페이지 476 - 다이오드 - 정류기 - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 어레이

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제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
STPS20L60CTN
STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350µA @ 60V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB Narrow Leads
패키지: TO-220-3
재고7,296
Schottky
60V
10A
600mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 60V
150°C (Max)
Through Hole
TO-220-3
TO-220AB Narrow Leads
MBRTA80020R
GeneSiC Semiconductor

DIODE SCHOTTKY 20V 400A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 400A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고7,632
Schottky
20V
400A
720mV @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBRT60020RL
GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고4,032
Schottky
20V
300A
580mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 20V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
VS-30CPQ100GPBF
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 280µA @ 100V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,840
Schottky
100V
30A
1.05V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
280µA @ 100V
175°C (Max)
Through Hole
TO-247-3
TO-247AC
hot MBR20200CT
ON Semiconductor

DIODE ARRAY SCHOTTKY 200V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고516,816
Schottky
200V
10A
900mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
hot 113CNQ100ASM
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V D618SM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 55A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 55A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: D-61-8-SM
  • Supplier Device Package: D-61-8-SM
패키지: D-61-8-SM
재고3,840
Schottky
100V
55A
810mV @ 55A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-55°C ~ 175°C
Through Hole
D-61-8-SM
D-61-8-SM
80CNQ040ASM
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V D618SM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 40V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: D-61-8-SM
  • Supplier Device Package: D-61-8-SM
패키지: D-61-8-SM
재고5,520
Schottky
40V
40A
520mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 40V
-55°C ~ 150°C
Through Hole
D-61-8-SM
D-61-8-SM
IRKC91/14A
Vishay Semiconductor Diodes Division

DIODE MODULE 1.4KV 100A ADDAPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 1400V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (3)
  • Supplier Device Package: ADD-A-PAK?
패키지: ADD-A-PAK (3)
재고5,856
Standard
1400V
100A
-
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 1400V
-
Chassis Mount
ADD-A-PAK (3)
ADD-A-PAK?
SCPND5
Semtech Corporation

ASSY DOUBLER 5KV 2.75A STD REC

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 5000V
  • Current - Average Rectified (Io) (per Diode): 2.75A
  • Voltage - Forward (Vf) (Max) @ If: 5V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2000ns
  • Current - Reverse Leakage @ Vr: 1µA @ 5000V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: -
패키지: Module
재고5,024
-
5000V
2.75A
5V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2000ns
1µA @ 5000V
-55°C ~ 150°C
-
Module
-
MBRT600200R
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 300A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고6,816
Schottky
200V
300A
920mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBR60030CT
GeneSiC Semiconductor

DIODE MODULE 30V 300A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
패키지: Twin Tower
재고7,232
Schottky
30V
300A
750mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Chassis Mount
Twin Tower
Twin Tower
hot MEA250-12DA
IXYS

DIODE MODULE 1.2KV 260A Y4-M6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 260A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 12mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
  • Supplier Device Package: Y4-M6
패키지: Y4-M6
재고6,112
Standard
1200V
260A
1.8V @ 260A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
12mA @ 1200V
-
Chassis Mount
Y4-M6
Y4-M6
MBR30040CT
GeneSiC Semiconductor

DIODE MODULE 40V 300A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 300A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
패키지: Twin Tower
재고5,744
Schottky
40V
300A (DC)
650mV @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 20V
-
Chassis Mount
Twin Tower
Twin Tower
MBR120200CT
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A 2 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
패키지: Twin Tower
재고3,968
Schottky
200V
60A
920mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-55°C ~ 150°C
Chassis Mount
Twin Tower
Twin Tower
CD611216C
Powerex Inc.

DIODE MODULE 1.2KV 160A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Screw Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,656
Standard
1200V
160A
-
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 1200V
-
Screw Mount
Module
Module
MSRT100100(A)D
GeneSiC Semiconductor

DIODE GEN 1KV 100A 3 TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고7,856
Standard
1000V
100A
1.1V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
DSP8-12S
IXYS

DIODE ARRAY GP 1200V 11A TO263

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,240
Standard
1200V
11A
1.15V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1200V
-55°C ~ 175°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
SBR30A60CTBQ-13
Diodes Incorporated

DIODE ARRAY SBR 60V 15A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 330µA @ 60V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,488
Super Barrier
60V
15A
630mV @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
330µA @ 60V
-65°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263
hot 32CTQ030-1
SMC Diode Solutions

DIODE SCHOTTKY 30V 15A TO262

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Full Pack, I2Pak
  • Supplier Device Package: TO-262
패키지: TO-262-3 Full Pack, I2Pak
재고5,504
Schottky
30V
15A
580mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 30V
-55°C ~ 150°C
Through Hole
TO-262-3 Full Pack, I2Pak
TO-262
CDBH3-54C-G
Comchip Technology

DIODE ARRAY SCHOTTKY 30V SOT523

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
패키지: SOT-523
재고3,520
Schottky
30V
200mA (DC)
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
125°C (Max)
Surface Mount
SOT-523
SOT-523
MD120K16D1-BP
Micro Commercial Co

DIODE RECT 1600V 120A D1 PAC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1600V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
패키지: D1
재고5,696
Standard
1600V
120A
1.35V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1600V
-40°C ~ 150°C
Chassis Mount
D1
D1
SDURD1030CTTR
SMC Diode Solutions

DIODE ARRAY GEN PURP 300V DPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고25,320
Standard
300V
-
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 300V
-55°C ~ 150°C
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MSRT150120D
GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: -
Request a Quote
Standard
1200 V
150A
1.1 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBRB25H35CTHE3_B-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 35V 15A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 35 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: -
Request a Quote
Schottky
35 V
15A
640 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 35 V
-65°C ~ 175°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
SD1020CS_S2_00001
Panjit International Inc.

DIODE ARR SCHOTT 20V 10A TO252

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
패키지: -
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Schottky
20 V
10A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-55°C ~ 125°C
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
BD1080CS_L2_00001
Panjit International Inc.

DIODE ARR SCHOTT 80V 10A TO252

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 80 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
패키지: -
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Schottky
80 V
10A
800 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 80 V
-65°C ~ 175°C
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
HER1007G
Taiwan Semiconductor Corporation

DIODE ARRAY GP 800V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
재고3,000
Standard
800 V
10A
1.7 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
10 µA @ 800 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
V10K150C-M3-I
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 150V 3A FLATPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 150 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
패키지: -
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Schottky
150 V
3A
1.08 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 150 V
-40°C ~ 150°C
Surface Mount
8-PowerTDFN
FlatPAK (5x6)