페이지 187 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2KBP10ML-001E4/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 1PHASE 1KV 2A KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고7,840	Standard	1000V	2A	1.1V @ 3.14A	5µA @ 1000V	-55°C ~ 165°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
VUC25-16GO2	IXYS	DIODE BRIDGE FAST 1600V KAMM-MOD Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A Current - Reverse Leakage @ Vr: 5mA @ 1600V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: KAMM Supplier Device Package: KAMM	패키지: KAMM	재고3,328	Standard	1600V	25A	2.2V @ 55A	5mA @ 1600V	-40°C ~ 125°C (TJ)	Chassis Mount	KAMM	KAMM
4GBL01	Vishay Semiconductor Diodes Division	BRIDGE SGL PHASE 100V 4A 4-GBL Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고2,208	Standard	100V	4A	-	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
UGB6124AG	IXYS	IC MOD DIODE 1PHASE BRIDGE UGB1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 10500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: UGB-1 Supplier Device Package: UGB-1	패키지: UGB-1	재고4,336	Standard	10500V	1A	-	-	150°C (TJ)	Chassis Mount	UGB-1	UGB-1
VBO25-12AO2	IXYS	DIODE BRIDGE 31A 1200V AVAL FO-A Diode Type: Single Phase Technology: Avalanche Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 38A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	패키지: 4-Square, FO-A	재고3,920	Avalanche	1200V	38A	1.36V @ 55A	300µA @ 1200V	-40°C ~ 150°C (TJ)	QC Terminal	4-Square, FO-A	FO-A
VBO30-08NO7	IXYS	DIODE BRIDGE 35A 800V PWS-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Current - Reverse Leakage @ Vr: 40µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-A Supplier Device Package: PWS-A	패키지: PWS-A	재고2,928	Standard	800V	35A	1.1V @ 15A	40µA @ 800V	-40°C ~ 150°C (TJ)	Chassis Mount	PWS-A	PWS-A
GBPC2510(UM)E4/51	Vishay Semiconductor Diodes Division	DIODE 1PH 25A 1000V GBPC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고7,680	Standard	1000V	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBJ2008-F	Diodes Incorporated	RECT BRIDGE GPP 800V 20A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고11,784	Standard	800V	20A	1.05V @ 10A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
KBPC1006W-G	Comchip Technology	RECTIFIER BRIDGE 10A 600V KBPCW Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	패키지: 4-Square, KBPC-W	재고6,368	Standard	600V	10A	1.1V @ 5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC-W	KBPC-W
BU15085S-M3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 15A 800V BU-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Supplier Device Package: isoCINK+? BU-5S	패키지: 4-SIP, BU-5S	재고5,376	Standard	800V	15A	1.05V @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU-5S	isoCINK+? BU-5S
KBP206G	GeneSiC Semiconductor	DIODE BRIDGE 2A 600V 1PH KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: 4-SIP, KBP	재고103,896	Standard	600V	2A	1.1V @ 2A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
DF1506S-E3/77	Vishay Semiconductor Diodes Division	DIODE GPP 1.5A 600V 4SMD Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DFS	패키지: 4-SMD, Gull Wing	재고4,704	Standard	600V	1.5A	1.1V @ 1.5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DFS
ABS4HRGG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: 4-SMD, Gull Wing	재고6,112	Standard	400V	800mA	950mV @ 400mA	10µA @ 400V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
GBPC2504W-E4/51	Vishay Semiconductor Diodes Division	DIODE 1PH 25A 400V GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고3,744	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
MSD100-08	Microsemi Corporation	DIODE BRIDGE 800V 100A SM3 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Reverse Leakage @ Vr: 300µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SM3-20H Supplier Device Package: M3	패키지: SM3-20H	재고6,012	Standard	800V	100A	1.9V @ 300A	300µA @ 800V	-40°C ~ 150°C (TJ)	Chassis Mount	SM3-20H	M3
DF06SA-E3/77	Vishay Semiconductor Diodes Division	DIODE GPP 1A 600V 4SMD Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DFS	패키지: 4-SMD, Gull Wing	재고72,000	Standard	600V	1A	1.1V @ 1A	5µA @ 600V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DFS
1N4438F	Microchip Technology	STD RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -65°C ~ 160°C Mounting Type: Chassis Mount Package / Case: Press Fit Supplier Device Package: Press Fit	패키지: -	Request a Quote	Standard	600 V	10 A	1.2 V @ 10 A	10 µA @ 600 V	-65°C ~ 160°C	Chassis Mount	Press Fit	Press Fit
NTE5320	NTE Electronics, Inc	R-SI BRIDGE 1KV 4A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: 4-SIP	패키지: -	Request a Quote	Standard	1 kV	4 A	1 V @ 3 A	10 µA @ 1000 V	-55°C ~ 125°C (TJ)	Through Hole	4-ESIP	4-SIP
MDMA240UB1600ED	IXYS	BIPOLARMODULE-RECTIFIER+BRAKE E2 Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 240 A Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 240 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: -	Request a Quote	Standard	1.2 kV	240 A	1.92 V @ 240 A	100 µA @ 1600 V	-40°C ~ 150°C (TJ)	Chassis Mount	E2	E2
GBJL2506-BP	Micro Commercial Co	DIODE BRIDGE GBJL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, GBJL Supplier Device Package: GBJL	패키지: -	Request a Quote	Standard	600 V	25 A	1.05 V @ 12.5 A	10 µA @ 600 V	-55°C ~ 150°C	Through Hole	4-SIP, GBJL	GBJL
GBS4M	Diotec Semiconductor	BRIDGE 1PH GBS_SIL-1.5-2.3 1000V Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP Supplier Device Package: 4-SIP	패키지: -	Request a Quote	Standard	1 kV	2.3 A	1.05 V @ 2 A	5 µA @ 1000 V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP	4-SIP
KBP301-BP	Micro Commercial Co	BRIDGE RECT 100V 3A KBPR Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Operating Temperature: -55°C ~ 125°C Mounting Type: Through Hole Package / Case: 4-SIP, KBPR Supplier Device Package: KBPR	패키지: -	Request a Quote	Standard	100 V	3 A	1.1 V @ 1 A	10 µA @ 100 V	-55°C ~ 125°C	Through Hole	4-SIP, KBPR	KBPR
KBP106G-C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 1A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: -	Request a Quote	Standard	800 V	1 A	1 V @ 1 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
UG6KB20	SMC Diode Solutions	BRIDGE RECT 1PHASE 200V 6A D3K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: D3K	패키지: -	Request a Quote	Standard	200 V	6 A	1.1 V @ 6 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	D3K
KBU1004G-T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 10A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	Request a Quote	Standard	400 V	10 A	1.1 V @ 10 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
GBL005E-E3-A	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 50V 3A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote	Standard	50 V	3 A	1 V @ 4 A	5 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
KBU603G	Taiwan Semiconductor Corporation	DIODE BRIDGE 6A 200V KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	Request a Quote	Standard	200 V	6 A	1.1 V @ 6 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
KBJ401G-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	패키지: -	Request a Quote	Standard	100 V	4 A	1 V @ 2 A	5 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJ	KBJ

