페이지 64 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

SKW07N120FKSA1

Infineon Technologies

IGBT 1200V 16.5A 125W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 16.5A
Current - Collector Pulsed (Icm): 27A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Power - Max: 125W
Switching Energy: 1mJ
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 27ns/440ns
Test Condition: 800V, 8A, 47 Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고3,680

1200V

16.5A

27A

3.6V @ 15V, 8A

125W

1mJ

Standard

70nC

27ns/440ns

800V, 8A, 47 Ohm, 15V

60ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IRGSL6B60KPBF

Infineon Technologies

IGBT 600V 13A 90W TO262

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 26A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Power - Max: 90W
Switching Energy: 110µJ (on), 135µJ (off)
Input Type: Standard
Gate Charge: 18.2nC
Td (on/off) @ 25°C: 25ns/215ns
Test Condition: 400V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고7,984

600V

13A

26A

2.2V @ 15V, 5A

90W

110µJ (on), 135µJ (off)

Standard

18.2nC

25ns/215ns

400V, 5A, 100 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262

IRG4PSH71KPBF

Infineon Technologies

IGBT 1200V 78A 350W SUPER247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 156A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
Power - Max: 350W
Switching Energy: 2.35mJ (on), 3.14mJ (off)
Input Type: Standard
Gate Charge: 410nC
Td (on/off) @ 25°C: 45ns/220ns
Test Condition: 960V, 42A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: SUPER-247 (TO-274AA)

패키지: TO-274AA

재고53,124

1200V

78A

156A

3.9V @ 15V, 42A

350W

2.35mJ (on), 3.14mJ (off)

Standard

410nC

45ns/220ns

960V, 42A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-274AA

SUPER-247 (TO-274AA)

RJH1CF6RDPQ-80#T2

Renesas Electronics America

IGBT 1200V 55A 227.2W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Power - Max: 227.2W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고2,544

1200V

55A

-

2.3V @ 15V, 30A

227.2W

-

Standard

-

150°C (TJ)

Through Hole

TO-247-3

IXGR60N60B2D1

IXYS

IGBT 600V 75A 250W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 250W
Switching Energy: 1mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 28ns/160ns
Test Condition: 400V, 50A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247?

패키지: TO-247-3

재고3,376

600V

75A

300A

2V @ 15V, 50A

250W

1mJ (off)

Standard

170nC

28ns/160ns

400V, 50A, 3.3 Ohm, 15V

35ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

ISOPLUS247?

HGTP2N120CN

Fairchild/ON Semiconductor

IGBT 1200V 13A 104W TO220AB

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 20A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Power - Max: 104W
Switching Energy: 96µJ (on), 355µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 25ns/205ns
Test Condition: 960V, 2.6A, 51 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고179,580

1200V

13A

20A

2.4V @ 15V, 2.6A

104W

96µJ (on), 355µJ (off)

Standard

30nC

25ns/205ns

960V, 2.6A, 51 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGH50N60A

IXYS

IGBT 600V 75A 250W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Power - Max: 250W
Switching Energy: 4.8mJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 480V, 50A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고7,696

600V

75A

200A

2.7V @ 15V, 50A

250W

4.8mJ (off)

Standard

200nC

50ns/200ns

480V, 50A, 2.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

IGB50N65H5ATMA1

Infineon Technologies

IGBT PRODUCTS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,632

-

IXYF30N450

IXYS

IGBT 450V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 4500V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 190A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Power - Max: 230W
Switching Energy: -
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5 (3 leads)

재고2,848

4500V

23A

190A

3.9V @ 15V, 30A

230W

-

Standard

88nC

38ns/168ns

960V, 30A, 15 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5 (3 leads)

ISOPLUS i4-PAC?

