페이지 53 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  53/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRG4BC10KPBF
Infineon Technologies

IGBT 600V 9A 38W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 160µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 11ns/51ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고74,808
600V
9A
18A
2.62V @ 15V, 5A
38W
160µJ (on), 100µJ (off)
Standard
19nC
11ns/51ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUP213
Infineon Technologies

IGBT 1200V 32A 200W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 70ns/400ns
  • Test Condition: 600V, 15A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,960
1200V
32A
64A
3.2V @ 15V, 15A
200W
-
Standard
-
70ns/400ns
600V, 15A, 82 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGR40N60C2D1
IXYS

IGBT 600V 56A 170W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 170W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 18ns/90ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고6,384
600V
56A
200A
2.7V @ 15V, 30A
170W
200µJ (off)
Standard
95nC
18ns/90ns
400V, 30A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
SGL40N150DTU
Fairchild/ON Semiconductor

IGBT 1500V 40A 200W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1500V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 40A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 300ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고5,312
1500V
40A
120A
4.7V @ 15V, 40A
200W
-
Standard
140nC
-
-
300ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
SGS5N150UFTU
Fairchild/ON Semiconductor

IGBT 1500V 10A 50W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1500V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 5.5V @ 10V, 5A
  • Power - Max: 50W
  • Switching Energy: 190µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 10ns/30ns
  • Test Condition: 600V, 5A, 10 Ohm, 10V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고2,784
1500V
10A
20A
5.5V @ 10V, 5A
50W
190µJ (on), 100µJ (off)
Standard
30nC
10ns/30ns
600V, 5A, 10 Ohm, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot IRGP4063PBF
Infineon Technologies

IGBT 600V 96A 330W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고105,144
600V
96A
144A
2.14V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
95nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IGW40N60H3FKSA1
Infineon Technologies

IGBT 600V 80A 306W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 306W
  • Switching Energy: 1.68mJ
  • Input Type: Standard
  • Gate Charge: 223nC
  • Td (on/off) @ 25°C: 19ns/197ns
  • Test Condition: 400V, 40A, 7.9 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고4,000
600V
80A
160A
2.4V @ 15V, 40A
306W
1.68mJ
Standard
223nC
19ns/197ns
400V, 40A, 7.9 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRGS30B60KPBF
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,072
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGH24N170A
IXYS

IGBT 1700V 24A 250W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
  • Power - Max: 250W
  • Switching Energy: 2.97mJ (on), 790µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 21ns/336ns
  • Test Condition: 850V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,904
1700V
24A
75A
6V @ 15V, 16A
250W
2.97mJ (on), 790µJ (off)
Standard
140nC
21ns/336ns
850V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGT20N100
IXYS

IGBT 1000V 40A 150W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 30ns/350ns
  • Test Condition: 800V, 20A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고6,736
1000V
40A
80A
3V @ 15V, 20A
150W
3.5mJ (off)
Standard
73nC
30ns/350ns
800V, 20A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
STGWF40V60DF
STMicroelectronics

IGBT BIPO 600V 40A TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: 456µJ (on), 411µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PF
패키지: TO-3PFM, SC-93-3
재고2,640
600V
40A
-
-
-
456µJ (on), 411µJ (off)
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PF
hot IRG4PC50UDPBF
Infineon Technologies

IGBT 600V 55A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 990µJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 46ns/140ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고89,736
600V
55A
220A
2V @ 15V, 27A
200W
990µJ (on), 590µJ (off)
Standard
180nC
46ns/140ns
480V, 27A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
SGF5N150UFTU
Fairchild/ON Semiconductor

IGBT 1500V 10A 62.5W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1500V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 5.5V @ 10V, 5A
  • Power - Max: 62.5W
  • Switching Energy: 190µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 10ns/30ns
  • Test Condition: 600V, 5A, 10 Ohm, 10V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
패키지: SC-94
재고6,648
1500V
10A
20A
5.5V @ 10V, 5A
62.5W
190µJ (on), 100µJ (off)
Standard
30nC
10ns/30ns
600V, 5A, 10 Ohm, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
IGP30N60H3XKSA1
Infineon Technologies

