페이지 30 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  30/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P75N65UD1PBF
Infineon Technologies

G8 650V 75A CO-PAK-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,496
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot NGTB15N120IHLWG
ON Semiconductor

IGBT 1200V 30A 156W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 156W
  • Switching Energy: 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: -/165ns
  • Test Condition: 600V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고4,432
1200V
30A
120A
2.2V @ 15V, 15A
156W
560µJ (off)
Standard
160nC
-/165ns
600V, 15A, 15 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGD8201NT4G
ON Semiconductor

IGBT 440V 20A 125W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고337,416
440V
20A
50A
1.9V @ 4.5V, 20A
125W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
IXSH25N120A
IXYS

IGBT 1200V 50A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 200W
  • Switching Energy: 9.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 100ns/450ns
  • Test Condition: 960V, 25A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
패키지: TO-247-3
재고5,280
1200V
50A
80A
4V @ 15V, 25A
200W
9.6mJ (off)
Standard
120nC
100ns/450ns
960V, 25A, 18 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
IXGT30N60C2
IXYS

IGBT 600V 70A 190W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 13ns/70ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,424
600V
70A
150A
2.7V @ 15V, 24A
190W
290µJ (off)
Standard
70nC
13ns/70ns
400V, 24A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot FGPF70N30
Fairchild/ON Semiconductor

IGBT 300V 52W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
  • Power - Max: 52W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 71nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고103,464
300V
-
160A
1.5V @ 15V, 20A
52W
-
Standard
71nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot IRG4PC30KPBF
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 360µJ (on), 510µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고18,000
600V
28A
58A
2.7V @ 15V, 16A
100W
360µJ (on), 510µJ (off)
Standard
67nC
26ns/130ns
480V, 16A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7CH30K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.56V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 4.8nC
  • Td (on/off) @ 25°C: 10ns/90ns
  • Test Condition: 600V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고2,288
1200V
10A
-
2.56V @ 15V, 10A
-
-
Standard
4.8nC
10ns/90ns
600V, 10A, 22 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKD10N60RAATMA2
Infineon Technologies

IGBT 600V 20A 150W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,912
600V
20A
30A
2.1V @ 15V, 10A
150W
-
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
APT44GA60BD30
Microsemi Corporation

IGBT 600V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
  • Power - Max: 337W
  • Switching Energy: 409µJ (on), 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 16ns/84ns
  • Test Condition: 400V, 26A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고4,560
600V
78A
130A
2.5V @ 15V, 26A
337W
409µJ (on), 258µJ (off)
Standard
128nC
16ns/84ns
400V, 26A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGA15N100C
IXYS

IGBT 1000V 30A 150W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,136
1000V
30A
60A
3.5V @ 15V, 15A
150W
850µJ (off)
Standard
73nC
25ns/150ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IXYH75N65C3
IXYS

IGBT 650V 170A 750W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750W
  • Switching Energy: 2.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 123nC
  • Td (on/off) @ 25°C: 27ns/93ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고3,616
650V
170A
360A
2.3V @ 15V, 60A
750W
2.8mJ (on), 1mJ (off)
Standard
123nC
27ns/93ns
400V, 60A, 3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
GPA030A135MN-FDR
Global Power Technologies Group

IGBT 1350V 60A 329W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 329W
  • Switching Energy: 4.4mJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 300nC
  • Td (on/off) @ 25°C: 30ns/145ns
  • Test Condition: 600V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 450ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3PN
패키지: TO-3
재고2,352
1350V
60A
90A
2.4V @ 15V, 30A
329W
4.4mJ (on), 1.18mJ (off)
Standard
300nC
30ns/145ns
600V, 30A, 5 Ohm, 15V
450ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-3PN
IXXK100N60B3H1
IXYS

IGBT 600V 200A 695W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 440A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
  • Power - Max: 695W
  • Switching Energy: 1.9mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 143nC
  • Td (on/off) @ 25°C: 30ns/120ns
  • Test Condition: 360V, 70A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA Variation
  • Supplier Device Package: TO-264 (IXXK)
패키지: TO-264-3, TO-264AA Variation
재고6,608
600V
200A
440A
1.8V @ 15V, 70A
695W
1.9mJ (on), 2mJ (off)
Standard
143nC
30ns/120ns
360V, 70A, 2 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA Variation
TO-264 (IXXK)
hot FGH40T65UPD
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.59mJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 177nC
  • Td (on/off) @ 25°C: 20ns/144ns
  • Test Condition: 400V, 40A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고103,464
650V
80A
120A
2.3V @ 15V, 40A
268W
1.59mJ (on), 580µJ (off)
Standard
177nC
20ns/144ns
400V, 40A, 7 Ohm, 15V
43ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AOB10B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 10A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 180µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 262ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,120
650V
20A
30A
2V @ 15V, 10A
150W
180µJ (on), 130µJ (off)
Standard
24nC
12ns/91ns
400V, 10A, 30 Ohm, 15V
262ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
hot FGPF10N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 20A 42W TO-220F

