페이지 63 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MWI50-12E7	IXYS	MOD IGBT SIXPACK H-BRDG 1200V E2 IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Power - Max: 350W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 800µA Input Capacitance (Cies) @ Vce: 3.8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고2,768	Three Phase Inverter	1200V	90A	350W	2.4V @ 15V, 50A	800µA	3.8nF @ 25V	Standard	No	-40°C ~ 125°C (TJ)	Chassis Mount	E2	E2
VS-GT400TH60N	Vishay Semiconductor Diodes Division	IGBT 600V 530A 1600W DIAP IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 530A Power - Max: 1600W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 30.8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 8) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 8)	재고3,648	Half Bridge	600V	530A	1600W	2.05V @ 15V, 400A	5mA	30.8nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 8)	Double INT-A-PAK
VS-GB200NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 420A 1562W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 420A Power - Max: 1562W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,080	Single	1200V	420A	1562W	1.8V @ 15V, 200A (Typ)	5mA	18nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
APTGT200H120G	Microsemi Corporation	IGBT MOD TRENCH FULL BRIDGE SP6 IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 280A Power - Max: 890W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A Current - Collector Cutoff (Max): 350µA Input Capacitance (Cies) @ Vce: 14nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고3,312	Full Bridge Inverter	1200V	280A	890W	2.1V @ 15V, 200A	350µA	14nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
MII300-12A4	IXYS	MOD IGBT RBSOA 1200V 330A Y3-DCB IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 330A Power - Max: 1380W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A Current - Collector Cutoff (Max): 13mA Input Capacitance (Cies) @ Vce: 13nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	패키지: Y3-DCB	재고2,880	Half Bridge	1200V	330A	1380W	2.7V @ 15V, 200A	13mA	13nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
APTGT225DU170G	Microsemi Corporation	IGBT MOD TRENCH DUAL SOURCE SP6 IGBT Type: Trench Field Stop Configuration: Dual, Common Source Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 340A Power - Max: 1250W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 20nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고7,312	Dual, Common Source	1700V	340A	1250W	2.4V @ 15V, 225A	500µA	20nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
MDI200-12A4	IXYS	MOD IGBT BUCK 1200V 270A Y3-DCB IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 270A Power - Max: 1130W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A Current - Collector Cutoff (Max): 10mA Input Capacitance (Cies) @ Vce: 11nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	패키지: Y3-DCB	재고7,536	Single	1200V	270A	1130W	2.7V @ 15V, 150A	10mA	11nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
MWI50-12A7T	IXYS	MOD IGBT SIXPACK RBSOA 1200V E2 IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Power - Max: 350W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 3.3nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고7,296	Three Phase Inverter	1200V	85A	350W	2.7V @ 15V, 50A	4mA	3.3nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	E2	E2
FF150R12KE3G	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 150A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,744	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT300SK60G	Microsemi Corporation	IGBT 600V 430A 1150W SP6 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 430A Power - Max: 1150W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A Current - Collector Cutoff (Max): 350µA Input Capacitance (Cies) @ Vce: 24nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고3,392	Single	600V	430A	1150W	1.8V @ 15V, 300A	350µA	24nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
APTGT150H60TG	Microsemi Corporation	IGBT MOD TRENCH FULL BRIDGE SP4 IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 225A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 9.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고4,512	Full Bridge Inverter	600V	225A	480W	1.9V @ 15V, 150A	250µA	9.2nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP4	SP4
MWI25-12A7T	IXYS	MOD IGBT SIXPACK RBSOA 1200V E2 IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Power - Max: 225W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 1.65nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고5,904	Three Phase Inverter	1200V	50A	225W	2.7V @ 15V, 25A	2mA	1.65nF @ 25V	Standard	Yes	-40°C ~ 125°C (TJ)	Chassis Mount	E2	E2
