페이지 28 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  28/123
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제조업체
설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VS-GT400TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 600A 2119W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 2119W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 28.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
패키지: Double INT-A-PAK (3 + 8)
재고3,408
Half Bridge
1200V
600A
2119W
2.15V @ 15V, 400A
5mA
28.8nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
CM75BU-12H
Powerex Inc.

IGBT MOD H-BRDG 600V 75A U SER

  • IGBT Type: -
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 310W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 6.6nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,096
Full Bridge Inverter
600V
75A
310W
3V @ 15V, 75A
1mA
6.6nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot IXGN200N60B
IXYS

IGBT FAST 600V 200A SOT-227B

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 600W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: 11nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고18,000
Single
600V
200A
600W
2.1V @ 15V, 120A
200µA
11nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
APTGF90SK60TG
Microsemi Corporation

IGBT 600V 110A 416W SP4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고3,392
Single
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGF100SK120TG
Microsemi Corporation

IGBT 1200V 135A 568W SP4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 135A
  • Power - Max: 568W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 6.9nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고6,880
Single
1200V
135A
568W
3.7V @ 15V, 100A
350µA
6.9nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
FF800R17KF6C_B2
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 800A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,160
-
-
-
-
-
-
-
-
-
-
-
-
-
FZ1800R17HP4B29BOSA2
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1700V 1800A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,504
-
-
-
-
-
-
-
-
-
-
-
-
-
FS150R17N3E4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 650V 150A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,576
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FF225R12ME4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 225A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,808
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGT75DA170T1G
Microsemi Corporation

IGBT 1700V 130A 465W SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 130A
  • Power - Max: 465W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 6.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고2,400
Single
1700V
130A
465W
2.4V @ 15V, 75A
250µA
6.8nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot FS15R12VT3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 15A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,688
-
-
-
-
-
-
-
-
-
-
-
-
-
GSID300A125S5C1
Global Power Technologies Group

IGBT MODULE 1250V 600A CHASSIS

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1250V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 30.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,328
Three Level Inverter
1250V
600A
2500W
2.4V @ 15V, 300A
1mA
30.8nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot FF900R12IE4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 900A

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 900A
  • Power - Max: 5.1W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 54nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,584
Single
1200V
900A
5.1W
2.05V @ 15V, 900A
5mA
54nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FS200R07PE4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 650V 200A

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 600W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 12nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,136
Three Phase Inverter
650V
200A
600W
1.95V @ 15V, 200A
1mA
12nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot IXDN55N120D1
IXYS

IGBT 1200V 100A W/DIODE SOT-227B

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 450W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 55A
  • Current - Collector Cutoff (Max): 3.8mA
  • Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고6,320
Single
1200V
100A
450W
2.8V @ 15V, 55A
3.8mA
3.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
BSM10GD120DN2E3224BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2A-211

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 15 A
  • Power - Max: 80 W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
  • Current - Collector Cutoff (Max): 400 µA
  • Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
Request a Quote
Full Bridge
1200 V
15 A
80 W
3.2V @ 15V, 10A
400 µA
530 pF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
FF225R17ME4BOSA1
Infineon Technologies

IGBT MOD 1700V 340A 1500W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 340 A
  • Power - Max: 1500 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
340 A
1500 W
2.3V @ 15V, 225A
3 mA
18.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP75R12N2T7PB11BPSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 14 µA
  • Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고30
Three Phase Inverter
1200 V
75 A
20 mW
1.8V @ 15V, 75A
14 µA
15.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-ECONO2B
PS3GFANSET30600NOSA1
Infineon Technologies

MOD IGBT STACK PSAO-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FZ2400R17HE4B9NPSA1
Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: -
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 2400 A
  • Power - Max: 15500 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 2.4kA
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Single Switch
1700 V
2400 A
15500 W
2.3V @ 15V, 2.4kA
5 mA
195 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
FF225R65T3E3P5BPMA1
Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-XHP3K6

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 5900 V
  • Current - Collector (Ic) (Max): 225 A
  • Power - Max: 1000 W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-XHP3K65
패키지: -
Request a Quote
2 Independent
5900 V
225 A
1000 W
3.4V @ 15V, 225A
5 mA
65.6 nF @ 25 V
Standard
No
125°C (TJ)
Chassis Mount
Module
AG-XHP3K65
NXH600B100H4Q2F2SG
onsemi

MASS MARKET GEN3 Q2BOOST

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 192 A
  • Power - Max: 511 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
  • Current - Collector Cutoff (Max): 10 µA
  • Input Capacitance (Cies) @ Vce: 13.256 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 44-PIM (93x47)
패키지: -
재고93
Three Level Inverter
1000 V
192 A
511 W
2.3V @ 15V, 200A
10 µA
13.256 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
44-PIM (93x47)
FZ250R65KE3NPSA1
Infineon Technologies

IGBT MOD 6500V 500A 4800W

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 6500 V
  • Current - Collector (Ic) (Max): 500 A
  • Power - Max: 4800 W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 69 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
6500 V
500 A
4800 W
3.4V @ 15V, 250A
5 mA
69 nF @ 25 V
Standard
No
-50°C ~ 125°C
Chassis Mount
Module
Module
FF1400R12IP4B60BOSA1
Infineon Technologies

PP IHM I

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 1400 A
  • Power - Max: 7650 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Half Bridge Inverter
1200 V
1400 A
7650 W
2.05V @ 15V, 1.4kA
5 mA
82000 pF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
FP10R06W1E3BOMA1
Infineon Technologies

IGBT MODULE 600V 16A 68W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 16 A
  • Power - Max: 68 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고9
Three Phase Inverter
600 V
16 A
68 W
2V @ 15V, 10A
1 mA
550 pF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FB10R06KL4GBOMA1
Infineon Technologies

MOD IGBT LOW PWR EASY2-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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FF450R12ME4PBOSA1
Infineon Technologies

IGBT MODULE 1200V 450A

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
2 Independent
1200 V
450 A
-
2.1V @ 15V, 450A
3 mA
28 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS100R12N2T4B11BOSA1
Infineon Technologies

FS100R12 - IGBT MODULE

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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