페이지 46 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  46/123
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설명
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재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FS75R12KE3_B3
Infineon Technologies Industrial Power and Controls Americas

IGBT FS75R12KE3B3NOSA1

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 355W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,208
Three Phase Inverter
1200V
100A
355W
2.15V @ 15V, 75A
5mA
5.3nF @ 25V
Standard
Yes
150°C (TJ)
Chassis Mount
Module
Module
hot CM75DY-34A
Powerex Inc.

IGBT MOD DUAL 1700V 75A A SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 18.5nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,576
Half Bridge
1700V
75A
780W
2.8V @ 15V, 75A
1mA
18.5nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM200HA-24H
Powerex Inc.

IGBT MOD SGL 1200V 200A H SER

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 1500W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 40nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,632
Single
1200V
200A
1500W
3.4V @ 15V, 200A
1mA
40nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM15TF-24H
Powerex Inc.

IGBT MOD 6PAC 1200V 15A H SER

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Power - Max: 150W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 3nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,568
Three Phase Inverter
1200V
15A
150W
3.4V @ 15V, 15A
1mA
3nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot CM100DY-24H
Powerex Inc.

IGBT MOD DUAL 1200V 100A H SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 20nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,840
Half Bridge
1200V
100A
780W
3.4V @ 15V, 100A
1mA
20nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGV25H120T3G
Microsemi Corporation

IGBT NPT BST CHOP FULL BRDG SP3

  • IGBT Type: NPT, Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Power - Max: 156W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고2,016
Full Bridge Inverter
1200V
40A
156W
2.1V @ 15V, 25A
250µA
1.8nF @ 25V
Standard
Yes
-
Chassis Mount
SP3
SP3
APTGF25H120T3G
Microsemi Corporation

IGBT MODULE NPT FULL BRIDGE SP3

  • IGBT Type: NPT
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Power - Max: 208W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고4,352
Full Bridge Inverter
1200V
40A
208W
3.7V @ 15V, 25A
250µA
1.65nF @ 25V
Standard
Yes
-
Chassis Mount
SP3
SP3
FMS6G10US60
Fairchild/ON Semiconductor

IGBT 600V 10A 25PM-AA

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Power - Max: 66W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.71nF @ 30V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 25PM-AA
  • Supplier Device Package: 25PM-AA
패키지: 25PM-AA
재고5,648
Three Phase Inverter
600V
10A
66W
2.7V @ 15V, 10A
250µA
0.71nF @ 30V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
25PM-AA
25PM-AA
FS400R07A1E3S7BOMA1
Infineon Technologies

IGBT MODULES

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,944
-
-
-
-
-
-
-
-
-
-
-
-
-
CM450DY-24S
Powerex Inc.

IGBT MOD DUAL 1200V 410A NX SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 410A
  • Power - Max: 3330W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 450A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 45nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,312
Half Bridge
1200V
410A
3330W
2.25V @ 15V, 450A
1mA
45nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MID550-12A4
IXYS

MOD IGBT RBSOA 1200V 670A Y3-DCB

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 670A
  • Power - Max: 2750W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
  • Current - Collector Cutoff (Max): 21mA
  • Input Capacitance (Cies) @ Vce: 26nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-DCB
  • Supplier Device Package: Y3-DCB
패키지: Y3-DCB
재고3,648
Single
1200V
670A
2750W
2.8V @ 15V, 400A
21mA
26nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Y3-DCB
Y3-DCB
APTGT300TL65G
Microsemi Corporation

IGBT 650V SP6C

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,800
-
-
-
-
-
-
-
-
-
-
-
-
-
FF450R07ME4_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 450A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,944
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGT200H60G
Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 290A
  • Power - Max: 625W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고6,192
Full Bridge Inverter
600V
290A
625W
1.9V @ 15V, 200A
250µA
12.3nF @ 25V
Standard
No
-40°C ~ 175°C (TJ)
Chassis Mount
SP6
SP6
FP50R12KT4G
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 50A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,744
-
-
-
-
-
-
-
-
-
-
-
-
-
VS-70MT060WSP
Vishay Semiconductor Diodes Division

IGBT 600V 96A 378W MTP

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 96A
  • Power - Max: 378W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 7.43nF @ 30V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 12-MTP Module
  • Supplier Device Package: MTP
패키지: 12-MTP Module
재고6,176
Single
600V
96A
378W
2.15V @ 15V, 40A
100µA
7.43nF @ 30V
Single Phase Bridge Rectifier
Yes
150°C (TJ)
Chassis Mount
12-MTP Module
MTP
APTGT75DDA60T3G
Microsemi Corporation

IGBT MOD TRENCH DL BST CHOP SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Dual Boost Chopper
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고5,104
Dual Boost Chopper
600V
100A
250W
1.9V @ 15V, 75A
250µA
4.62nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
APTGT50DH60T1G
Microsemi Corporation

MOD IGBT 600V 80A SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 176W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고4,384
Asymmetrical Bridge
600V
80A
176W
1.9V @ 15V, 50A
250µA
3.15nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
APTCV60HM45RT3G
Microsemi Corporation

POWER MOD IGBT3 FULL BRIDGE SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고4,656
Full Bridge Inverter
600V
50A
250W
1.9V @ 15V, 50A
250µA
3.15nF @ 25V
Single Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
APT100GT120JRDQ4
Microsemi Corporation

IGBT 1200V 123A 570W SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 123A
  • Power - Max: 570W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: 7.85nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
패키지: ISOTOP
재고6,552
Single
1200V
123A
570W
3.7V @ 15V, 100A
200µA
7.85nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP
ISOTOP?
FZ1600R17KF6CB2NOSA1
Infineon Technologies

FZ1600R17KF6C_B2 - 1700V IGBT MO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FF600R17KE3B2NOSA1
Infineon Technologies

IGBT MODULE 1700V 4300W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 4300 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
-
4300 W
2.45V @ 15V, 600A
5 mA
54 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FP75R12N2T7BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-711

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
  • Current - Collector Cutoff (Max): 14 µA
  • Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고12
Three Phase Inverter
1200 V
75 A
20 mW
1.55V @ 15V, 75A
14 µA
15.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-ECONO2B
F4150R12N3H3FB11BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO3B-411

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3
-
-
-
-
-
-
-
-
-
-
-
-
-
NXH25C120L2C2SG
onsemi

IGBT MODULE, CIB 1200 V, 25 A IG

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
  • Supplier Device Package: 26-DIP
패키지: -
재고12
Three Phase Inverter with Brake
1200 V
25 A
20 mW
2.4V @ 15V, 25A
250 µA
6.2 nF @ 20 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Through Hole
26-PowerDIP Module (1.199", 47.20mm)
26-DIP
FS100R12KT4BOSA1
Infineon Technologies

IGBT MOD 1200V 100A 515W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 515 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
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Three Phase Inverter
1200 V
100 A
515 W
2.1V @ 15V, 100A
1 mA
6.3 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
PCHMB50W6
KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 181 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4500 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
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Single
650 V
50 A
181 W
1.95V @ 15V, 50A
1 mA
4500 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FF150R12YT3BOMA1
Infineon Technologies

IGBT MOD 1200V 200A 625W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 625 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
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2 Independent
1200 V
200 A
625 W
2.15V @ 15V, 150A
1 mA
10.5 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module