페이지 69 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  69/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGPS47160DPBF
Infineon Technologies

IGBT 600V TO247 COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,688
650V
160A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247
IRGR4610DTRRPBF
Infineon Technologies

IGBT 600V 16A 77W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,440
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG7PH28UD1PBF
Infineon Technologies

IGBT 1200V 30A 115W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 115W
  • Switching Energy: 543µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: -/229ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,576
1200V
30A
100A
2.3V @ 15V, 15A
115W
543µJ (off)
Standard
90nC
-/229ns
600V, 15A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH42UD1PBF
Infineon Technologies

IGBT 1200V 85A 313W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 313W
  • Switching Energy: 1.21mJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: -/270ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,072
1200V
85A
200A
2V @ 15V, 30A
313W
1.21mJ (off)
Standard
180nC
-/270ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IHW30N100R
Infineon Technologies

IGBT 1000V 60A 412W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 412W
  • Switching Energy: 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 209nC
  • Td (on/off) @ 25°C: -/846ns
  • Test Condition: 600V, 30A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고427,440
1000V
60A
90A
1.7V @ 15V, 30A
412W
2.1mJ (off)
Standard
209nC
-/846ns
600V, 30A, 26 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
RJH1CF7RDPQ-80#T2
Renesas Electronics America

IGBT 1200V 60A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,136
1200V
60A
-
2.4V @ 15V, 35A
250W
-
Standard
-
-
-
-
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGB8206NTF4
ON Semiconductor

IGBT 390V 20A 150W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,848
390V
20A
50A
1.9V @ 4.5V, 20A
150W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGP20N6S2D
Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 25µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 7.7ns/87ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고4,688
600V
28A
40A
2.7V @ 15V, 7A
125W
25µJ (on), 58µJ (off)
Standard
30nC
7.7ns/87ns
390V, 7A, 25 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGP6690DPBF
Infineon Technologies

IGBT 600V 140A 483W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
  • Power - Max: 483W
  • Switching Energy: 3.1mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 85ns/222ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,928
600V
140A
225A
1.95V @ 15V, 75A
483W
3.1mJ (on), 2.8mJ (off)
Standard
140nC
85ns/222ns
400V, 75A, 10 Ohm, 15V
90ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKZ50N65ES5XKSA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,176
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGR3B60KD2PBF
Infineon Technologies

IGBT 600V 7.8A 52W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.8A
  • Current - Collector Pulsed (Icm): 15.6A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 52W
  • Switching Energy: 62µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 3A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,488
600V
7.8A
15.6A
2.4V @ 15V, 3A
52W
62µJ (on), 39µJ (off)
Standard
13nC
18ns/110ns
400V, 3A, 100 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
AIHD06N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 90µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 8ns/105ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,232
600V
12A
18A
2.5V @ 15V, 6A
100W
90µJ (on), 90µJ (off)
Standard
48nC
8ns/105ns
400V, 6A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXYH8N250CV1HV
IXYS

IGBT 2500V 29A TO247HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): 70A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
  • Power - Max: 280W
  • Switching Energy: 2.6mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 11ns/180ns
  • Test Condition: 1250V, 8A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 5ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고2,864
2500V
29A
70A
4V @ 15V, 8A
280W
2.6mJ (on), 1.07mJ (off)
Standard
45nC
11ns/180ns
1250V, 8A, 15 Ohm, 15V
5ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXXH100N60C3
IXYS

IGBT 600V 190A 830W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 190A
  • Current - Collector Pulsed (Icm): 380A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
  • Power - Max: 830W
  • Switching Energy: 2mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 360V, 70A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고5,456
600V
190A
380A
2.2V @ 15V, 70A
830W
2mJ (on), 950µJ (off)
Standard
150nC
30ns/90ns
360V, 70A, 2 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
hot NGTB20N60L2TF1G
ON Semiconductor

IGBT 600V 20A TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
  • Power - Max: 64W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 60ns/193ns
  • Test Condition: 300V, 20A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PF-3
패키지: TO-3PFM, SC-93-3
재고73,176
600V
40A
80A
1.65V @ 15V, 20A
64W
-
Standard
84nC
60ns/193ns
300V, 20A, 30 Ohm, 15V
70ns
175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PF-3
SGP23N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 23A 100W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고3,008
600V
23A
92A
2.6V @ 15V, 12A
100W
115µJ (on), 135µJ (off)
Standard
49nC
17ns/60ns
300V, 12A, 23 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXGH48N60C3
IXYS

