페이지 30 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MX2N4859	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 25 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: TO-206AA, TO-18-3 Metal Can	재고4,736	30V	30V	175mA @ 15V	-	10V @ 500pA	18pF @ 10V	25 Ohm	360mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
U440-E3	Vishay Siliconix	JFET DUAL P-CH 25V TO-71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: -	패키지: TO-71-6	재고3,568	25V	-	6mA @ 10V	-	1V @ 1nA	3pF @ 10V	-	500mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6	-
2N5115JTXL02	Vishay Siliconix	JFET P-CH 30V TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고3,168	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4119A-2	Vishay Siliconix	MOSFET N-CH 40V 200UA TO-206AF FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-206AF (TO-72)	패키지: TO-206AF, TO-72-4 Metal Can	재고2,400	40V	-	200µA @ 10V	-	2V @ 1nA	3pF @ 10V	-	300mW	-55°C ~ 175°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-206AF (TO-72)
PN4391_D75Z	Fairchild/ON Semiconductor	JFET N-CH 30V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 30 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,480	30V	-	50mA @ 20V	-	4V @ 1nA	14pF @ 20V	30 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSK30OBU	Fairchild/ON Semiconductor	JFET N-CH 50V 0.1W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,064	50V	-	600µA @ 10V	-	400mV @ 100nA	8.2pF @ 0V	-	100mW	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SK06620RL	Panasonic Electronic Components	JFET N-CH 20MA 150MW SMINI-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 10V Current Drain (Id) - Max: 20mA Voltage - Cutoff (VGS off) @ Id: 100mV @ 10µA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 10V Resistance - RDS(On): - Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고5,936	-	30V	500µA @ 10V	20mA	100mV @ 10µA	14pF @ 10V	-	150mW	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
2SK23800QL	Panasonic Electronic Components	JFET N-CH 1MA 125MW SSMINI-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 1.3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 1pF @ 10V Resistance - RDS(On): - Power - Max: 125mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F2	패키지: SC-89, SOT-490	재고4,448	-	40V	50µA @ 10V	1mA	1.3V @ 1µA	1pF @ 10V	-	125mW	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F2
PN4393 TRA	Central Semiconductor Corp	JFET N-CH 40V 0.625W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohm Power - Max: 625mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,360	40V	-	5mA @ 20V	-	500mV @ 1nA	14pF @ 20V	100 Ohm	625mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
BFR31,215	NXP	JFET N-CH 10MA 250MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V Current Drain (Id) - Max: 10mA Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): - Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,528	-	25V	1mA @ 10V	10mA	2.5V @ 0.5nA	4pF @ 10V	-	250mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
2SK932-22-TB-E	ON Semiconductor	JFET N-CH 50MA 200MW CP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 15V Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 200mV @ 100µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: TO-236-3, SC-59, SOT-23-3	재고581,892	-	15V	7.3mA @ 5V	50mA	200mV @ 100µA	-	-	200mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
MCH3914-7-TL-H	ON Semiconductor	JFET N-CH 50MA 300MW MCPH3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 15V Current - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 10µA Input Capacitance (Ciss) (Max) @ Vds: 4.9pF @ 5V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: SC-70FL/MCPH3	패키지: 3-SMD, Flat Leads	재고29,976	-	15V	16mA @ 5V	50mA	600mV @ 10µA	4.9pF @ 5V	-	300mW	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	SC-70FL/MCPH3
PMBFJ109,215	NXP	JFET N-CH 25V 250MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS) Resistance - RDS(On): 12 Ohm Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고115,212	25V	25V	40mA @ 15V	-	6V @ 1µA	30pF @ 10V (VGS)	12 Ohm	250mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
MMBF5457	Fairchild/ON Semiconductor	JFET N-CH 25V 350MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고721,752	25V	-	1mA @ 15V	-	500mV @ 10nA	7pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MMBF4393	Fairchild/ON Semiconductor	JFET N-CH 30V 350MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고203,292	30V	30V	5mA @ 20V	-	500mV @ 1nA	14pF @ 20V	100 Ohm	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
SMP4341TR	InterFET	JFET N-Channel -50V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 4.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 100 nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V Resistance - RDS(On): 450 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	50 V	4.5 mA @ 15 V	-	3.5 V @ 100 nA	3pF @ 15V	450 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
NTE2910	NTE Electronics, Inc	JFET N-CH 40V TO18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohms Power - Max: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	Request a Quote	40 V	40 V	5 mA @ 20 V	-	500 mV @ 1 nA	14pF @ 20V	100 Ohms	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
MQ2N4093	Microchip Technology	JFET N-CH 40V TO18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 80 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	40 V	40 V	8 mA @ 20 V	-	-	16pF @ 20V	80 Ohms	360 mW	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MQ2N5116UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	5 mA @ 15 V	-	1 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
U309-TO-18-3L	Linear Integrated Systems, Inc.	JFET N-CH 25V TO18-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): 35 Ohms Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18-3	패키지: -	재고1,362	25 V	-	12 mA @ 10 V	-	1 V @ 1 nA	4pF @ 10V	35 Ohms	500 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18-3
MQ2N4091UB-TR	Microchip Technology	JFET N-CH 40V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	40 V	40 V	30 mA @ 20 V	-	-	16pF @ 20V	30 Ohms	360 mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	UB
NTE451	NTE Electronics, Inc	JFET N-CH 25V 30MA TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V Current Drain (Id) - Max: 30 mA Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Resistance - RDS(On): - Power - Max: 350 mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	25 V	-	4 mA @ 15 V	30 mA	500 mV @ 10 nA	5pF @ 15V	-	350 mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
CP216-2N4392-CM	Central Semiconductor Corp	JFET N-CH 40V 50MA DIE FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Current Drain (Id) - Max: 50 mA Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V Resistance - RDS(On): 60 Ohms Power - Max: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	40 V	40 V	25 mA @ 20 V	50 mA	2 V @ 1 nA	20pF @ 20V	60 Ohms	-	-65°C ~ 175°C (TJ)	Surface Mount	Die	Die
2N4391-TO-18-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 40V TO18-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 30 Ohms Power - Max: 1.8 W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18-3	패키지: -	재고765	40 V	-	50 mA @ 20 V	-	4 V @ 1 nA	14pF @ 20V	30 Ohms	1.8 W	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18-3
2SK514-T-A	Renesas Electronics Corporation	JFET N-CH FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
U422-TO-78-7L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 40V TO78-7 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-7 Metal Can Supplier Device Package: TO-78-7	패키지: -	재고1,500	40 V	-	-	-	-	3pF @ 10V	-	500 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-78-7 Metal Can	TO-78-7
2SK242-4-TB-E	onsemi	NCH J-FET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SST404-SOIC-8L-TR	Linear Integrated Systems, Inc.	JFET 2N-CH 50V 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 50 V Drain to Source Voltage (Vdss): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고3,324	50 V	50 V	500 µA @ 10 V	-	500 mV @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

