트랜지스터 - IGBT - 단일

SGW10N60AFKSA1

Infineon Technologies

IGBT 600V 20A 92W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
• Power - Max: 92W
• Switching Energy: 320µJ
• Input Type: Standard
• Gate Charge: 52nC
• Td (on/off) @ 25°C: 28ns/178ns
• Test Condition: 400V, 10A, 25 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

FGD4536TM_SN00306

Fairchild/ON Semiconductor

IGBT 360V 125W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IXGP50N60C4

IXYS

IGBT 600V 90A 300W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 220A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
• Power - Max: 300W
• Switching Energy: 950µJ (on), 840µJ (off)
• Input Type: Standard
• Gate Charge: 113nC
• Td (on/off) @ 25°C: 40ns/270ns
• Test Condition: 400V, 36A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IXST15N120B

IXYS

IGBT 1200V 30A 150W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
• Power - Max: 150W
• Switching Energy: 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: 30ns/148ns
• Test Condition: 960V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGH10N100U1

IXYS

IGBT 1000V 20A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 52nC
• Td (on/off) @ 25°C: 100ns/550ns
• Test Condition: 800V, 10A, 150 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

AUIRGP4063D-E

Infineon Technologies

IGBT 600V 96A 330W TO-247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

IRG8CH76K10F

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 480nC
• Td (on/off) @ 25°C: 80ns/210ns
• Test Condition: 600V, 75A, 1.5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: Die

AIKW75N60CTXKSA1

Infineon Technologies

IC DISCRETE 600V TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 428W
• Switching Energy: 2mJ (on), 2.5mJ (off)
• Input Type: Standard
• Gate Charge: 470nC
• Td (on/off) @ 25°C: 33ns/330ns
• Test Condition: 400V, 75A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

IXGR32N170AH1

IXYS

IGBT 1700V 26A 200W ISOPLUS247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 26A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 21A
• Power - Max: 200W
• Switching Energy: 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 46ns/260ns
• Test Condition: 1360V, 21A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 230ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

IXDA20N120AS

IXYS

IGBT 1200V 38A 200W TO263AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 38A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 200W
• Switching Energy: 3.1mJ (on), 2.4mJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 20A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HGTP20N60A4

Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 280A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
• Power - Max: 290W
• Switching Energy: 105µJ (on), 150µJ (off)
• Input Type: Standard
• Gate Charge: 142nC
• Td (on/off) @ 25°C: 15ns/73ns
• Test Condition: 390V, 20A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IRGP4660D-EPBF

Infineon Technologies

IGBT 600V 100A 330W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

RJH60D7BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 90A 300W TO-247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
• Power - Max: 300W
• Switching Energy: 700µJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 125nC
• Td (on/off) @ 25°C: 60ns/180ns
• Test Condition: 300V, 50A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

STGB20N40LZ

STMicroelectronics

IGBT 390V 25A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 700ns/4.3µs
• Test Condition: 300V, 10A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGW50N65F5FKSA1

Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 305W
• Switching Energy: 490µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 21ns/175ns
• Test Condition: 400V, 25A, 12 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

STGP15M65DF2

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
• Power - Max: 136W
• Switching Energy: 90µJ (on), 450µJ (off)
• Input Type: Standard
• Gate Charge: 45nC
• Td (on/off) @ 25°C: 24ns/93ns
• Test Condition: 400V, 15A, 12 Ohm, 15V
• Reverse Recovery Time (trr): 142ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

패키지: TO-220-3

FGH60N60SMD_F085

Fairchild/ON Semiconductor

IGBT 600V 120A 600W TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
• Power - Max: 600W
• Switching Energy: 1.59mJ (on), 390µJ (off)
• Input Type: Standard
• Gate Charge: 280nC
• Td (on/off) @ 25°C: 22ns/116ns
• Test Condition: 400V, 60A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

FGH40T65SHDF_F155

Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247-3

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
• Power - Max: 268W
• Switching Energy: 1.22mJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 18ns/64ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 101ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

FGH75T65SQD_F155

Fairchild/ON Semiconductor

IGBT 650V 150A 375W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: 375W
• Switching Energy: 760µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 128nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 43ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

IXA70R1200NA

IXYS

DISC IGBT XPT-GENX3 SOT-227B(MIN

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 350 W
• Switching Energy: 4.5mJ (on), 5.5mJ (off)
• Input Type: Standard
• Gate Charge: 190 nC
• Td (on/off) @ 25°C: 70ns/250ns
• Test Condition: 600V, 50A, 15Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: -

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RGW80TK65EGVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 39 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
• Power - Max: 81 W
• Switching Energy: 760µJ (on), 720µJ (off)
• Input Type: Standard
• Gate Charge: 110 nC
• Td (on/off) @ 25°C: 44ns/143ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 102 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

패키지: -

IKFW50N65DH5XKSA1

Infineon Technologies

HOME APPLIANCES 14 PG-HSIP247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 59 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
• Power - Max: 124 W
• Switching Energy: 1.46mJ (on), 630µJ (off)
• Input Type: Standard
• Gate Charge: 95 nC
• Td (on/off) @ 25°C: 23ns/131ns
• Test Condition: 400V, 50A, 12.2Ohm, 15V
• Reverse Recovery Time (trr): 68 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-HSIP247-3-2

패키지: -

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DGG4015

Sanken Electric USA Inc.

IGBT WITH GATE PROTECTION DIODE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 425 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 10V, 10A
• Power - Max: 55 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

패키지: -

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HGTP3N60B3R4724

Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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FGR15N40A

Fairchild Semiconductor

IGBT, 8A, 400V, N-CHANNEL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 8 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 6V @ 4V, 150A
• Power - Max: 1.25 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 41 nC
• Td (on/off) @ 25°C: 180ns/460ns
• Test Condition: 300V, 150A, 51Ohm, 4V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSOP (0.130", 3.30mm Width)
• Supplier Device Package: -

패키지: -

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HGT1S7N60C3D

Fairchild Semiconductor

IGBT, 14A, 600V, N-CHANNEL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 14 A
• Current - Collector Pulsed (Icm): 56 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
• Power - Max: 60 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 38 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 25 ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262 (I2PAK)

패키지: -

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FGD3245G2-F085C

onsemi

ECOSPARK2 IGN-IGBT TO252

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 450 V
• Current - Collector (Ic) (Max): 23 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 23 nC
• Td (on/off) @ 25°C: 0.9µs/5.4µs
• Test Condition: 300V, 6.5A, 1000Ohm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

패키지: -

RGCL80TS60GC13

Rohm Semiconductor

IGBT TRENCH FS 600V 65A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 65 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 148 W
• Switching Energy: 1.11mJ (on), 1.68mJ (off)
• Input Type: Standard
• Gate Charge: 98 nC
• Td (on/off) @ 25°C: 53ns/227ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

패키지: -