MIXA20WB1200TED	IXYS	IGBT MODULE 1200V 20A HEX IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 28A Power - Max: 100W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A Current - Collector Cutoff (Max): 1.5mA Input Capacitance (Cies) @ Vce: - Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고2,496	Three Phase Inverter with Brake	1200V	28A	100W	2.1V @ 15V, 16A	1.5mA	-	Three Phase Bridge Rectifier	Yes	-40°C ~ 125°C (TJ)	Chassis Mount	E2	E2
FS10R12VT3	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 600V 10A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,704	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT50SK170T1G	Microsemi Corporation	IGBT 1700V 75A 312W SP1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 75A Power - Max: 312W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 4.4nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고3,680	Single	1700V	75A	312W	2.4V @ 15V, 50A	250µA	4.4nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
IXYN100N120C3	IXYS	IGBT XPT 1200V 152A SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 152A Power - Max: 830W Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Current - Collector Cutoff (Max): 25µA Input Capacitance (Cies) @ Vce: 6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고7,520	Single	1200V	152A	830W	3.5V @ 15V, 100A	25µA	6nF @ 25V	Standard	No	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
CM200DU-12F	Powerex Inc.	IGBT MOD DUAL 600V 200A F SER IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 590W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 54nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,776	Half Bridge	600V	200A	590W	2.2V @ 15V, 200A	1mA	54nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
BSM10GP120B9BOSA1	Infineon Technologies	IGBT MODULE 1200V IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 20 A Power - Max: 100 W Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1200 V	20 A	100 W	2.85V @ 15V, 10A	500 µA	600 pF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 125°C	Chassis Mount	Module	Module
FP100R07N2E4BPSA1	Infineon Technologies	LOW POWER ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FF600R12ME4AB11BOSA1	Infineon Technologies	IGBT MODULE 1200V 3350W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Power - Max: 3350 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고15	2 Independent	1200 V	-	3350 W	2.1V @ 15V, 600A	3 mA	37 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
BSM200GA120DLCHOSA1	Infineon Technologies	IGBT MOD 1200V 370A 1450W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 370 A Power - Max: 1450 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1200 V	370 A	1450 W	2.6V @ 15V, 200A	5 mA	13 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
BSM100GB120DLCHOSA1	Infineon Technologies	IGBT MOD 1200V 100A 830W IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Power - Max: 830 W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge	1200 V	100 A	830 W	-	-	-	Standard	Yes	-40°C ~ 125°C	Chassis Mount	Module	Module
MSCGLQ75X120CTYZBNMG	Microchip Technology	PM-IGBT-SBD-NHPD IGBT Type: - Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 452 W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4400 pF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Three Phase Inverter with Brake	1200 V	150 A	452 W	2.4V @ 15V, 75A	50 µA	4400 pF @ 25 V	Three Phase Bridge Rectifier	Yes	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
FF650R17IE4VBOSA1	Infineon Technologies	IGBT MODULE 1700V 4150W IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): - Power - Max: 4150 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	1700 V	-	4150 W	2.45V @ 15V, 650A	5 mA	54 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
PCHMB200W12	KYOCERA AVX	IGBT MODULE, 1IN1, CHOPPER CIRCU IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 200 A Power - Max: 961 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19000 pF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1200 V	200 A	961 W	2V @ 15V, 200A	1 mA	19000 pF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
NXH35C120L2C2SG	onsemi	IGBT MODULE, CIB 1200 V, 35 A IG IGBT Type: - Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 35 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 26-PowerDIP Module (1.199", 47.20mm) Supplier Device Package: 26-DIP	패키지: -	Request a Quote	Three Phase Inverter with Brake	1200 V	35 A	20 mW	2.4V @ 15V, 35A	250 µA	8.33 nF @ 20 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	26-PowerDIP Module (1.199", 47.20mm)	26-DIP
FP150R12KT4B11BPSA1	Infineon Technologies	IGBT MODULE 1200V 150A IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1200 V	150 A	-	2.1V @ 15V, 150A	1 mA	9.35 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
6MS24017E33W32859NOSA1	Infineon Technologies	IGBT MODULE 9980W STACK A-MS3-1 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: 9980 W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -25°C ~ 55°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	-	-	9980 W	-	-	-	Standard	Yes	-25°C ~ 55°C	Chassis Mount	Module	Module

