페이지 172 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  172/271
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설명
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재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MB8M-BP
Micro Commercial Co

DIODE BRIDGE GPP 0.5A MB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.200", 5.08mm)
  • Supplier Device Package: MB-1
패키지: 4-DIP (0.200", 5.08mm)
재고4,224
Standard
800V
500mA
1V @ 400mA
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.200", 5.08mm)
MB-1
G3SBA60-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고2,240
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
VBO52-14NO7
IXYS

DIODE BRIDGE 52A 1400V PWS-D

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 52A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
패키지: PWS-D
재고3,600
Standard
1400V
52A
1.8V @ 150A
300µA @ 1400V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-D
PWS-D
GBPC1204W-E4/51
Vishay Semiconductor Diodes Division

DIODE 1PH 12A 400V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고3,280
Standard
400V
12A
1.1V @ 6A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
BU2010-M3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 20A 1000V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고2,752
Standard
1000V
20A
1.05V @ 10A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
hot GBU6D
GeneSiC Semiconductor

DIODE BRIDGE 200V 6A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고7,656
Standard
200V
6A
1.1V @ 6A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBL06-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고2,000
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBL402-G
Comchip Technology

RECTIFIER BRIDGE 4A 200V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고4,976
Standard
200V
4A
1.1V @ 4A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
B40C800DM-E3/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 65V DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 65V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 65V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고7,488
Standard
65V
900mA
1V @ 900mA
10µA @ 65V
-40°C ~ 125°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
B483F-2T
Crydom Co.

MOD DIODE PWR 35A 480VAC PNL MNT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: B48 Module
  • Supplier Device Package: -
패키지: B48 Module
재고3,120
Standard
1200V
35A
1.35V @ 50A
-
-40°C ~ 125°C (TJ)
Chassis Mount
B48 Module
-
hot GBU608
Diodes Incorporated

RECT BRIDGE GPP 6A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고299,844
Standard
800V
6A
1V @ 3A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot KBU8J
GeneSiC Semiconductor

DIODE BRIDGE 600V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: 4-SIP, KBU
재고3,696
Standard
600V
8A
1V @ 8A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBPC35005W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 35A 50V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고7,596
Standard
50V
35A
1.1V @ 17.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBU15A-BP
Micro Commercial Co

BRIDGE RECTIFIER 15A 50V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고13,254
Standard
50V
15A
1V @ 7.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
MB10FTR
SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 500MA MBF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MBF
패키지: 4-SMD, Gull Wing
재고38,112
Standard
1000V
500mA
1.1V @ 800mA
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MBF
GBU403H
Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
200 V
4 A
1.1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, GBU
GBU
DB101ST-HF
Comchip Technology

BRIDGE RECT 1PHASE 50V 1A DBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBS
패키지: -
Request a Quote
Standard
50 V
1 A
1.1 V @ 1 A
10 µA @ 50 V
-55°C ~ 150°C
Surface Mount
4-SMD, Gull Wing
DBS
DBLS154GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 400V 1.5A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: -
재고9,000
Standard
400 V
1.5 A
1.1 V @ 1.5 A
2 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
KBJ1004G-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
패키지: -
Request a Quote
Standard
400 V
10 A
1 V @ 5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
TS50P06G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 50A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
재고3,591
Standard
800 V
50 A
1.1 V @ 25 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
NTE5303
NTE Electronics, Inc

R-BRIDGE 1000V 8 AMP SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIP
패키지: -
Request a Quote
Standard
1 kV
8 A
1 V @ 8 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIP
GBU4JL-5707E3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DB35-16
Diotec Semiconductor

3PH BRIDGE DB 1600V 35A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, DB-35
  • Supplier Device Package: DB
패키지: -
재고345
Standard
1.6 kV
35 A
1.05 V @ 17.5 A
10 µA @ 1600 V
-50°C ~ 150°C (TJ)
Chassis Mount
5-Square, DB-35
DB
KBJL1010G-BP
Micro Commercial Co

DIODE BRIDGE KBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJL
  • Supplier Device Package: KBJL
패키지: -
Request a Quote
Standard
1 kV
10 A
1.1 V @ 5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJL
KBJL
469-3
Microchip Technology

SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 15.7 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 600 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
600 V
10 A
1.35 V @ 15.7 A
2 µA @ 600 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square
-
KBU606G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 6A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: -
재고1,368
Standard
800 V
6 A
1.1 V @ 6 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBU601G
Taiwan Semiconductor Corporation

DIODE BRIDGE 6A 50V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: -
Request a Quote
Standard
50 V
6 A
1.1 V @ 6 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
SDB203L-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: SDBL-1
패키지: -
Request a Quote
Standard
200 V
2 A
1.1 V @ 2 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
SDBL-1