IXBH14N250

IXYS

IGBT 2500V TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

재고3,408

2500V

-

Standard

-

Through Hole

TO-247-3

TO-247AD (IXBH)

IXGR55N120A3H1

IXYS

IGBT 1200V 70A 200W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 330A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Power - Max: 200W
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Input Type: Standard
Gate Charge: 185nC
Td (on/off) @ 25°C: 23ns/365ns
Test Condition: 960V, 55A, 3 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247?

패키지: TO-247-3

재고3,344

1200V

70A

330A

2.35V @ 15V, 55A

200W

5.1mJ (on), 13.3mJ (off)

Standard

185nC

23ns/365ns

960V, 55A, 3 Ohm, 15V

200ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

ISOPLUS247?

IXGH28N120BD1

IXYS

IGBT 1200V 50A 250W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Power - Max: 250W
Switching Energy: 2.2mJ (off)
Input Type: Standard
Gate Charge: 92nC
Td (on/off) @ 25°C: 30ns/210ns
Test Condition: 960V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고480,156

1200V

50A

150A

3.5V @ 15V, 28A

250W

2.2mJ (off)

Standard

92nC

30ns/210ns

960V, 28A, 5 Ohm, 15V

40ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

APT15GP60BDLG

Microsemi Corporation

IGBT 600V 56A 250W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 56A
Current - Collector Pulsed (Icm): 65A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Power - Max: 250W
Switching Energy: 130µJ (on), 121µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 8ns/29ns
Test Condition: 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,960

600V

56A

65A

2.7V @ 15V, 15A

250W

130µJ (on), 121µJ (off)

Standard

55nC

8ns/29ns

400V, 15A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

STGP20M65DF2

STMicroelectronics

IGBT TRENCH 650V 40A TO220

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 166W
Switching Energy: 140µJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 63nC
Td (on/off) @ 25°C: 26ns/108ns
Test Condition: 400V, 20A, 12 Ohm, 15V
Reverse Recovery Time (trr): 166ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고5,344

650V

40A

80A

2V @ 15V, 20A

166W

140µJ (on), 560µJ (off)

Standard

63nC

26ns/108ns

400V, 20A, 12 Ohm, 15V

166ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

APT54GA60B

Microsemi Corporation

IGBT 600V 96A 416W TO-247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 96A
Current - Collector Pulsed (Icm): 161A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Power - Max: 416W
Switching Energy: 534µJ (on), 466µJ (off)
Input Type: Standard
Gate Charge: 158nC
Td (on/off) @ 25°C: 17ns/112ns
Test Condition: 400V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

패키지: TO-247-3

재고4,736

600V

96A

161A

2.5V @ 15V, 32A

416W

534µJ (on), 466µJ (off)

Standard

158nC

17ns/112ns

400V, 32A, 4.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

AOK40B65H1

Alpha & Omega Semiconductor Inc.

IGBT 650V 40A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 300W
Switching Energy: 1.27mJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 63nC
Td (on/off) @ 25°C: 41ns/130ns
Test Condition: 400V, 40A, 7.5 Ohm, 15V
Reverse Recovery Time (trr): 346ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,372

650V

80A

120A

2.4V @ 15V, 40A

300W

1.27mJ (on), 460µJ (off)

Standard

63nC

41ns/130ns

400V, 40A, 7.5 Ohm, 15V

346ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB40N120IHRWG

ON Semiconductor

IGBT 1200V 80A 384W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
Power - Max: 384W
Switching Energy: 950µJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: -/230ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,660

1200V

80A

120A

2.55V @ 15V, 40A

384W

950µJ (off)

Standard

225nC

-/230ns

600V, 40A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

HGTP10N50E1D

Harris Corporation

17.5A, 500V, N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 17.5 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Power - Max: 75 W
Switching Energy: -
Input Type: Standard
Gate Charge: 19 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

500 V

17.5 A

-

3.2V @ 20V, 17.5A

75 W

-

Standard

19 nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

IXGA20N120B3-TRL

IXYS

IXGA20N120B3 TRL

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Power - Max: 180 W
Switching Energy: 920µJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 51 nC
Td (on/off) @ 25°C: 16ns/150ns
Test Condition: 600V, 16A, 15Ohm, 15V
Reverse Recovery Time (trr): 31 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