IGBT 600V 60A 187W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.17mJ
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고13,320
600V
60A
120A
2.4V @ 15V, 30A
187W
1.17mJ
Standard
165nC
18ns/207ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
AOB15B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Power - Max: 214W
  • Switching Energy: 290µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 13ns/116ns
  • Test Condition: 400V, 15A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 317ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,328
650V
30A
45A
2.15V @ 15V, 15A
214W
290µJ (on), 200µJ (off)
Standard
32nC
13ns/116ns
400V, 15A, 20 Ohm, 15V
317ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
hot STGD10NC60KDT4
STMicroelectronics

IGBT 600V 20A 62W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 62W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고93,600
600V
20A
30A
2.5V @ 15V, 5A
62W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 5A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot STGB19NC60HDT4
STMicroelectronics

IGBT 600V 40A 130W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 130W
  • Switching Energy: 85µJ (on), 189µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 25ns/97ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고390,000
600V
40A
60A
2.5V @ 15V, 12A
130W
85µJ (on), 189µJ (off)
Standard
53nC
25ns/97ns
390V, 12A, 10 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
HGT1S12N60C3
Harris Corporation

27A, 600V, UFS N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
  • Power - Max: 104 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
패키지: -
Request a Quote
600 V
24 A
96 A
2V @ 15V, 12A
104 W
-
Standard
62 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
STGP8H60DF2
STMicroelectronics

Linear IC's

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AFGHL50T65SQ
onsemi

AEC 101 QUALIFIED, 650V, 50A FIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 268 W
  • Switching Energy: 950µJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 99 nC
  • Td (on/off) @ 25°C: 20ns/81ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고2,040
650 V
80 A
200 A
2.1V @ 15V, 50A
268 W
950µJ (on), 460µJ (off)
Standard
99 nC
20ns/81ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
HGT1S20N36G3VLS
Fairchild Semiconductor

IGBT, 37.7A, 355V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 415 V
  • Current - Collector (Ic) (Max): 37.7 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 5V, 20A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 28.7 nC
  • Td (on/off) @ 25°C: -/15µs
  • Test Condition: 300V, 10A, 25Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: -
Request a Quote
415 V
37.7 A
-
1.9V @ 5V, 20A
150 W
-
Logic
28.7 nC
-/15µs
300V, 10A, 25Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
FGH75T65SHDTLN4
onsemi

FS3 T TO247 75A 650V 4WL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455 W
  • Switching Energy: 1.06mJ (on), 1.56mJ (off)
  • Input Type: Standard
  • Gate Charge: 126 nC
  • Td (on/off) @ 25°C: 55ns/189ns
  • Test Condition: 400V, 75A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 36 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4
패키지: -
Request a Quote
650 V
150 A
300 A
2.1V @ 15V, 75A
455 W
1.06mJ (on), 1.56mJ (off)
Standard
126 nC
55ns/189ns
400V, 75A, 15Ohm, 15V
36 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
AOGF60B65H2AL
Alpha & Omega Semiconductor Inc.

IGBT 60A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 74 W
  • Switching Energy: 2.36mJ (on), 1.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 35ns/168ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 318 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
패키지: -
Request a Quote
650 V
120 A
180 A
2.5V @ 15V, 60A
74 W
2.36mJ (on), 1.17mJ (off)
Standard
84 nC
35ns/168ns
400V, 60A, 5Ohm, 15V
318 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
IKY75N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 83A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 83 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 549 W
  • Switching Energy: 1.81mJ (on), 2.02mJ (off)
  • Input Type: Standard
  • Gate Charge: 550 nC
  • Td (on/off) @ 25°C: 42ns/367ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U10
패키지: -
재고720
1200 V
83 A
300 A
2.15V @ 15V, 75A
549 W
1.81mJ (on), 2.02mJ (off)
Standard
550 nC
42ns/367ns
-
90 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U10
IKU06N60R
Infineon Technologies

IGBT TRENCH 600V 12A TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100 W
  • Switching Energy: 330µJ
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 68 ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: PG-TO251-3
패키지: -
Request a Quote
600 V
12 A
18 A
2.1V @ 15V, 6A
100 W
330µJ
Standard
48 nC
12ns/127ns
400V, 6A, 23Ohm, 15V
68 ns
-
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
RGW50TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 156 W
  • Switching Energy: 390µJ (on), 430µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 35ns/102ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
50 A
100 A
1.9V @ 15V, 25A
156 W
390µJ (on), 430µJ (off)
Standard
73 nC
35ns/102ns
400V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXYP30N120B4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NGD8201TH
Littelfuse Inc.

IGBT 400V 20A 125W DPAK-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-