IGBT 600V 75A 300W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고4,768
600V
75A
250A
2.5V @ 15V, 30A
300W
410µJ (on), 230µJ (off)
Standard
77nC
19ns/60ns
400V, 30A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGB30H60DF
STMicroelectronics

IGBT 600V 60A 260W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 350µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,568
600V
60A
120A
2.4V @ 15V, 30A
260W
350µJ (on), 400µJ (off)
Standard
105nC
50ns/160ns
400V, 30A, 10 Ohm, 15V
110ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGB8NC60KT4
STMicroelectronics

IGBT 600V 15A 65W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
  • Power - Max: 65W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,754
600V
15A
30A
2.75V @ 15V, 3A
65W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 3A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGZ100N65H5XKSA1
Infineon Technologies

IGBT 650V 100A SGL TO-247-4

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 161A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: 536W
  • Switching Energy: 850µJ (on), 770µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 30ns/421ns
  • Test Condition: 400V, 50A, 8 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4
패키지: TO-247-4
재고5,600
650V
161A
400A
2.1V @ 15V, 100A
536W
850µJ (on), 770µJ (off)
Standard
210nC
30ns/421ns
400V, 50A, 8 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
FGH4L75T65MQDC50
onsemi

IGBT FIELD STOP 650V 110A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 110 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
  • Power - Max: 385 W
  • Switching Energy: 720µJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 146 nC
  • Td (on/off) @ 25°C: 29ns/187ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: -
Request a Quote
650 V
110 A
300 A
1.8V @ 15V, 75A
385 W
720µJ (on), 960µJ (off)
Standard
146 nC
29ns/187ns
400V, 75A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
SIGC121T60NR2CX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 125ns/225ns
  • Test Condition: 300V, 150A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
150 A
450 A
2.5V @ 15V, 150A
-
-
Standard
-
125ns/225ns
300V, 150A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
APT20GF120BRDG
Microchip Technology

IGBT NPT COMBI 1200V 20A TO-247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): 64 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 17ns/93ns
  • Test Condition: 792V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고54
1200 V
32 A
64 A
3.2V @ 15V, 15A
200 W
-
Standard
140 nC
17ns/93ns
792V, 20A, 10Ohm, 15V
85 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGB3245G2-F085C
onsemi

IGNITION IGBT, 450V, 23A, 1.3V,

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 23 nC
  • Td (on/off) @ 25°C: 900ns/5.4µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): 2.6 µs
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
패키지: -
Request a Quote
450 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
23 nC
900ns/5.4µs
300V, 6.5A, 1kOhm, 5V
2.6 µs
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
IGP20N65H5XKSA1
Infineon Technologies

IGBT 650V 42A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 42 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125 W
  • Switching Energy: 170µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 18ns/156ns
  • Test Condition: 400V, 10A, 32Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
패키지: -
재고1,308
650 V
42 A
60 A
2.1V @ 15V, 20A
125 W
170µJ (on), 60µJ (off)
Standard
48 nC
18ns/156ns
400V, 10A, 32Ohm, 15V
-
-
Through Hole
TO-220-3
PG-TO220-3-1
FGHL40S65UQ
onsemi

IGBT 650V 40A

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 231 W
  • Switching Energy: 1.76mJ (on), 362µJ (off)
  • Input Type: Standard
  • Gate Charge: 306 nC
  • Td (on/off) @ 25°C: 32ns/260ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 319 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
650 V
80 A
120 A
1.7V @ 15V, 40A
231 W
1.76mJ (on), 362µJ (off)
Standard
306 nC
32ns/260ns
400V, 40A, 6Ohm, 15V
319 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGS80TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 73A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 73 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 272 W
  • Switching Energy: 1.05mJ (on), 1.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 37ns/112ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고489
650 V
73 A
120 A
2.1V @ 15V, 40A
272 W
1.05mJ (on), 1.03mJ (off)
Standard
48 nC
37ns/112ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
AIGB50N65F5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
Request a Quote
650 V
50 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2