패키지: -

Request a Quote

1200 V

36 A

80 A

3.1V @ 15V, 16A

180 W

920µJ (on), 560µJ (off)

Standard

51 nC

16ns/150ns

600V, 16A, 15Ohm, 15V

31 ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

MGY40N60

onsemi

IGBT 66A, 600V, N CHANNEL, TO 26

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IXXT100N75B4HV

IXYS

IGBT DISCRETE TO-268HV

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

AOK50B65H1

Alpha & Omega Semiconductor Inc.

IGBT 650V 50A TO-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Power - Max: 375 W
Switching Energy: 1.92mJ (on), 850µJ (off)
Input Type: Standard
Gate Charge: 76 nC
Td (on/off) @ 25°C: 37ns/141ns
Test Condition: 400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr): 261 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: -

Request a Quote

650 V

100 A

150 A

2.4V @ 15V, 50A

375 W

1.92mJ (on), 850µJ (off)

Standard

76 nC

37ns/141ns

400V, 50A, 6Ohm, 15V

261 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

SIGC11T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 28ns/198ns
Test Condition: 400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

10 A

30 A

2.4V @ 15V, 10A

-

Standard

-

28ns/198ns

400V, 10A, 25Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKW50N65RH5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 305 W
Switching Energy: 230µJ (on), 180µJ (off)
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 22ns/180ns
Test Condition: 400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: -

재고288

650 V

80 A

200 A

2.1V @ 15V, 50A

305 W

230µJ (on), 180µJ (off)

Standard

120 nC

22ns/180ns

400V, 25A, 12Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

SIGC42T60NCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 43ns/130ns
Test Condition: 300V, 50A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

43ns/130ns

300V, 50A, 3.3Ohm, 15V

-

-55°C ~ 150°C

Surface Mount

Die

AIMDQ75R040M1HXUMA1

Infineon Technologies

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,250

-

AOK30B135D2

Alpha & Omega Semiconductor Inc.

IGBT 1350V 30A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: -

Request a Quote

-

Through Hole

TO-247-3

TO-247

IRGSL15B60KDPBF-INF

Infineon Technologies

IGBT W/ULTRAFAST SOFT RECOVERY D

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Current - Collector Pulsed (Icm): 62 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 208 W
Switching Energy: 220µJ (on), 340µJ (off)
Input Type: Standard
Gate Charge: 56 nC
Td (on/off) @ 25°C: 34ns/184ns
Test Condition: 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262

패키지: -

Request a Quote

600 V

31 A

62 A

2.2V @ 15V, 15A

208 W

220µJ (on), 340µJ (off)

