페이지 202 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  202/271
이미지
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제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DF75R12W1H4FB11BOMA1
Infineon Technologies Industrial Power and Controls Americas

MOD DIODE BRIDGE EASY1B-2-1

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,192
-
-
-
-
-
-
-
-
-
VUO16-16NO1
IXYS

RECT BRIDGE 3PH 20A 1600V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 130°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
패키지: V1-A
재고5,376
Standard
1600V
20A
1.15V @ 7A
300µA @ 1600V
-40°C ~ 130°C (TJ)
Chassis Mount
V1-A
V1-A
BR84DL-BP
Micro Commercial Co

RECT BRIDGE 2A 400V BR-8D

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BR-8D
  • Supplier Device Package: BR-8D
패키지: 4-SIP, BR-8D
재고5,152
Standard
400V
2A
1.1V @ 1A
10µA @ 400V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, BR-8D
BR-8D
hot DB103
Micro Commercial Co

RECTIFIER BRIDGE 1A 200V DB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-1
패키지: 4-EDIP (0.321", 8.15mm)
재고83,868
Standard
200V
1A
1.1V @ 1A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-1
VBO72-08NO7
IXYS

DIODE BRIDGE 800V 72A PWS-D

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 72A
  • Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
패키지: PWS-D
재고6,848
Standard
800V
72A
1.08V @ 30A
100µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-D
PWS-D
VBO25-16AO2
IXYS

BRIDGE RECT SGL PHASE 1600V 38A

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 38A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
패키지: 4-Square, FO-A
재고3,392
Avalanche
1600V
38A
1.36V @ 55A
300µA @ 1600V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-A
FO-A
TS6P07GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고7,920
Standard
1000V
6A
1.1V @ 6A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
BU1206-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 12A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고2,608
Standard
600V
3.4A
1.05V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
GBU401TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
패키지: 4-ESIP
재고6,432
Standard
100V
4A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
B125C800G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 200V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고3,568
Standard
200V
900mA
1V @ 900mA
10µA @ 200V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
B40C1000G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1A 65V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 65V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 65V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고3,936
Standard
65V
1A
1V @ 1A
10µA @ 65V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
B1S-G
Comchip Technology

DIODE BRIDGE 100V 0.8A MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS
패키지: TO-269AA, 4-BESOP
재고6,480
Standard
100V
800mA
1.1V @ 800mA
5µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS
GBL205 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고3,824
Standard
600V
2A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot GBU8K-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 8A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,928
Standard
800V
3.9A
1V @ 8A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot RMB2S-E3/80
Vishay Semiconductor Diodes Division

DIODE 0.5A 200V 150NS MBS

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
패키지: TO-269AA, 4-BESOP
재고19,356
Standard
200V
500mA
1.25V @ 400mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
GHXS015A120S-D1
Global Power Technologies Group

MOD SBD BRIDGE 1200V 15A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고4,384
Silicon Carbide Schottky
1200V
15A
1.7V @ 15A
100µA @ 1200V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
GSIB1540-E3/45
Vishay Semiconductor Diodes Division

DIODE 15A 400V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고9,936
Standard
400V
3.5A
950mV @ 7.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
MB10S-13
Diodes Incorporated

BRIDGE RECT 1PH 1KV 800MA MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS
패키지: TO-269AA, 4-BESOP
재고3,232
Standard
1000V
800mA
1.1V @ 800mA
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS
CBRHD-06 TR13
Central Semiconductor Corp

IC RECT BRIDGE 600V 0.5A HD DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-HD DIP
패키지: 4-SMD, Gull Wing
재고53,754
Standard
600V
500mA
1V @ 400mA
5µA @ 600V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-HD DIP
PB3510-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 35A PB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: isoCINK+? PB
패키지: 4-SIP, PB
재고6,912
Standard
1000V
35A
1.1V @ 17.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
isoCINK+? PB
GBJL3506-BP
Micro Commercial Co

DIODE BRIDGE GBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJL
  • Supplier Device Package: GBJL
패키지: -
Request a Quote
Standard
600 V
35 A
1.05 V @ 17.5 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJL
GBJL
MB256-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MB-35
  • Supplier Device Package: MB-35
패키지: -
Request a Quote
Standard
600 V
25 A
1.1 V @ 12.5 A
10 µA @ 600 V
-55°C ~ 150°C
QC Terminal
4-Square, MB-35
MB-35
B125C1500A
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 250 V
  • Current - Average Rectified (Io): 1.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 250 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIL
패키지: -
Request a Quote
Standard
250 V
1.8 A
1.1 V @ 2 A
5 µA @ 250 V
-50°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIL
UR3KB80
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 3A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
패키지: -
재고4,500
Standard
800 V
3 A
1 V @ 2 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
KBPF406G-B0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 4A KBPF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPF
  • Supplier Device Package: KBPF
패키지: -
Request a Quote
Standard
800 V
4 A
1.1 V @ 4 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPF
KBPF
DB15-01
Diotec Semiconductor

3P Rect, 100V, 15A, 350A, 1.05V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, DB-35
  • Supplier Device Package: DB-35
패키지: -
Request a Quote
Standard
100 V
35 A
1.05 V @ 12.5 A
10 µA @ 100 V
-50°C ~ 150°C (TJ)
Chassis Mount
5-Square, DB-35
DB-35
KBP301G
SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 3A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: KBP
패키지: -
Request a Quote
Standard
100 V
3 A
1.1 V @ 3 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
KBP
GBPC5008
Taiwan Semiconductor Corporation

50A, 800V, STANDARD BRIDGE RECTI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: -
재고564
Standard
800 V
50 A
1.1 V @ 25 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, GBPC
GBPC