MWI50-12E7

IXYS

MOD IGBT SIXPACK H-BRDG 1200V E2

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 90A
Power - Max: 350W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 800µA
Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고2,768

Three Phase Inverter

1200V

90A

350W

2.4V @ 15V, 50A

800µA

3.8nF @ 25V

Standard

No

-40°C ~ 125°C (TJ)

Chassis Mount

E2

VS-GT400TH60N

Vishay Semiconductor Diodes Division

IGBT 600V 530A 1600W DIAP

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 530A
Power - Max: 1600W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 30.8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 8)

재고3,648

Half Bridge

600V

530A

1600W

2.05V @ 15V, 400A

5mA

30.8nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 8)

Double INT-A-PAK

VS-GB200NH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 420A 1562W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 420A
Power - Max: 1562W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,080

Single

1200V

420A

1562W

1.8V @ 15V, 200A (Typ)

5mA

18nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

APTGT200H120G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP6

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 280A
Power - Max: 890W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
Current - Collector Cutoff (Max): 350µA
Input Capacitance (Cies) @ Vce: 14nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고3,312

Full Bridge Inverter

1200V

280A

890W

2.1V @ 15V, 200A

350µA

14nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

MII300-12A4

IXYS

MOD IGBT RBSOA 1200V 330A Y3-DCB

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 330A
Power - Max: 1380W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
Current - Collector Cutoff (Max): 13mA
Input Capacitance (Cies) @ Vce: 13nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Supplier Device Package: Y3-DCB

패키지: Y3-DCB

재고2,880

Half Bridge

1200V

330A

1380W

2.7V @ 15V, 200A

13mA

13nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Y3-DCB

APTGT225DU170G

Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP6

IGBT Type: Trench Field Stop
Configuration: Dual, Common Source
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 340A
Power - Max: 1250W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 20nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고7,312

Dual, Common Source

1700V

340A

1250W

2.4V @ 15V, 225A

500µA

20nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

MDI200-12A4

IXYS

MOD IGBT BUCK 1200V 270A Y3-DCB

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 270A
Power - Max: 1130W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
Current - Collector Cutoff (Max): 10mA
Input Capacitance (Cies) @ Vce: 11nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Supplier Device Package: Y3-DCB

패키지: Y3-DCB

재고7,536

Single

1200V

270A

1130W

2.7V @ 15V, 150A

10mA

11nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Y3-DCB

MWI50-12A7T

IXYS

MOD IGBT SIXPACK RBSOA 1200V E2

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Power - Max: 350W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고7,296

Three Phase Inverter

1200V

85A

350W

2.7V @ 15V, 50A

4mA

3.3nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

E2

FF150R12KE3G

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 150A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,744

-

APTGT300SK60G

Microsemi Corporation

IGBT 600V 430A 1150W SP6

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 430A
Power - Max: 1150W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
Current - Collector Cutoff (Max): 350µA
Input Capacitance (Cies) @ Vce: 24nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고3,392

Single

600V

430A

1150W

1.8V @ 15V, 300A

350µA

24nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

APTGT150H60TG

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP4

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고4,512

Full Bridge Inverter

600V

225A

480W

1.9V @ 15V, 150A

250µA

9.2nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP4

MWI25-12A7T

IXYS

MOD IGBT SIXPACK RBSOA 1200V E2

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Power - Max: 225W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고5,904

Three Phase Inverter

1200V

50A

225W

2.7V @ 15V, 25A

2mA

1.65nF @ 25V

Standard

Yes

-40°C ~ 125°C (TJ)

