페이지 111 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGTI090U06	Infineon Technologies	IGBT MOD HALF BRIDGE 90A UFAST IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Power - Max: 298W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 90A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 5.8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고5,264	Half Bridge	600V	90A	298W	3V @ 15V, 90A	1mA	5.8nF @ 30V	Standard	No	-	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GB70NA60UF	Vishay Semiconductor Diodes Division	IGBT 600V 111A 447W SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 111A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,008	Single	600V	111A	447W	2.44V @ 15V, 70A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
APTGF330DA60D3G	Microsemi Corporation	IGBT 600V 460A 1400W D3 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 460A Power - Max: 1400W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 400A Current - Collector Cutoff (Max): 750µA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	패키지: D-3 Module	재고6,576	Single	600V	460A	1400W	2.5V @ 15V, 400A	750µA	18nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D-3 Module	D3
IXSN55N120A	IXYS	IGBT 1200V SCSOA SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고6,864	Single	1200V	110A	500W	4V @ 15V, 55A	1mA	8nF @ 25V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
FD250R65KE3-K	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 6500V 250A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,560	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-GB200TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 360A 1136W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 360A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 14.9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,720	Half Bridge	1200V	360A	1136W	2.35V @ 15V, 200A	5mA	14.9nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
F4-150R12KS4	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 150A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,256	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGL700SK120D3G	Microsemi Corporation	PWR MOD IGBT4 1200V 840A D3 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 840A Power - Max: 3000W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 37.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	패키지: Module	재고4,272	Single	1200V	840A	3000W	2.2V @ 15V, 600A	5mA	37.2nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	Module	D3
FF400R07KE4	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 650V 400A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,880	-	-	-	-	-	-	-	-	-	-	-	-	-
APT35GT120JU3	Microsemi Corporation	IGBT 1200V 55A 260W SOT227 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 260W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 2.53nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: SOT-227	패키지: ISOTOP	재고3,264	Single	1200V	55A	260W	2.1V @ 15V, 35A	5mA	2.53nF @ 25V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP	SOT-227
FS15R06VE3_B2	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 600V 15A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,824	-	-	-	-	-	-	-	-	-	-	-	-	-
CM150DY-12NF	Powerex Inc.	IGBT MOD DUAL 600V 150A NF SER IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Power - Max: 590W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 23nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,552	Half Bridge	600V	150A	590W	2.2V @ 15V, 150A	1mA	23nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FS150R12W3T7B11BPSA1	Infineon Technologies	LOW POWER EASY AG-EASY3B-1 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A Current - Collector Cutoff (Max): 1.2 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고3	Three Phase Inverter	1200 V	150 A	20 mW	1.8V @ 15V, 150A	1.2 µA	30.1 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
FP75R12N2T4BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-411 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	패키지: -	Request a Quote	Three Phase Inverter	1200 V	75 A	20 mW	2.15V @ 15V, 75A	1 mA	4.3 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-ECONO2B
FP150R12N3T7B11BPSA1	Infineon Technologies	LOW POWER ECONO IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO3	패키지: -	재고21	Three Phase Inverter	1200 V	150 A	20 mW	1.8V @ 15V, 150A	12 µA	30.1 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-ECONO3
FZ1600R17KE3NOSA1	Infineon Technologies	IGBT MOD 1700V 2300A 8950W IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 2300 A Power - Max: 8950 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고6	Three Phase Inverter	1700 V	2300 A	8950 W	2.45V @ 15V, 600A	5 mA	145 nF @ 25 V	Standard	Yes	-40°C ~ 125°C (TJ)	Chassis Mount	Module	Module
F475R07W2H3B11BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고45	-	-	-	-	-	-	-	-	-	-	-	-	-
FF100R12RT4HOSA1	Infineon Technologies	IGBT MOD 1200V 100A 555W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Power - Max: 555 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 630 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	1200 V	100 A	555 W	2.15V @ 15V, 100A	1 mA	630 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
P3000Z45X168HPSA1	Infineon Technologies	PRESS PACK IGBT BG-P16826K-1 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	Single	-	-	-	-	-	-	Standard	No	-	-	-	-
FF450R06ME3BOSA1	Infineon Technologies	IGBT MOD 600V 550A 1250W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 550 A Power - Max: 1250 W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 450A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	600 V	550 A	1250 W	1.9V @ 15V, 450A	5 mA	28 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
BSM300GA120DLCSHOSA1	Infineon Technologies	IGBT MOD 1200V 570A 2250W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 570 A Power - Max: 2250 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 22 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1200 V	570 A	2250 W	2.6V @ 15V, 300A	5 mA	22 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
FS50R12W1T7B11BOMA1	Infineon Technologies	IGBT MODULE LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 7.9 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V Input: - NTC Thermistor: No Operating Temperature: -40°C ~ 175°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고9	-	1200 V	50 A	-	-	7.9 µA	11.1 nF @ 25 V	-	No	-40°C ~ 175°C	Chassis Mount	Module	Module
FZ1200R17HP4B2BOSA2	Infineon Technologies	IGBT MOD 1700V 1200A 7800W IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1200 A Power - Max: 7800 W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 97 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge	1700 V	1200 A	7800 W	2.25V @ 15V, 1200A	5 mA	97 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
F3L300R12ME4B23BOSA1	Infineon Technologies	IGBT MOD 1200V 450A 1550W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 450 A Power - Max: 1550 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	1200 V	450 A	1550 W	2.1V @ 15V, 300A	1 mA	19 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
BSM200GB60DLCHOSA1	Infineon Technologies	IGBT MOD 600V 230A 730W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 230 A Power - Max: 730 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	600 V	230 A	730 W	2.45V @ 15V, 200A	500 µA	9 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
2LS20017E42W36702NOSA1	Infineon Technologies	IGBT MODULE 1700V 20A IGBT Type: - Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 2500 A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Full Bridge Inverter	1700 V	2500 A	-	-	-	-	Standard	Yes	150°C (TJ)	Chassis Mount	Module	-
FF800R17KF6CB2NOSA2	Infineon Technologies	IGBT MODULE A-IHM130-1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FF225R17ME4PB11BPSA1	Infineon Technologies	IGBT MOD 1700V 450A 20MW IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 450 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge	1700 V	450 A	20 mW	2.3V @ 15V, 225A	3 mA	18.5 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module