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
  • Power - Max: 42W
  • Switching Energy: 150µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 8ns/52.2ns
  • Test Condition: 400V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37.7ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
패키지: TO-220-3 Full Pack
재고103,704
600V
20A
30A
2.45V @ 15V, 10A
42W
150µJ (on), 50µJ (off)
Standard
37nC
8ns/52.2ns
400V, 10A, 10 Ohm, 15V
37.7ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3
hot SGP23N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 23A 100W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고73,080
600V
23A
92A
2.6V @ 15V, 12A
100W
115µJ (on), 135µJ (off)
Standard
-
17ns/60ns
300V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot STGP14NC60KD
STMicroelectronics

IGBT 600V 25A 80W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 82µJ (on), 155µJ (off)
  • Input Type: Standard
  • Gate Charge: 34.4nC
  • Td (on/off) @ 25°C: 22.5ns/116ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고274,164
600V
25A
50A
2.5V @ 15V, 7A
80W
82µJ (on), 155µJ (off)
Standard
34.4nC
22.5ns/116ns
390V, 7A, 10 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGP4640PBF
Infineon Technologies

IGBT 600V 65A 250W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 100µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고7,620
600V
65A
72A
1.9V @ 15V, 24A
250W
100µJ (on), 600µJ (off)
Standard
75nC
40ns/105ns
400V, 24A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
NGTB40N65IHL2WG
ON Semiconductor

IGBT 650V 40A TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 360µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: -/140ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 465ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,648
650V
80A
160A
2.2V @ 15V, 40A
300W
360µJ (off)
Standard
135nC
-/140ns
400V, 40A, 10 Ohm, 15V
465ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGB40T65SPD_F085
Fairchild/ON Semiconductor

IGBT FIELD STOP 650V 80A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 970µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 36nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,872
650V
80A
120A
2.4V @ 15V, 40A
267W
970µJ (on), 280µJ (off)
Standard
36nC
18ns/35ns
400V, 40A, 6 Ohm, 15V
34ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
AOD8B65MQ1
Alpha & Omega Semiconductor Inc.

IGBT 8A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 8A
  • Power - Max: 89 W
  • Switching Energy: 160µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 8.5ns/102ns
  • Test Condition: 400V, 8A, 37.5Ohm, 15V
  • Reverse Recovery Time (trr): 94 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
Request a Quote
650 V
16 A
24 A
2.25V @ 15V, 8A
89 W
160µJ (on), 110µJ (off)
Standard
22 nC
8.5ns/102ns
400V, 8A, 37.5Ohm, 15V
94 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
IKN06N60RC2ATMA1
Infineon Technologies

IGBT 600V 8A SOT223-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
  • Power - Max: 7.2 W
  • Switching Energy: 151µJ (on), 104µJ (off)
  • Input Type: Standard
  • Gate Charge: 31 nC
  • Td (on/off) @ 25°C: 8.8ns/174ns
  • Test Condition: 400V, 6A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-3
패키지: -
재고17,028
600 V
8 A
18 A
2.3V @ 15V, 6A
7.2 W
151µJ (on), 104µJ (off)
Standard
31 nC
8.8ns/174ns
400V, 6A, 49Ohm, 15V
42 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-3
FGH40T65SHDF-F155
onsemi

IGBT FIELD STOP 650V 80A TO247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268 W
  • Switching Energy: 1.22mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 68 nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 101 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,029
650 V
80 A
120 A
1.81V @ 15V, 40A
268 W
1.22mJ (on), 440µJ (off)
Standard
68 nC
18ns/64ns
400V, 40A, 6Ohm, 15V
101 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRG4CC40FB
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
-
-
1.6V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
RGS60TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 56A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 56 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 223 W
  • Switching Energy: 660µJ (on), 810µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 28ns/104ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
56 A
90 A
2.1V @ 15V, 30A
223 W
660µJ (on), 810µJ (off)
Standard
36 nC
28ns/104ns
400V, 30A, 10Ohm, 15V
103 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
GT20J341-S4X-S
Toshiba Semiconductor and Storage

DISCRETE IGBT TRANSISTOR TO-220S

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 45 W
  • Switching Energy: 500µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 60ns/240ns
  • Test Condition: 300V, 20A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
패키지: -
재고84
600 V
20 A
80 A
2V @ 15V, 20A
45 W
500µJ (on), 400µJ (off)
Standard
-
60ns/240ns
300V, 20A, 33Ohm, 15V
90 ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220SIS