MX2N4859

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: TO-206AA, TO-18-3 Metal Can

재고4,736

30V

175mA @ 15V

-

10V @ 500pA

18pF @ 10V

25 Ohm

360mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

U440-E3

Vishay Siliconix

JFET DUAL P-CH 25V TO-71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6
Supplier Device Package: -

패키지: TO-71-6

재고3,568

25V

-

6mA @ 10V

-

1V @ 1nA

3pF @ 10V

-

500mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6

-

2N5115JTXL02

Vishay Siliconix

JFET P-CH 30V TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고3,168

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4119A-2

Vishay Siliconix

MOSFET N-CH 40V 200UA TO-206AF

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-206AF (TO-72)

패키지: TO-206AF, TO-72-4 Metal Can

재고2,400

40V

-

200µA @ 10V

-

2V @ 1nA

3pF @ 10V

-

300mW

-55°C ~ 175°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-206AF (TO-72)

PN4391_D75Z

Fairchild/ON Semiconductor

JFET N-CH 30V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,480

30V

-

50mA @ 20V

-

4V @ 1nA

14pF @ 20V

30 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSK30OBU

Fairchild/ON Semiconductor

JFET N-CH 50V 0.1W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,064

50V

-

600µA @ 10V

-

400mV @ 100nA

8.2pF @ 0V

-

100mW

125°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SK06620RL

Panasonic Electronic Components

JFET N-CH 20MA 150MW SMINI-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 10V
Current Drain (Id) - Max: 20mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 10µA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 10V
Resistance - RDS(On): -
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고5,936

-

30V

500µA @ 10V

20mA

100mV @ 10µA

14pF @ 10V

-

150mW

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

2SK23800QL

Panasonic Electronic Components

JFET N-CH 1MA 125MW SSMINI-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 1.3V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 1pF @ 10V
Resistance - RDS(On): -
Power - Max: 125mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F2

패키지: SC-89, SOT-490

재고4,448

-

40V

50µA @ 10V

1mA

1.3V @ 1µA

1pF @ 10V

-

125mW

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F2

PN4393 TRA

Central Semiconductor Corp

JFET N-CH 40V 0.625W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohm
Power - Max: 625mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,360

