPE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
25 V
20A (Ta), 105A (Tc)
3V, 8V
1.4V @ 250µA
8.4 nC @ 4.5 V
1300 pF @ 12.5 V
+10V, -8V
-
2.8W (Ta), 74W (Tc)
4.5mOhm @ 24A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
GT650N15K
Goford Semiconductor

N150V,RD(MAX)<65M@10V,VTH2.5V~4.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고5,961
MOSFET (Metal Oxide)
150 V
20A (Tc)
10V
4.5V @ 250µA
12 nC @ 10 V
600 pF @ 75 V
±20V
-
68W (Tc)
65mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHG24N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 21A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
21A (Tc)
-
4V @ 250µA
89 nC @ 10 V
1836 pF @ 100 V
±30V
-
208W (Tc)
184mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
IXFK90N65X3
IXYS

MOSFET 90A 650V X3 TO264K

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FQD5N60CTM-WS
onsemi

MOSFET N-CH 600V 2.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
2.8A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
670 pF @ 25 V
±30V
-
2.5W (Ta), 49W (Tc)
2.5Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSS1N60B
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 17W (Tc)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
1A (Tj)
10V
4V @ 250µA
7.7 nC @ 10 V
215 pF @ 25 V
±30V
-
17W (Tc)
12Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack