페이지 225 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3N248-E4/72
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PH 200V 1.5A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.57A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,008
Standard
200V
1.5A
1.3V @ 1.57A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
CBR10A-J080
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, CM
  • Supplier Device Package: CM
패키지: 4-Square, CM
재고5,664
Avalanche
800V
10A
1.2V @ 5A
10µA @ 800V
-
Through Hole
4-Square, CM
CM
3N247
Fairchild/ON Semiconductor

RECTIFIER BRIDGE 100V 1.5A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,648
Standard
100V
1.5A
1V @ 1A
5µA @ 100V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot VUO68-12NO7
IXYS

RECT BRIDGE 3PH 1200V ECO-PAC1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 68A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
패키지: ECO-PAC1
재고5,136
Standard
1200V
68A
1.5V @ 60A
40µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC1
ECO-PAC1
GBPC4001M T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC40-M
  • Supplier Device Package: GBPC40-M
패키지: 4-Square, GBPC40-M
재고6,672
Standard
100V
40A
1.1V @ 20A
10µA @ 1000V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC40-M
GBPC40-M
GBPC35005T
GeneSiC Semiconductor

DIODE BRIDGE 50V 35A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고3,152
Standard
50V
35A
1.1V @ 17.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
TS4K40HD3G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: TS4K
패키지: 4-SIP, GBL
재고2,496
Standard
400V
4A
1.1V @ 4A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
TS4K
hot GBU10M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,720
Standard
1000V
10A
1.1V @ 10A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU10A
GeneSiC Semiconductor

DIODE BRIDGE 50V 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,160
Standard
50V
10A
1.1V @ 10A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
TS4K80 D3G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: TS4K
패키지: 4-SIP, GBL
재고4,992
Standard
800V
4A
1.1V @ 4A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
TS4K
G3SBA20-M3/45
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 200V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,928
Standard
200V
2.3A
1V @ 2A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G2SB60-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고3,824
Standard
600V
1.5A
1V @ 750mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBL404-G
Comchip Technology

RECTIFIER BRIDGE 4A 400V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고7,184
Standard
400V
4A
1.1V @ 4A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
CD-MBL108S
Bourns Inc.

BRIDGE RECT 1PHASE 800V 1A SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Chip, Concave Terminals
  • Supplier Device Package: -
패키지: Chip, Concave Terminals
재고3,696
Standard
800V
1A
1V @ 1A
5µA @ 800V
-55°C ~ 175°C (TJ)
Surface Mount
Chip, Concave Terminals
-
DB154STR
SMC Diode Solutions

BRIDGE RECT 1PH 400V 1.5A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
패키지: 4-SMD, Gull Wing
재고2,864
Standard
400V
1.5A
1.1V @ 1.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
TS6P05G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고7,680
Standard
600V
6A
1.1V @ 15A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
hot VUO110-12NO7
IXYS

RECT BRIDG 3PH 127A 1200V PWS-E1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 127A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E1
  • Supplier Device Package: PWS-E1
패키지: PWS-E1
재고4,800
Standard
1200V
127A
1.13V @ 50A
100µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-E1
PWS-E1
GBPC1206-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 12A 600V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고9,828
Standard
600V
12A
1.1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
KBP02M-E4/51
Vishay Semiconductor Diodes Division

DIODE 1.5A 200V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고14,376
Standard
200V
1.5A
1V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
HDBL103G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 1A DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: -
재고15,000
Standard
200 V
1 A
1 V @ 1 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
GBU8K-7000M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
800 V
3.9 A
1 V @ 8 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJ6B
GeneSiC Semiconductor

100V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
100 V
6 A
1.05 V @ 3 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
DF75BA80
SanRex Corporation

DIODE MODULE 800V 75A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 75 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 75 A
  • Current - Reverse Leakage @ Vr: 10 mA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
800 V
75 A
1.2 V @ 75 A
10 mA @ 800 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
VS-KBPC810
Vishay General Semiconductor - Diodes Division

BRIDGE 1PH KBPC8-PB10 1000V 150C

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
패키지: -
재고294
Standard
1 kV
8 A
1 V @ 3 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
GBU403
Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
200 V
4 A
1.1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, GBU
GBU
GBU12M
Diotec Semiconductor

1PH BRIDGE GBU 1000V 12A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8.4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
재고2,841
Standard
1 kV
8.4 A
1 V @ 12 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
696-5
Microchip Technology

BRIDGE RECTIFIER

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 500 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 500 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: NC
  • Supplier Device Package: NC
패키지: -
Request a Quote
Standard
500 V
15 A
1.2 V @ 2 A
5 µA @ 500 V
-65°C ~ 150°C (TJ)
Chassis Mount
NC
NC
KBP203G-C2G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: -
Request a Quote
Standard
200 V
2 A
1.2 V @ 2 A
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP