페이지 122 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  122/123
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제조업체
설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7U150HF12B
Infineon Technologies

MOD IGBT 1200V 150A POWIR 62

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 900W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 14nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
패키지: POWIR? 62 Module
재고7,680
Half Bridge
1200V
300A
900W
2V @ 15V, 150A
1mA
14nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 62 Module
POWIR? 62
APTGT50H60T2G
Microsemi Corporation

MOD IGBT 600V 80A SP2

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 176W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP2
  • Supplier Device Package: SP2
패키지: SP2
재고3,296
Full Bridge Inverter
600V
80A
176W
1.9V @ 15V, 50A
250µA
3.15nF @ 25V
Standard
Yes
-
Chassis Mount
SP2
SP2
CM50DU-24H
Powerex Inc.

IGBT MOD DUAL 1200V 50A U SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 400W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 7.5nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,904
Half Bridge
1200V
50A
400W
3.7V @ 15V, 50A
1mA
7.5nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGV15H120T3G
Microsemi Corporation

IGBT NPT BST CHOP FULL BRDG SP3

  • IGBT Type: NPT, Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 25A
  • Power - Max: 115W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고3,072
Full Bridge Inverter
1200V
25A
115W
2.1V @ 15V, 15A
250µA
1.1nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTGT100A170D1G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 695W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 8.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
패키지: D1
재고3,680
Half Bridge
1700V
200A
695W
2.4V @ 15V, 100A
3mA
8.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
FMG2G300LS60E
Fairchild/ON Semiconductor

IGBT POWER MOD 600V 300A 7PM-HA

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 892W
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 7PM-HA
  • Supplier Device Package: 7PM-HA
패키지: 7PM-HA
재고7,888
Half Bridge
600V
300A
892W
1.8V @ 15V, 300A
250µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
7PM-HA
7PM-HA
APTGT150H170G
Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 250A
  • Power - Max: 890W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 150A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 13.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고2,032
Full Bridge Inverter
1700V
250A
890W
2.4V @ 15V, 150A
350µA
13.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTGT100TL170G
Microsemi Corporation

PWR MOD IGBT 3LEVEL INVERTER SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 560W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6
패키지: Module
재고2,800
Three Level Inverter
1700V
150A
560W
2.4V @ 15V, 100A
350µA
9nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP6
FD300R12KS4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 300A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,032
-
-
-
-
-
-
-
-
-
-
-
-
-
FP15R06W1E3_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 22A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,008
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FP15R06W1E3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 22A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,536
-
-
-
-
-
-
-
-
-
-
-
-
-
hot APTCV60HM45BC20T3G
Microsemi Corporation

POWER MOD IGBT3 FULL BRIDGE SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Boost Chopper, Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고5,808
Boost Chopper, Full Bridge
600V
50A
250W
1.9V @ 15V, 50A
250µA
3.15nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
FZ400R12KE3B1HOSA1
Infineon Technologies

IGBT MOD 1200V 650A 2250W

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 650 A
  • Power - Max: 2250 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고27
Single
1200 V
650 A
2250 W
2.15V @ 15V, 400A
5 mA
28 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FP35R12KT4B11BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-711

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 210 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고42
Three Phase Inverter
1200 V
35 A
210 W
2.15V @ 15V, 35A
1 mA
2 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
P2000DE45X168HPSA1
Infineon Technologies

PRESS PACK IGBT

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
BSM50GD60DLCBOSA1
Infineon Technologies

IGBT MODULE 600V 70A 250W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 250 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
600 V
70 A
250 W
2.45V @ 15V, 50A
500 µA
2.2 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FF600R12KF4NOSA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 3900 W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
  • Current - Collector Cutoff (Max): 8 mA
  • Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
2 Independent
1200 V
600 A
3900 W
3.2V @ 15V, 600A
8 mA
45 nF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
-
BSM50GD120DN2E3226BOSA1
Infineon Technologies

IGBT MOD 1200V 50A 350W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 350 W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
50 A
350 W
3V @ 15V, 50A
1 mA
3.3 nF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
Module
DF150R12RT4HOSA1
Infineon Technologies

IGBT MOD 1200V 150A 790W

  • IGBT Type: Trench Field Stop
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 790 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single Chopper
1200 V
150 A
790 W
2.15V @ 15V, 150A
1 mA
9.3 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FF600R12KT4HOSA1
Infineon Technologies

62MM POWER MODULE 1200 V WITH IG

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM
패키지: -
Request a Quote
2 Independent
1200 V
600 A
-
2.2V @ 15V, 600A
5 mA
38 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-62MM
FP25R12W2T4BOMA1
Infineon Technologies

IGBT MOD 1200V 39A 175W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 39 A
  • Power - Max: 175 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
39 A
175 W
2.25V @ 15V, 25A
1 mA
1.45 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF600R12ME4EB11BOSA1
Infineon Technologies

IGBT MOD 1200V 995A 4050W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 995 A
  • Power - Max: 4050 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고15
Half Bridge
1200 V
995 A
4050 W
2.1V @ 15V, 600A
3 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF600R06ME3BOSA1
Infineon Technologies

IGBT MOD 600V 700A 1650W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 700 A
  • Power - Max: 1650 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
600 V
700 A
1650 W
1.9V @ 15V, 600A
5 mA
39 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP75R17N3E4B20BPSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 555 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO3
패키지: -
Request a Quote
Three Phase Inverter
1700 V
150 A
555 W
2.3V @ 15V, 75A
1 mA
6.8 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO3
FS200R12PT4PBOSA1
Infineon Technologies

IGBT MOD 1200V 200A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
Full Bridge
1200 V
200 A
20 mW
2.15V @ 15V, 200A
1 mA
14 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM75GAR120DN2HOSA1
Infineon Technologies

IGBT MOD 1200V 30A 235W

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Power - Max: 235 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Current - Collector Cutoff (Max): 400 µA
  • Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Single
1200 V
30 A
235 W
2.2V @ 15V, 15A
400 µA
1 nF @ 25 V
Standard
No
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
BSM30GP60B2BOSA1
Infineon Technologies

IGBT MODULE 600V 50A 180W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 180 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Full Bridge
600 V
50 A
180 W
2.45V @ 15V, 30A
500 µA
1.6 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FP50R12W2T7B11BOMA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
  • Current - Collector Cutoff (Max): 8 µA
  • Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B-2
패키지: -
재고33
Three Phase Inverter
1200 V
50 A
20 mW
1.5V @ 15V, 50A
8 µA
11.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY2B-2