Chassis Mount

E2

MIXA20WB1200TED

IXYS

IGBT MODULE 1200V 20A HEX

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 28A
Power - Max: 100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A
Current - Collector Cutoff (Max): 1.5mA
Input Capacitance (Cies) @ Vce: -
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고2,496

Three Phase Inverter with Brake

1200V

28A

100W

2.1V @ 15V, 16A

1.5mA

-

Three Phase Bridge Rectifier

Yes

-40°C ~ 125°C (TJ)

Chassis Mount

E2

FS10R12VT3

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 10A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,704

-

APTGT50SK170T1G

Microsemi Corporation

IGBT 1700V 75A 312W SP1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 75A
Power - Max: 312W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고3,680

Single

1700V

75A

312W

2.4V @ 15V, 50A

250µA

4.4nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

IXYN100N120C3

IXYS

IGBT XPT 1200V 152A SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 152A
Power - Max: 830W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Current - Collector Cutoff (Max): 25µA
Input Capacitance (Cies) @ Vce: 6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고7,520

Single

1200V

152A

830W

3.5V @ 15V, 100A

25µA

6nF @ 25V

Standard

No

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

CM200DU-12F

Powerex Inc.

IGBT MOD DUAL 600V 200A F SER

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 590W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 54nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,776

Half Bridge

600V

200A

590W

2.2V @ 15V, 200A

1mA

54nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

BSM10GP120B9BOSA1

Infineon Technologies

IGBT MODULE 1200V

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 20 A
Power - Max: 100 W
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1200 V

20 A

100 W

2.85V @ 15V, 10A

500 µA

600 pF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 125°C

Chassis Mount

Module

FP100R07N2E4BPSA1

Infineon Technologies

LOW POWER ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FF600R12ME4AB11BOSA1

Infineon Technologies

IGBT MODULE 1200V 3350W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Power - Max: 3350 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고15

2 Independent

1200 V

-

3350 W

2.1V @ 15V, 600A

3 mA

37 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

BSM200GA120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 370A 1450W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 370 A
Power - Max: 1450 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

1200 V

370 A

1450 W

2.6V @ 15V, 200A

5 mA

13 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

BSM100GB120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 100A 830W

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 830 W
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge

1200 V

100 A

830 W

-

Standard

Yes

-40°C ~ 125°C

Chassis Mount

Module

MSCGLQ75X120CTYZBNMG

Microchip Technology

PM-IGBT-SBD-NHPD

IGBT Type: -
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 452 W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4400 pF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

Three Phase Inverter with Brake

1200 V

150 A

452 W

2.4V @ 15V, 75A

50 µA

4400 pF @ 25 V

Three Phase Bridge Rectifier

Yes

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

FF650R17IE4VBOSA1

Infineon Technologies

IGBT MODULE 1700V 4150W

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): -
Power - Max: 4150 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

2 Independent

1700 V

-

4150 W

2.45V @ 15V, 650A

5 mA

54 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

PCHMB200W12

KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Power - Max: 961 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19000 pF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

1200 V

200 A

961 W

2V @ 15V, 200A

1 mA

19000 pF @ 25 V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

NXH35C120L2C2SG

onsemi

IGBT MODULE, CIB 1200 V, 35 A IG

IGBT Type: -
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package: 26-DIP

패키지: -

Request a Quote

Three Phase Inverter with Brake

1200 V

35 A

20 mW

2.4V @ 15V, 35A

250 µA

8.33 nF @ 20 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Through Hole

26-PowerDIP Module (1.199", 47.20mm)

26-DIP

FP150R12KT4B11BPSA1

Infineon Technologies

IGBT MODULE 1200V 150A

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1200 V

150 A

-

2.1V @ 15V, 150A

1 mA

9.35 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

6MS24017E33W32859NOSA1

Infineon Technologies

IGBT MODULE 9980W STACK A-MS3-1

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: 9980 W
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -25°C ~ 55°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

-

9980 W

-

Standard

Yes

-25°C ~ 55°C

Chassis Mount

Module