페이지 102 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-836
Language Translation

* Please refer to the English Version as our Official Version.

다이오드 - 브리지 정류기

기록 7,565
페이지  102/271
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3N257-5410E4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 600V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고4,144
Standard
600V
2A
1.1V @ 3.14A
5µA @ 600V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot GBPC3510W
Diodes Incorporated

RECT BRIDGE GPP 35A 1000V GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고33,396
Standard
1000V
35A
1.1V @ 17.5A
5µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
MB108-BP
Micro Commercial Co

RECTIFIER BRIDGE 10A 800V BR-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-6
  • Supplier Device Package: BR-6
패키지: 4-Square, BR-6
재고7,104
Standard
800V
10A
1.1V @ 5A
10µA @ 800V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, BR-6
BR-6
VUO120-16NO2T
IXYS

DIODE BRIDGE 1600V 180A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 180A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 60A
  • Current - Reverse Leakage @ Vr: 100µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
패키지: V2-PAK
재고3,888
Standard
1600V
180A
1.16V @ 60A
100µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
V2-PAK
V2-PAK
GBPC2501 T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고6,480
Standard
100V
25A
1.1V @ 12.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
VS-KBPC1005
Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 50V 3.0 D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
패키지: 4-Square, D-72
재고6,560
Standard
1000V
3A
1.1V @ 1.5A
10µA @ 50V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
TS15P01GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고2,704
Standard
50V
15A
1.1V @ 15A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU406HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,144
Standard
800V
4A
1.1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
TS4K60HD3G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: TS4K
패키지: 4-SIP, GBL
재고2,192
Standard
600V
4A
1.1V @ 4A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
TS4K
G2SBA60-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고2,816
Standard
600V
1.5A
1V @ 750mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBJ6005TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 6A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
패키지: 4-ESIP
재고3,104
Standard
50V
6A
1.1V @ 6A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
KBP08M-M4/51
Vishay Semiconductor Diodes Division

RECT BRIDGE 1.5A 800V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고4,640
Standard
800V
1.5A
1.1V @ 3.14A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
GBPC2506
Fairchild/ON Semiconductor

RECT BRIDGE GPP 25A 600V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고19,848
Standard
600V
25A
1.1V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
hot DF04S-T
Diodes Incorporated

RECT BRIDGE GPP 1A 400V DFS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DF-S
패키지: 4-SMD, Gull Wing
재고143,184
Standard
400V
1A
1.1V @ 1A
10µA @ 400V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
TS50P07G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 50A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
Request a Quote
Standard
1 kV
50 A
1.1 V @ 1.5 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
DF50AA160
SanRex Corporation

DIOE MODULE 1600V 50A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
  • Current - Reverse Leakage @ Vr: 8 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
1.6 kV
50 A
1.2 V @ 50 A
8 mA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
GBL2J
Surge

2A -600V - GBL - BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL(2S)
패키지: -
Request a Quote
Standard
600 V
2 A
1 V @ 1 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL(2S)
MB258-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MB-35
  • Supplier Device Package: MB-35
패키지: -
Request a Quote
Standard
800 V
25 A
1.1 V @ 12.5 A
10 µA @ 800 V
-55°C ~ 150°C
QC Terminal
4-Square, MB-35
MB-35
ABF210
SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 2A ABF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABF
패키지: -
Request a Quote
Standard
1 kV
2 A
1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABF
GBU808-01-LS
Diodes Incorporated

Medium/High Power Bridge GBU TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
800 V
8 A
1.2 V @ 8 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
683-1
Microchip Technology

SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, NB
  • Supplier Device Package: NB
패키지: -
Request a Quote
Standard
100 V
20 A
1.2 V @ 5 A
10 µA @ 100 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, NB
NB
695-5
Microchip Technology

BRIDGES

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 500 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 500 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: NC
  • Supplier Device Package: NC
패키지: -
Request a Quote
Standard
500 V
15 A
1.2 V @ 2 A
5 µA @ 500 V
-65°C ~ 150°C (TJ)
Chassis Mount
NC
NC
ABS15M
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 1.5A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: -
재고14,637
Standard
1 kV
1.5 A
1 V @ 1.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
B250C1500B
Diotec Semiconductor

BRIDGE 1-PH GBS_SIL-1.5-2.3 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: 4-SIP
패키지: -
Request a Quote
Standard
600 V
1.8 A
1.1 V @ 2 A
5 µA @ 600 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP
4-SIP
TS10K80
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 10A TS4K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: TS4K
패키지: -
재고5,601
Standard
800 V
10 A
1 V @ 2 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
TS4K
GBLA06L-6985M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
MB16S
Good-Ark Semiconductor

BRIDGE RECTIFIER, SCHOTTKY, 1.0A

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 60 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
패키지: -
재고58,350
Schottky
60 V
1 A
700 mV @ 1 A
500 µA @ 60 V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
BR5002
EIC SEMICONDUCTOR INC.

STD 50A, CASE TYPE: BR50

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, BR-50
  • Supplier Device Package: BR-50
패키지: -
Request a Quote
Standard
200 V
50 A
1.1 V @ 25 A
10 µA @ 200 V
-40°C ~ 150°C (TJ)
Chassis Mount
4-Square, BR-50
BR-50