IRGTI090U06

Infineon Technologies

IGBT MOD HALF BRIDGE 90A UFAST

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Power - Max: 298W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 90A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 5.8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고5,264

Half Bridge

600V

90A

298W

3V @ 15V, 90A

1mA

5.8nF @ 30V

Standard

No

-

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GB70NA60UF

Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 111A
Power - Max: 447W
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,008

Single

600V

111A

447W

2.44V @ 15V, 70A

100µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

APTGF330DA60D3G

Microsemi Corporation

IGBT 600V 460A 1400W D3

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 460A
Power - Max: 1400W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 400A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3

패키지: D-3 Module

재고6,576

Single

600V

460A

1400W

2.5V @ 15V, 400A

750µA

18nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D-3 Module

D3

IXSN55N120A

IXYS

IGBT 1200V SCSOA SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고6,864

Single

1200V

110A

500W

4V @ 15V, 55A

1mA

8nF @ 25V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

FD250R65KE3-K

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 6500V 250A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,560

-

VS-GB200TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 360A 1136W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 360A
Power - Max: 1136W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 14.9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,720

Half Bridge

1200V

360A

1136W

2.35V @ 15V, 200A

5mA

14.9nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

F4-150R12KS4

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 150A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,256

-

APTGL700SK120D3G

Microsemi Corporation

PWR MOD IGBT4 1200V 840A D3

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 840A
Power - Max: 3000W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 37.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3

패키지: Module

재고4,272

Single

1200V

840A

3000W

2.2V @ 15V, 600A

5mA

37.2nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

Module

D3

FF400R07KE4

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 650V 400A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,880

-

APT35GT120JU3

Microsemi Corporation

IGBT 1200V 55A 260W SOT227

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Power - Max: 260W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 2.53nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: SOT-227

패키지: ISOTOP

재고3,264

Single

1200V

55A

260W

2.1V @ 15V, 35A

5mA

2.53nF @ 25V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

ISOTOP

SOT-227

FS15R06VE3_B2

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 15A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,824

-

CM150DY-12NF

Powerex Inc.

IGBT MOD DUAL 600V 150A NF SER

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Power - Max: 590W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 23nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,552

Half Bridge

600V

150A

590W

2.2V @ 15V, 150A

1mA

23nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FS150R12W3T7B11BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY3B-1

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Current - Collector Cutoff (Max): 1.2 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고3

Three Phase Inverter

1200 V

150 A

20 mW

1.8V @ 15V, 150A

1.2 µA

30.1 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

FP75R12N2T4BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

패키지: -

Request a Quote

Three Phase Inverter

1200 V

75 A

20 mW

2.15V @ 15V, 75A

1 mA

4.3 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-ECONO2B

FP150R12N3T7B11BPSA1

Infineon Technologies

LOW POWER ECONO

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO3

패키지: -

재고21

Three Phase Inverter

1200 V

150 A

20 mW

1.8V @ 15V, 150A

12 µA

30.1 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-ECONO3

FZ1600R17KE3NOSA1

Infineon Technologies

IGBT MOD 1700V 2300A 8950W

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 2300 A
Power - Max: 8950 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고6

Three Phase Inverter

1700 V

2300 A

8950 W

2.45V @ 15V, 600A

5 mA

145 nF @ 25 V

Standard

Yes

-40°C ~ 125°C (TJ)

Chassis Mount

Module

F475R07W2H3B11BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고45

-

FF100R12RT4HOSA1

Infineon Technologies

IGBT MOD 1200V 100A 555W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 555 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 630 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

2 Independent

1200 V

100 A

555 W

2.15V @ 15V, 100A

1 mA

630 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

P3000Z45X168HPSA1

Infineon Technologies

PRESS PACK IGBT BG-P16826K-1

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

Single

-

Standard

No

-

FF450R06ME3BOSA1

Infineon Technologies

IGBT MOD 600V 550A 1250W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 550 A
Power - Max: 1250 W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 450A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

2 Independent

600 V

550 A

1250 W

1.9V @ 15V, 450A

5 mA

28 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

BSM300GA120DLCSHOSA1

Infineon Technologies

IGBT MOD 1200V 570A 2250W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Power - Max: 2250 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

1200 V

570 A

2250 W

2.6V @ 15V, 300A

5 mA

22 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

FS50R12W1T7B11BOMA1

Infineon Technologies

IGBT MODULE LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Input: -
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고9

-

1200 V

50 A

-

7.9 µA

11.1 nF @ 25 V

-

No

-40°C ~ 175°C

Chassis Mount

Module

FZ1200R17HP4B2BOSA2

Infineon Technologies

IGBT MOD 1700V 1200A 7800W

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1200 A
Power - Max: 7800 W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge

1700 V

1200 A

7800 W

2.25V @ 15V, 1200A

5 mA

97 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

F3L300R12ME4B23BOSA1

Infineon Technologies

IGBT MOD 1200V 450A 1550W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Power - Max: 1550 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

2 Independent

1200 V

450 A

1550 W

2.1V @ 15V, 300A

1 mA

19 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

BSM200GB60DLCHOSA1

Infineon Technologies

IGBT MOD 600V 230A 730W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 230 A
Power - Max: 730 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

600 V

230 A

730 W

2.45V @ 15V, 200A

500 µA

9 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

2LS20017E42W36702NOSA1

Infineon Technologies

IGBT MODULE 1700V 20A

IGBT Type: -
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 2500 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

Full Bridge Inverter

1700 V

2500 A

-

Standard

Yes

150°C (TJ)

Chassis Mount

Module

-

FF800R17KF6CB2NOSA2

Infineon Technologies

IGBT MODULE A-IHM130-1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FF225R17ME4PB11BPSA1

Infineon Technologies

IGBT MOD 1700V 450A 20MW

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 450 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge

1700 V

450 A

20 mW

2.3V @ 15V, 225A

3 mA

18.5 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module