Standard

56 nC

34ns/184ns

400V, 15A, 22Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SKW07N120FKSA1	Infineon Technologies	IGBT 1200V 16.5A 125W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 16.5A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A Power - Max: 125W Switching Energy: 1mJ Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 27ns/440ns Test Condition: 800V, 8A, 47 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고3,680	1200V	16.5A	27A	3.6V @ 15V, 8A	125W	1mJ	Standard	70nC	27ns/440ns	800V, 8A, 47 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRGSL6B60KPBF	Infineon Technologies	IGBT 600V 13A 90W TO262 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고7,984	600V	13A	26A	2.2V @ 15V, 5A	90W	110µJ (on), 135µJ (off)	Standard	18.2nC	25ns/215ns	400V, 5A, 100 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IRG4PSH71KPBF	Infineon Technologies	IGBT 1200V 78A 350W SUPER247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A Power - Max: 350W Switching Energy: 2.35mJ (on), 3.14mJ (off) Input Type: Standard Gate Charge: 410nC Td (on/off) @ 25°C: 45ns/220ns Test Condition: 960V, 42A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247 (TO-274AA)	패키지: TO-274AA	재고53,124	1200V	78A	156A	3.9V @ 15V, 42A	350W	2.35mJ (on), 3.14mJ (off)	Standard	410nC	45ns/220ns	960V, 42A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-274AA	SUPER-247 (TO-274AA)
RJH1CF6RDPQ-80#T2	Renesas Electronics America	IGBT 1200V 55A 227.2W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 227.2W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고2,544	1200V	55A	-	2.3V @ 15V, 30A	227.2W	-	Standard	-	-	-	-	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXGR60N60B2D1	IXYS	IGBT 600V 75A 250W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 250W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 28ns/160ns Test Condition: 400V, 50A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247?	패키지: TO-247-3	재고3,376	600V	75A	300A	2V @ 15V, 50A	250W	1mJ (off)	Standard	170nC	28ns/160ns	400V, 50A, 3.3 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ISOPLUS247?
HGTP2N120CN	Fairchild/ON Semiconductor	IGBT 1200V 13A 104W TO220AB IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Power - Max: 104W Switching Energy: 96µJ (on), 355µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 25ns/205ns Test Condition: 960V, 2.6A, 51 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고179,580	1200V	13A	20A	2.4V @ 15V, 2.6A	104W	96µJ (on), 355µJ (off)	Standard	30nC	25ns/205ns	960V, 2.6A, 51 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH50N60A	IXYS	IGBT 600V 75A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 250W Switching Energy: 4.8mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 480V, 50A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고7,696	600V	75A	200A	2.7V @ 15V, 50A	250W	4.8mJ (off)	Standard	200nC	50ns/200ns	480V, 50A, 2.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IGB50N65H5ATMA1	Infineon Technologies	IGBT PRODUCTS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,632	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXYF30N450	IXYS	IGBT 450V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 4500V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 190A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Power - Max: 230W Switching Energy: - Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 38ns/168ns Test Condition: 960V, 30A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5 (3 leads)	재고2,848	4500V	23A	190A	3.9V @ 15V, 30A	230W	-	Standard	88nC	38ns/168ns	960V, 30A, 15 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5 (3 leads)	ISOPLUS i4-PAC?
IXBH14N250	IXYS	IGBT 2500V TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	패키지: TO-247-3	재고3,408	2500V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-247-3	TO-247AD (IXBH)
IXGR55N120A3H1	IXYS	IGBT 1200V 70A 200W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 330A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A Power - Max: 200W Switching Energy: 5.1mJ (on), 13.3mJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 23ns/365ns Test Condition: 960V, 55A, 3 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247?	패키지: TO-247-3	재고3,344	1200V	70A	330A	2.35V @ 15V, 55A	200W	5.1mJ (on), 13.3mJ (off)	Standard	185nC	23ns/365ns	960V, 55A, 3 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ISOPLUS247?
IXGH28N120BD1	IXYS	IGBT 1200V 50A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A Power - Max: 250W Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: 30ns/210ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고480,156	1200V	50A	150A	3.5V @ 15V, 28A	250W	2.2mJ (off)	Standard	92nC	30ns/210ns	960V, 28A, 5 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
APT15GP60BDLG	Microsemi Corporation	IGBT 600V 56A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,960	600V	56A	65A	2.7V @ 15V, 15A	250W	130µJ (on), 121µJ (off)	Standard	55nC	8ns/29ns	400V, 15A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