2KBP10ML-001E4/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 1KV 2A KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고7,840

Standard

1000V

2A

1.1V @ 3.14A

5µA @ 1000V

-55°C ~ 165°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

VUC25-16GO2

IXYS

DIODE BRIDGE FAST 1600V KAMM-MOD

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: KAMM
Supplier Device Package: KAMM

패키지: KAMM

재고3,328

Standard

1600V

25A

2.2V @ 55A

5mA @ 1600V

-40°C ~ 125°C (TJ)

Chassis Mount

KAMM

4GBL01

Vishay Semiconductor Diodes Division

BRIDGE SGL PHASE 100V 4A 4-GBL

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고2,208

Standard

100V

4A

-

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

UGB6124AG

IXYS

IC MOD DIODE 1PHASE BRIDGE UGB1

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 10500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: UGB-1
Supplier Device Package: UGB-1

패키지: UGB-1

재고4,336

Standard

10500V

1A

-

150°C (TJ)

Chassis Mount

UGB-1

VBO25-12AO2

IXYS

DIODE BRIDGE 31A 1200V AVAL FO-A

Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 38A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-A
Supplier Device Package: FO-A

패키지: 4-Square, FO-A

재고3,920

Avalanche

1200V

38A

1.36V @ 55A

300µA @ 1200V

-40°C ~ 150°C (TJ)

QC Terminal

4-Square, FO-A

FO-A

VBO30-08NO7

IXYS

DIODE BRIDGE 35A 800V PWS-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Current - Reverse Leakage @ Vr: 40µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-A
Supplier Device Package: PWS-A

패키지: PWS-A

재고2,928

Standard

800V

35A

1.1V @ 15A

40µA @ 800V

-40°C ~ 150°C (TJ)

Chassis Mount

PWS-A

GBPC2510(UM)E4/51

Vishay Semiconductor Diodes Division

DIODE 1PH 25A 1000V GBPC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: 4-Square, GBPC

재고7,680

Standard

1000V

25A

1.1V @ 12.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBJ2008-F

Diodes Incorporated

RECT BRIDGE GPP 800V 20A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고11,784

Standard

800V

20A

1.05V @ 10A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

KBPC1006W-G

Comchip Technology

RECTIFIER BRIDGE 10A 600V KBPCW

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

패키지: 4-Square, KBPC-W

재고6,368

Standard

600V

10A

1.1V @ 5A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, KBPC-W

KBPC-W

BU15085S-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 15A 800V BU-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Supplier Device Package: isoCINK+? BU-5S

패키지: 4-SIP, BU-5S

재고5,376

Standard

800V

15A

1.05V @ 7.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU-5S

isoCINK+? BU-5S

KBP206G

GeneSiC Semiconductor

DIODE BRIDGE 2A 600V 1PH KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: 4-SIP, KBP

재고103,896

Standard

600V

2A

1.1V @ 2A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP

DF1506S-E3/77

Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V 4SMD

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DFS

패키지: 4-SMD, Gull Wing

재고4,704

Standard

600V

1.5A

1.1V @ 1.5A

10µA @ 600V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DFS

ABS4HRGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: 4-SMD, Gull Wing

재고6,112

Standard

400V

800mA

950mV @ 400mA

10µA @ 400V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

GBPC2504W-E4/51

Vishay Semiconductor Diodes Division

DIODE 1PH 25A 400V GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고3,744

Standard

400V

25A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

MSD100-08

Microsemi Corporation

DIODE BRIDGE 800V 100A SM3

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SM3-20H
Supplier Device Package: M3

패키지: SM3-20H

재고6,012

Standard

800V

100A

1.9V @ 300A

300µA @ 800V

-40°C ~ 150°C (TJ)

Chassis Mount

SM3-20H

M3

DF06SA-E3/77

Vishay Semiconductor Diodes Division

DIODE GPP 1A 600V 4SMD

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DFS

패키지: 4-SMD, Gull Wing

재고72,000

Standard

600V

1A

1.1V @ 1A

5µA @ 600V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DFS

1N4438F

Microchip Technology

STD RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -65°C ~ 160°C
Mounting Type: Chassis Mount
Package / Case: Press Fit
Supplier Device Package: Press Fit

패키지: -

Request a Quote

Standard

600 V

10 A

1.2 V @ 10 A

10 µA @ 600 V

-65°C ~ 160°C

Chassis Mount

Press Fit

NTE5320

NTE Electronics, Inc

R-SI BRIDGE 1KV 4A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: 4-SIP

패키지: -

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Standard

1 kV

4 A

1 V @ 3 A

10 µA @ 1000 V

-55°C ~ 125°C (TJ)

Through Hole

4-ESIP

4-SIP

MDMA240UB1600ED

IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 240 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 240 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: -

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Standard

1.2 kV

240 A

1.92 V @ 240 A

100 µA @ 1600 V

-40°C ~ 150°C (TJ)

Chassis Mount

E2

GBJL2506-BP

Micro Commercial Co

DIODE BRIDGE GBJL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJL
Supplier Device Package: GBJL

패키지: -

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Standard

600 V

25 A

1.05 V @ 12.5 A

10 µA @ 600 V

-55°C ~ 150°C

Through Hole

4-SIP, GBJL

GBJL

GBS4M

Diotec Semiconductor

BRIDGE 1PH GBS_SIL-1.5-2.3 1000V

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP
Supplier Device Package: 4-SIP

패키지: -

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Standard

1 kV

2.3 A

1.05 V @ 2 A

5 µA @ 1000 V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP

KBP301-BP

Micro Commercial Co

BRIDGE RECT 100V 3A KBPR

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPR
Supplier Device Package: KBPR

패키지: -

Request a Quote

Standard

100 V

3 A

1.1 V @ 1 A

10 µA @ 100 V

-55°C ~ 125°C

Through Hole

4-SIP, KBPR

KBPR

KBP106G-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 1A KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: -

Request a Quote

Standard

800 V

1 A

1 V @ 1 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP

UG6KB20

SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 6A D3K

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: D3K

패키지: -

Request a Quote

Standard

200 V

6 A

1.1 V @ 6 A

5 µA @ 200 V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

D3K

KBU1004G-T0G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 400V 10A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: -

Request a Quote

Standard

400 V

10 A

1.1 V @ 10 A

5 µA @ 400 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

GBL005E-E3-A

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 50V 3A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

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Standard

50 V

3 A

1 V @ 4 A

5 µA @ 50 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

KBU603G

Taiwan Semiconductor Corporation

DIODE BRIDGE 6A 200V KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: -

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Standard

200 V

6 A

1.1 V @ 6 A

5 µA @ 200 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

KBJ401G-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ

패키지: -

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Standard

100 V

4 A

1 V @ 2 A

5 µA @ 100 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBJ

KBJ