페이지 57 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSM150GD60DLC
Infineon Technologies Industrial Power and Controls Americas

IGBT BSM150GD60DLCBOSA1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 180A
  • Power - Max: 570W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,544
Single
600V
180A
570W
2.45V @ 15V, 150A
500µA
6.5nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Module
Module
CM1000E3U-34NF
Powerex Inc.

IGBT MOD NF CHOPPER 1000A 1700V

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 1000A
  • Power - Max: 3900W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 220nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고2,224
Single
1700V
1000A
3900W
2.8V @ 15V, 1000A
1mA
220nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
-
Module
Module
CM200DY-28H
Powerex Inc.

IGBT MOD DUAL 1400V 200A H SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 1500W
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 40nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,040
Half Bridge
1400V
200A
1500W
4.2V @ 15V, 200A
1mA
40nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot FF600R12ME4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 600A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고12,192
-
-
-
-
-
-
-
-
-
-
-
-
-
FD200R12PT4_B6
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,504
-
-
-
-
-
-
-
-
-
-
-
-
-
MDI550-12A4
IXYS

MOD IGBT BUCK 1200V 670A Y3-DCB

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 670A
  • Power - Max: 2750W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
  • Current - Collector Cutoff (Max): 21mA
  • Input Capacitance (Cies) @ Vce: 26nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-DCB
  • Supplier Device Package: Y3-DCB
패키지: Y3-DCB
재고4,656
Single
1200V
670A
2750W
2.8V @ 15V, 400A
21mA
26nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Y3-DCB
Y3-DCB
APTCV60HM70RT3G
Microsemi Corporation

POWER MOD FULL BRIDGE SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고2,352
Full Bridge Inverter
600V
50A
250W
1.9V @ 15V, 50A
250µA
3.15nF @ 25V
Single Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
IXGN400N30A3
IXYS

IGBT 300V SOT-227B

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 735W
  • Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: 19nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고4,032
Single
300V
400A
735W
1.15V @ 15V, 100A
50µA
19nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
GHIS040A060S-A2
Global Power Technologies Group

IGBT BUCK CHOP 600V 80A SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 277W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 2.72nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고7,472
Single
600V
80A
277W
2.5V @ 15V, 40A
1mA
2.72nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
FP50R12KE3BOSA1
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 50A

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 280W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 3.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,744
Single
1200V
75A
280W
2.15V @ 15V, 50A
5mA
3.5nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
VS-CPV364M4KPBF
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 13A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Power - Max: 63W
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.6nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
패키지: 19-SIP (13 Leads), IMS-2
재고6,480
Three Phase Inverter
600V
24A
63W
1.8V @ 15V, 24A
250µA
1.6nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
FS150R12N2T7BPSA2
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1.2 µA
  • Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2
패키지: -
Request a Quote
Three Phase Inverter
1200 V
150 A
20 mW
1.8V @ 15V, 150A
1.2 µA
30.1 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-ECONO2
FP25R12KT4BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 160 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고45
Three Phase Inverter
1200 V
25 A
160 W
2.15V @ 15V, 25A
1 mA
1.45 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
PCFMB200W6
KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 595 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 17000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
650 V
200 A
595 W
1.95V @ 15V, 200A
1 mA
17000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FF150R17KE4HOSA1
Infineon Technologies

MODULE IGBT 1700V AG-62MM-1

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
150 A
-
2.3V @ 15V, 150A
1 mA
12 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
NXH40T120L3Q1PTG
onsemi

PIM Q1 3 CHANNEL T-TYPE NPC 40A

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 42 A
  • Power - Max: 146 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Current - Collector Cutoff (Max): 400 µA
  • Input Capacitance (Cies) @ Vce: 7.753 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 44-PIM (71x37.4)
패키지: -
Request a Quote
Three Phase Inverter
1200 V
42 A
146 W
2.2V @ 15V, 40A
400 µA
7.753 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
44-PIM (71x37.4)
FZ3600R17KE3
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 350 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 3.6kA, 15V
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHM190-2-1
패키지: -
Request a Quote
Single Switch
1700 V
-
350 W
2.45V @ 3.6kA, 15V
5 mA
3.3 nF @ 25 V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
AG-IHM190-2-1
FF900R12IP4DVBOSA1
Infineon Technologies

IGBT MOD 1200V 900A 5100W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 5100 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1200 V
900 A
5100 W
2.05V @ 15V, 900A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
PDMB75W12
KYOCERA AVX

IGBT MODULE, 2IN1, 1200V/75A

  • IGBT Type: -
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 290 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 8000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고36
Dual, Common Source
1200 V
75 A
290 W
2V @ 15V, 75A
1 mA
8000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FZ900R12KE4HOSA1
Infineon Technologies

IGBT MOD 1200V 900A 4300W

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 4300 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고21
Single
1200 V
900 A
4300 W
2.1V @ 15V, 900A
5 mA
56 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FS3L50R07W2H3FB11BPSA1
Infineon Technologies

IGBT MOD 650V 50A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
650 V
50 A
20 mW
1.8V @ 15V, 50A
1 mA
3.1 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
PRHMB75W12
KYOCERA AVX

IGBT MODULE, 1IN1, BRAKE CHOPPER

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 290 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 8000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1200 V
75 A
290 W
2V @ 15V, 75A
1 mA
8000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FZ2000R33HE4BOSA1
Infineon Technologies

IGBT MOD IHV IHM T XHP 3 3-6 5K

  • IGBT Type: Trench Field Stop
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 2000 A
  • Power - Max: 4.2 mW
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB190-3
패키지: -
재고15
Single Switch
3300 V
2000 A
4.2 mW
2.2V @ 15V, 2kA (Typ)
5 mA
280 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-IHVB190-3
FS100R07N2E4BOSA1
Infineon Technologies

IGBT MOD 650V 100A 335W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 335 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
650 V
100 A
335 W
1.95V @ 15V, 100A
1 mA
6.2 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FZ1800R17KF4NOSA1
Infineon Technologies

FZ1800R17 - INSULATED GATE BIPOL

  • IGBT Type: Trench Field Stop
  • Configuration: 3 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 3560 A
  • Power - Max: 13500 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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3 Independent
1200 V
3560 A
13500 W
2.1V @ 15V, 2.4kA
5 mA
150 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MIXG120W1200PTEH
IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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-
-
-
-
-
-
-
-
-
-
-
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FF600R12IP4B60BPSA1
Infineon Technologies

PP IHM I

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
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Half Bridge Inverter
1200 V
600 A
-
2.05V @ 15V, 600A
5 mA
37000 pF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
FS75R12W2T4BOMA1
Infineon Technologies

IGBT MOD 1200V 107A 375W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 107 A
  • Power - Max: 375 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고33
Full Bridge
1200 V
107 A
375 W
2.15V @ 15V, 75A
1 mA
4.3 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module