40V

-

5mA @ 20V

-

500mV @ 1nA

14pF @ 20V

100 Ohm

625mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

BFR31,215

NXP

JFET N-CH 10MA 250MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): -
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,528

-

25V

1mA @ 10V

10mA

2.5V @ 0.5nA

4pF @ 10V

-

250mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

2SK932-22-TB-E

ON Semiconductor

JFET N-CH 50MA 200MW CP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 15V
Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 200mV @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: TO-236-3, SC-59, SOT-23-3

재고581,892

-

15V

7.3mA @ 5V

50mA

200mV @ 100µA

-

200mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

MCH3914-7-TL-H

ON Semiconductor

JFET N-CH 50MA 300MW MCPH3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 15V
Current - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 10µA
Input Capacitance (Ciss) (Max) @ Vds: 4.9pF @ 5V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: SC-70FL/MCPH3

패키지: 3-SMD, Flat Leads

재고29,976

-

15V

16mA @ 5V

50mA

600mV @ 10µA

4.9pF @ 5V

-

300mW

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

SC-70FL/MCPH3

PMBFJ109,215

NXP

JFET N-CH 25V 250MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
Resistance - RDS(On): 12 Ohm
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고115,212

25V

40mA @ 15V

-

6V @ 1µA

30pF @ 10V (VGS)

12 Ohm

250mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

MMBF5457

Fairchild/ON Semiconductor

JFET N-CH 25V 350MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고721,752

25V

-

1mA @ 15V

-

500mV @ 10nA

7pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MMBF4393

Fairchild/ON Semiconductor

JFET N-CH 30V 350MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고203,292

30V

5mA @ 20V

-

500mV @ 1nA

14pF @ 20V

100 Ohm

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

SMP4341TR

InterFET

JFET N-Channel -50V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): 4.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
Resistance - RDS(On): 450 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

50 V

4.5 mA @ 15 V

-

3.5 V @ 100 nA

3pF @ 15V

450 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

NTE2910

NTE Electronics, Inc

JFET N-CH 40V TO18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohms
Power - Max: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

Request a Quote

40 V

5 mA @ 20 V

-

500 mV @ 1 nA

14pF @ 20V

100 Ohms

-

-55°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

MQ2N4093

Microchip Technology

JFET N-CH 40V TO18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 80 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

40 V

8 mA @ 20 V

-

16pF @ 20V

80 Ohms

360 mW

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MQ2N5116UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

5 mA @ 15 V

-

1 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

U309-TO-18-3L

Linear Integrated Systems, Inc.

JFET N-CH 25V TO18-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): 35 Ohms
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18-3

패키지: -

재고1,362

25 V

-

12 mA @ 10 V

-

1 V @ 1 nA

4pF @ 10V

35 Ohms

500 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18-3

MQ2N4091UB-TR

Microchip Technology

JFET N-CH 40V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

40 V

30 mA @ 20 V

-

16pF @ 20V

30 Ohms

360 mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

UB

NTE451

NTE Electronics, Inc

JFET N-CH 25V 30MA TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Current Drain (Id) - Max: 30 mA
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350 mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

25 V

-

4 mA @ 15 V

30 mA

500 mV @ 10 nA

5pF @ 15V

-

350 mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

CP216-2N4392-CM

Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Current Drain (Id) - Max: 50 mA
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
Resistance - RDS(On): 60 Ohms
Power - Max: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

40 V

25 mA @ 20 V

50 mA

2 V @ 1 nA

20pF @ 20V

60 Ohms

-

-65°C ~ 175°C (TJ)

Surface Mount

Die

2N4391-TO-18-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 40V TO18-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18-3

패키지: -

재고765

40 V

-

50 mA @ 20 V

-

4 V @ 1 nA

14pF @ 20V

30 Ohms

1.8 W

-55°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18-3

2SK514-T-A

Renesas Electronics Corporation

JFET N-CH

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

U422-TO-78-7L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 40V TO78-7

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-7 Metal Can
Supplier Device Package: TO-78-7

패키지: -

재고1,500

40 V

-

3pF @ 10V

-

500 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-78-7 Metal Can

TO-78-7

2SK242-4-TB-E

onsemi

NCH J-FET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SST404-SOIC-8L-TR

Linear Integrated Systems, Inc.

JFET 2N-CH 50V 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 50 V
Drain to Source Voltage (Vdss): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고3,324

50 V

500 µA @ 10 V

-

500 mV @ 1 nA

8pF @ 15V

-

300 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC