페이지 35 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 887
Language Translation

* Please refer to the English Version as our Official Version.

다이오드 - 브리지 정류기

기록 7,565
페이지  35/271
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP06M-E4/72
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 600V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고3,200
Standard
600V
2A
1.1V @ 3.14A
5µA @ 600V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
MSD50-18
Microsemi Corporation

MOD BRIDGE 3PH 1800V 50A M1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Current - Reverse Leakage @ Vr: 200µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M1
  • Supplier Device Package: -
패키지: M1
재고7,472
Standard
1800V
50A
1.5V @ 100A
200µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
M1
-
KBJ602G
Diodes Incorporated

RECT BRIDGE GPP 6A 200V KBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
패키지: 4-SIP, KBJ
재고3,344
Standard
200V
6A
1V @ 3A
5µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
KBP04M/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1.5A 400V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고3,968
Standard
400V
1.5A
1V @ 1A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
VS-91MT120KPBF
Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 55A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
패키지: MT-K Module
재고2,640
Standard
1200V
90A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MT-K Module
MT-K
hot VUO22-16NO1
IXYS

RECT BRIDGE 3PH 25A 1600V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.19V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
패키지: V1-A
재고6,480
Standard
1600V
25A
1.19V @ 10A
10µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
V1-A
V1-A
VBO78-16NO7
IXYS

DIODE BRIDGE 1600V 76A ECO-PAC2

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 78A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
  • Current - Reverse Leakage @ Vr: 100µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
패키지: ECO-PAC2
재고4,880
Standard
1600V
78A
1.14V @ 40A
100µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC2
ECO-PAC2
GBPC3502-G
Comchip Technology

RECTIFIER BRIDGE 35A 200V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고3,472
Standard
200V
35A
1.1V @ 17.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
GBJ2510-G
Comchip Technology

BRIDGE DIODE 25A 1000V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고5,104
Standard
1000V
25A
1V @ 12.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
KBPC3502T
GeneSiC Semiconductor

DIODE BRIDGE 200V 35A KBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC-T
  • Supplier Device Package: KBPC
패키지: 4-Square, KBPC-T
재고3,888
Standard
200V
35A
1.1V @ 17.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC-T
KBPC
BU1008A5S-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU-5S
  • Supplier Device Package: isoCINK+? BU-5S
패키지: 4-SIP, BU-5S
재고7,712
Standard
800V
10A
1.1V @ 5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU-5S
isoCINK+? BU-5S
GBU4K-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고5,216
Standard
800V
4A
1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4M-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 1000V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고2,512
Standard
1000V
3A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU4J-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고6,528
Standard
600V
3A
1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
SBR2A40BLP-13
Diodes Incorporated

DIODE SBR 2A 40V V-DFN5060-4

  • Diode Type: Single Phase
  • Technology: Super Barrier
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Current - Reverse Leakage @ Vr: 100nA @ 40V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VDFN
  • Supplier Device Package: V-DFN5060-4
패키지: 4-VDFN
재고6,304
Super Barrier
40V
2A
500mV @ 2A
100nA @ 40V
-55°C ~ 150°C (TJ)
Surface Mount
4-VDFN
V-DFN5060-4
DB152STR
SMC Diode Solutions

BRIDGE RECT 1PH 100V 1.5A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
패키지: 4-SMD, Gull Wing
재고3,728
Standard
100V
1.5A
1.1V @ 1.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
Z4GP210L-HF
Comchip Technology

RECT BRIDGE GP 1000V 2A ABSZ4

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: ABS(Z4)
패키지: 4-SMD, No Lead
재고7,168
Standard
1000V
2A
950mV @ 2A
5µA @ 1000V
-55°C ~ 175°C (TJ)
Surface Mount
4-SMD, No Lead
ABS(Z4)
GBJ2508-BP
Micro Commercial Co

RECT BRIDGE GPP 25A 800V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고6,800
Standard
800V
25A
1.05V @ 12.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
hot GBPC1504W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 15A 400V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고17,412
Standard
400V
15A
1.1V @ 7.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBJ25005-F
Diodes Incorporated

RECT BRIDGE GPP 50V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고7,856
Standard
50V
25A
1.05V @ 12.5A
10µA @ 50V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBPC5010W-G
Comchip Technology

RECT BRIDGE GPP 1000V 50A GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고59,982
Standard
1000V
50A
1.1V @ 25A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC1201W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 12A 100V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고22,698
Standard
100V
12A
1.1V @ 6A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBJ2504-05-G
Comchip Technology

BRIDGE RECT 1PHASE 400V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
400 V
25 A
1 V @ 12.5 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TS40P06G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 40A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 40 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
재고3,600
Standard
800 V
40 A
1.1 V @ 20 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ35005
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 35A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
50 V
35 A
1.1 V @ 35 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
RTBS30M-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TBS
패키지: -
Request a Quote
Standard
1 kV
3 A
1.3 V @ 1.5 A
5 µA @ 1000 V
-55°C ~ 150°C
Surface Mount
4-SMD, Flat Leads
4-TBS
KBP3005G
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 3A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: KBP
패키지: -
Request a Quote
Standard
50 V
3 A
1.1 V @ 3 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
KBP
YBS2207G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2.2A YBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2.2 A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 2.2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: YBS
패키지: -
재고8,526
Standard
1 kV
2.2 A
970 mV @ 2.2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
YBS