STGP20M65DF2	STMicroelectronics	IGBT TRENCH 650V 40A TO220 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 166W Switching Energy: 140µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 26ns/108ns Test Condition: 400V, 20A, 12 Ohm, 15V Reverse Recovery Time (trr): 166ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고5,344	650V	40A	80A	2V @ 15V, 20A	166W	140µJ (on), 560µJ (off)	Standard	63nC	26ns/108ns	400V, 20A, 12 Ohm, 15V	166ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
APT54GA60B	Microsemi Corporation	IGBT 600V 96A 416W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 161A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 416W Switching Energy: 534µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 158nC Td (on/off) @ 25°C: 17ns/112ns Test Condition: 400V, 32A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	패키지: TO-247-3	재고4,736	600V	96A	161A	2.5V @ 15V, 32A	416W	534µJ (on), 466µJ (off)	Standard	158nC	17ns/112ns	400V, 32A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
AOK40B65H1	Alpha & Omega Semiconductor Inc.	IGBT 650V 40A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 300W Switching Energy: 1.27mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 41ns/130ns Test Condition: 400V, 40A, 7.5 Ohm, 15V Reverse Recovery Time (trr): 346ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,372	650V	80A	120A	2.4V @ 15V, 40A	300W	1.27mJ (on), 460µJ (off)	Standard	63nC	41ns/130ns	400V, 40A, 7.5 Ohm, 15V	346ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120IHRWG	ON Semiconductor	IGBT 1200V 80A 384W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A Power - Max: 384W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: -/230ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,660	1200V	80A	120A	2.55V @ 15V, 40A	384W	950µJ (off)	Standard	225nC	-/230ns	600V, 40A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
HGTP10N50E1D	Harris Corporation	17.5A, 500V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 17.5 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A Power - Max: 75 W Switching Energy: - Input Type: Standard Gate Charge: 19 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	500 V	17.5 A	-	3.2V @ 20V, 17.5A	75 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
IXGA20N120B3-TRL	IXYS	IXGA20N120B3 TRL IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 36 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Power - Max: 180 W Switching Energy: 920µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 51 nC Td (on/off) @ 25°C: 16ns/150ns Test Condition: 600V, 16A, 15Ohm, 15V Reverse Recovery Time (trr): 31 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	패키지: -	Request a Quote	1200 V	36 A	80 A	3.1V @ 15V, 16A	180 W	920µJ (on), 560µJ (off)	Standard	51 nC	16ns/150ns	600V, 16A, 15Ohm, 15V	31 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
MGY40N60	onsemi	IGBT 66A, 600V, N CHANNEL, TO 26 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXXT100N75B4HV	IXYS	IGBT DISCRETE TO-268HV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK50B65H1	Alpha & Omega Semiconductor Inc.	IGBT 650V 50A TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Power - Max: 375 W Switching Energy: 1.92mJ (on), 850µJ (off) Input Type: Standard Gate Charge: 76 nC Td (on/off) @ 25°C: 37ns/141ns Test Condition: 400V, 50A, 6Ohm, 15V Reverse Recovery Time (trr): 261 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: -	Request a Quote	650 V	100 A	150 A	2.4V @ 15V, 50A	375 W	1.92mJ (on), 850µJ (off)	Standard	76 nC	37ns/141ns	400V, 50A, 6Ohm, 15V	261 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
SIGC11T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 28ns/198ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	10 A	30 A	2.4V @ 15V, 10A	-	-	Standard	-	28ns/198ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKW50N65RH5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 305 W Switching Energy: 230µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 22ns/180ns Test Condition: 400V, 25A, 12Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: -	재고288	650 V	80 A	200 A	2.1V @ 15V, 50A	305 W	230µJ (on), 180µJ (off)	Standard	120 nC	22ns/180ns	400V, 25A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
SIGC42T60NCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 43ns/130ns Test Condition: 300V, 50A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	43ns/130ns	300V, 50A, 3.3Ohm, 15V	-	-55°C ~ 150°C	Surface Mount	Die	Die
AIMDQ75R040M1HXUMA1	Infineon Technologies	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,250	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK30B135D2	Alpha & Omega Semiconductor Inc.	IGBT 1350V 30A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247
IRGSL15B60KDPBF-INF	Infineon Technologies	IGBT W/ULTRAFAST SOFT RECOVERY D IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 62 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208 W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 56 nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262	패키지: -	Request a Quote	600 V	31 A	62 A	2.2V @ 15V, 15A	208 W	220µJ (on), 340µJ (off)	Standard	56 nC	34ns/184ns	400V, 15A, 22Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262