트랜지스터 - IGBT - 단일

IRG4BC30F

Infineon Technologies

IGBT 600V 31A 100W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
• Power - Max: 100W
• Switching Energy: 230µJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 21ns/200ns
• Test Condition: 480V, 17A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

STGB35N35LZ-1

STMicroelectronics

IGBT 345V 40A 176W I2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 345V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 15A
• Power - Max: 176W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 49nC
• Td (on/off) @ 25°C: 1.1µs/26.5µs
• Test Condition: 300V, 15A, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: I2PAK

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

SGS5N60RUFDTU

Fairchild/ON Semiconductor

IGBT 600V 8A 35W TO220F

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 15A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
• Power - Max: 35W
• Switching Energy: 88µJ (on), 107µJ (off)
• Input Type: Standard
• Gate Charge: 16nC
• Td (on/off) @ 25°C: 13ns/34ns
• Test Condition: 300V, 5A, 40 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

NGB15N41CLT4

ON Semiconductor

IGBT 440V 15A 107W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
• Power - Max: 107W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/4µs
• Test Condition: 300V, 6.5A, 1 kOhm
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MMIX1G120N120A3V1

IXYS

IGBT 1200V 220A 400W SMPD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 220A
• Current - Collector Pulsed (Icm): 700A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
• Power - Max: 400W
• Switching Energy: 10mJ (on), 33mJ (off)
• Input Type: Standard
• Gate Charge: 420nC
• Td (on/off) @ 25°C: 40ns/490ns
• Test Condition: 960V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): 700ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerSMD, 21 Leads
• Supplier Device Package: SMPD

패키지: 24-PowerSMD, 21 Leads

IXGH17N100A

IXYS

IGBT 1000V 34A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
• Power - Max: 150W
• Switching Energy: 3mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 100ns/500ns
• Test Condition: 800V, 17A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

NGTB50N65S1WG

ON Semiconductor

IGBT TRENCH 650V 140A TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
• Power - Max: 300W
• Switching Energy: 1.25mJ (on), 530µJ (off)
• Input Type: Standard
• Gate Charge: 128nC
• Td (on/off) @ 25°C: 75ns/128ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

AOK15B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 30A 167W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
• Power - Max: 167W
• Switching Energy: 510µJ (on), 110µJ (off)
• Input Type: Standard
• Gate Charge: 25.4nC
• Td (on/off) @ 25°C: 23ns/74ns
• Test Condition: 400V, 15A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 196ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

APT25GN120BG

Microsemi Corporation

IGBT 1200V 67A 272W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 67A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 272W
• Switching Energy: 2.15µJ (off)
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 22ns/280ns
• Test Condition: 800V, 25A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

패키지: TO-247-3

NGTB40N120L3WG

ON Semiconductor

IGBT 1200V 160A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 454W
• Switching Energy: 1.5mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 18ns/150ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 86ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

IXBH20N300

IXYS

IGBT 3000V 50A 250W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 105nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.35µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

STGW15M120DF3

STMicroelectronics

IGBT 1200V 30A 259W

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
• Power - Max: 259W
• Switching Energy: 550µJ (on), 850µJ (off)
• Input Type: Standard
• Gate Charge: 226nC
• Td (on/off) @ 25°C: 26ns/122ns
• Test Condition: 600V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 270ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

STGW50HF60S

STMicroelectronics

IGBT 600V 110A 284W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 110A
• Current - Collector Pulsed (Icm): 130A
• Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
• Power - Max: 284W
• Switching Energy: 250µJ (on), 4.2mJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 50ns/220ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

IRGB4061DPBF

Infineon Technologies

IGBT 600V 36A 206W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
• Power - Max: 206W
• Switching Energy: 95µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 35nC
• Td (on/off) @ 25°C: 40ns/105ns
• Test Condition: 400V, 18A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IRG7PH42UPBF

Infineon Technologies

IGBT 1200V 90A 385W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 385W
• Switching Energy: 2.11mJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 25ns/229ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IKW40N65F5FKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 360µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 19ns/160ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

IRGS30B60KTRRP

Infineon Technologies

IGBT 600V 78A 370W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
• Power - Max: 370W
• Switching Energy: 350µJ (on), 825µJ (off)
• Input Type: Standard
• Gate Charge: 102nC
• Td (on/off) @ 25°C: 46ns/185ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGP30M65DF2

STMicroelectronics

IGBT 650V 30A TO-220AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 258W
• Switching Energy: 300µJ (on), 960µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 31.6ns/115ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

패키지: TO-220-3

RJP4002ANS-00-Q1

Renesas Electronics Corporation

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote

LGB8202ATI

Littelfuse Inc.

IGBT 440V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote

LGB8206ARI

Littelfuse Inc.

IGBT 390V 20A 150W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote

IGW60T120FKSA1

Infineon Technologies

IGBT TRENCH 1200V 100A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
• Power - Max: 375 W
• Switching Energy: 9.5mJ
• Input Type: Standard
• Gate Charge: 280 nC
• Td (on/off) @ 25°C: 50ns/480ns
• Test Condition: 600V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

패키지: -

APT75GN60SDQ2G

Microchip Technology

IGBT TRENCH FS 600V 155A D3PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 155 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
• Power - Max: 536 W
• Switching Energy: 2.5mJ (on), 2.14mJ (off)
• Input Type: Standard
• Gate Charge: 485 nC
• Td (on/off) @ 25°C: 47ns/385ns
• Test Condition: 400V, 75A, 1Ohm, 15V
• Reverse Recovery Time (trr): 25 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3PAK

패키지: -

SIGC14T60SNCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 31ns/261ns
• Test Condition: 400V, 15A, 21Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

Request a Quote

RGW60NL65DHRBTL

Rohm Semiconductor

IGBT TRENCH FS 650V 67A TO263L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 67 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 187 W
• Switching Energy: 180µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 84 nC
• Td (on/off) @ 25°C: 34ns/122ns
• Test Condition: 400V, 15A, 10Ohm, 15V
• Reverse Recovery Time (trr): 96 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263L

패키지: -

Request a Quote

GT50N322A

Toshiba Semiconductor and Storage

IGBT 1000V 50A TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
• Power - Max: 156 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 800 ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P(N)

패키지: -

MGF65A6H

Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/60

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 60A
• Power - Max: 405 W
• Switching Energy: 1.4mJ (on), 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 110 nC
• Td (on/off) @ 25°C: 50ns/130ns
• Test Condition: 400V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): 50 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P-3L

패키지: -

Request a Quote

SIGC15T60EX1SA1

Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

Request a Quote