페이지 116 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
KBPM208G
GeneSiC Semiconductor

DIODE BRIDGE 800V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고7,232
Standard
800V
2A
1.1V @ 2A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
3KBP04M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 3A 400V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,024
Standard
400V
3A
1.05V @ 3A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
BR1004W-G
Comchip Technology

BRIDGE DIODE 10A 400V BR-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-W
  • Supplier Device Package: BR-W
패키지: 4-Square, BR-W
재고3,808
Standard
400V
10A
1.1V @ 25A
10µA @ 400V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, BR-W
BR-W
MB1505W-BP
Micro Commercial Co

RECT BRIDGE 15A 50V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
패키지: 4-Square, MB-35W
재고7,936
Standard
50V
15A
1.2V @ 7.5A
10µA @ 50V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
GBU404GTB
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
패키지: 4-ESIP
재고2,016
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
SBS34HREG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SCHOTTKY BRIDG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: 4-SMD, Gull Wing
재고7,632
Standard
40V
3A
500mV @ 3A
500µA @ 40V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
DF1510S-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 1000V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
패키지: 4-SMD, Gull Wing
재고7,648
Standard
1000V
1.5A
1.1V @ 1.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
DF1502ST-G
Comchip Technology

RECTIFIER BRIDGE 1.5A 200V DF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
패키지: 4-SMD, Gull Wing
재고4,240
Standard
200V
1.5A
1.1V @ 1.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
EABS1J RGG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: 4-SMD, Gull Wing
재고3,056
Standard
600V
1A
1.7V @ 1A
1µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
VS-KBPC601PBF
Vishay Semiconductor Diodes Division

MOD BRIDGE 1PH 6A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
패키지: 4-Square, D-72
재고5,680
Standard
100V
6A
-
10µA @ 100V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
hot VUO50-12NO3
IXYS

RECT BRIDGE 3PH 58A 1200V FO-F-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 58A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-F-B
  • Supplier Device Package: FO-F-B
패키지: FO-F-B
재고6,672
Standard
1200V
58A
1.9V @ 150A
300µA @ 1200V
-40°C ~ 125°C (TJ)
Chassis Mount
FO-F-B
FO-F-B
hot GBU8K
Fairchild/ON Semiconductor

RECT BRIDGE GPP 8A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고263,568
Standard
800V
8A
1V @ 8A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
CBRLDSH2-40 TR13
Central Semiconductor Corp

RECT BRIDGE 2A 40V 4LPDIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-LPDIP
패키지: 4-SMD, Gull Wing
재고7,472
Schottky
40V
2A
500mV @ 2A
100µA @ 40V
-55°C ~ 125°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-LPDIP
DB105-BP
Micro Commercial Co

RECTIFIER BRIDGE 1A 600V DB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-1
패키지: 4-EDIP (0.321", 8.15mm)
재고53,220
Standard
600V
1A
1.1V @ 1A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-1
DF005S-T
Diodes Incorporated

RECT BRIDGE GPP 1A 50V DFS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DF-S
패키지: 4-SMD, Gull Wing
재고86,400
Standard
50V
1A
1.1V @ 1A
10µA @ 50V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
NTE5740
NTE Electronics, Inc

3 PHASE BRIDGE MODULE

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Current - Reverse Leakage @ Vr: 2 mA @ 800 V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
800 V
30 A
1.1 V @ 30 A
2 mA @ 800 V
-
Chassis Mount
Module
-
DB106SP-HF
Comchip Technology

BRIDGE RECT 1PHASE 800V 1A DBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBS
패키지: -
Request a Quote
Standard
800 V
1 A
1.1 V @ 1 A
10 µA @ 800 V
-55°C ~ 150°C
Surface Mount
4-SMD, Gull Wing
DBS
GBL06L-6870E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBI35K
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
패키지: -
Request a Quote
Standard
800 V
5 A
1.1 V @ 17.5 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
GBI20K
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
패키지: -
Request a Quote
Standard
800 V
3.6 A
1.1 V @ 10 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
GBJ30K
GeneSiC Semiconductor

800V 30A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
800 V
30 A
1.05 V @ 15 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
DBL158G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 1.2KV 1.5A DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: -
재고15,000
Standard
1.2 kV
1.5 A
1.25 V @ 1.5 A
2 µA @ 1200 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
MBL2S-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MBLS-1
패키지: -
Request a Quote
Standard
200 V
500 mA
1 V @ 400 mA
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MBLS-1
G2SB20-BP
Micro Commercial Co

DIODE GPP 2A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
200 V
2 A
1.1 V @ 1 A
5 µA @ 200 V
-55°C ~ 150°C
Through Hole
4-SIP, GBL
GBL
DB15-16
Diotec Semiconductor

IC

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, DB-35
  • Supplier Device Package: DB
패키지: -
Request a Quote
Standard
1.6 kV
15 A
1.05 V @ 12.5 A
10 µA @ 1600 V
-50°C ~ 150°C (TJ)
Chassis Mount
5-Square, DB-35
DB
682-3
Microchip Technology

BRIDGE RECTIFIER

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 300 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: NC
  • Supplier Device Package: NC
패키지: -
Request a Quote
Standard
300 V
20 A
1.2 V @ 6 A
10 µA @ 300 V
-65°C ~ 150°C (TJ)
Chassis Mount
NC
NC
GBU8K-5410E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
800 V
3.9 A
1 V @ 8 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBPC3506
Solid State Inc.

35 AMP BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC
  • Supplier Device Package: KBPC
패키지: -
Request a Quote
Standard
600 V
35 A
1.2 V @ 17.5 A
10 µA @ 600 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC
KBPC