페이지 35 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 816
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 3,066
페이지  35/110
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FDB0300N1007L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 200A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8295pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
재고5,744
MOSFET (Metal Oxide)
100V
200A (Tc)
6V, 10V
4V @ 250µA
113nC @ 10V
8295pF @ 50V
±20V
-
3.8W (Ta), 250W (Tc)
3 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FDBL0630N150
Fairchild/ON Semiconductor

MOSFET N-CH 150V 169A H-PSOF8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5805pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tj)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고2,288
MOSFET (Metal Oxide)
150V
169A (Tc)
10V
4V @ 250µA
90nC @ 10V
5805pF @ 75V
±20V
-
500W (Tj)
6.3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
hot FCH165N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 23A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2434pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고103,464
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
3.5V @ 250µA
75nC @ 10V
2434pF @ 380V
±20V
-
227W (Tc)
165 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FCP125N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 29A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고15,624
MOSFET (Metal Oxide)
600V
29A (Tc)
10V
3.5V @ 250µA
95nC @ 10V
2990pF @ 380V
±20V
-
278W (Tc)
125 mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
FCP290N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 17A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3205pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 212W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고19,164
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
4.5V @ 1.7mA
75nC @ 10V
3205pF @ 100V
±20V
-
212W (Tc)
290 mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
FCP104N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4165pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고14,304
MOSFET (Metal Oxide)
600V
37A (Tc)
10V
3.5V @ 250µA
82nC @ 10V
4165pF @ 380V
±20V
-
357W (Tc)
104 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDBL0150N60
Fairchild/ON Semiconductor

MOSFET N-CH 60V 300A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고4,928
MOSFET (Metal Oxide)
60V
240A (Tc)
10V
4V @ 250µA
169nC @ 10V
10300pF @ 30V
±20V
-
357W (Tj)
1.5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
FCH150N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 24A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
패키지: TO-247-3
재고9,084
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
5V @ 2.4mA
94nC @ 10V
3737pF @ 100V
±20V
-
298W (Tc)
150 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
FQA90N15_F109
Fairchild/ON Semiconductor

MOSFET N-CH 150V 90A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고6,444
MOSFET (Metal Oxide)
150V
90A (Tc)
10V
4V @ 250µA
285nC @ 10V
8700pF @ 25V
±25V
-
375W (Tc)
18 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FCPF220N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 23A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,692
MOSFET (Metal Oxide)
800V
23A (Tc)
10V
4.5V @ 2.3mA
105nC @ 10V
4560pF @ 100V
±20V
-
44W (Tc)
220 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FDB0105N407L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 460A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
패키지: TO-263-7, D2Pak (6 Leads + Tab)
재고2,176
MOSFET (Metal Oxide)
40V
460A (Tc)
6V, 10V
4V @ 250µA
291nC @ 10V
23100pF @ 20V
±20V
-
3.8W (Ta), 300W (Tc)
0.8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab)
FCB20N60F_F085
Fairchild/ON Semiconductor

MOSFET N CH 600V 20A TO-263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2035pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 405W (Tc)
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,128
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 250µA
102nC @ 10V
2035pF @ 25V
±30V
-
405W (Tc)
195 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB0190N807L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 270A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 249nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19110pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
재고7,152
MOSFET (Metal Oxide)
80V
270A (Tc)
8V, 10V
4V @ 250µA
249nC @ 10V
19110pF @ 40V
±20V
-
3.8W (Ta), 250W (Tc)
1.7 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hot FQA65N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 65A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고9,648
MOSFET (Metal Oxide)
200V
65A (Tc)
10V
5V @ 250µA
200nC @ 10V
7900pF @ 25V
±30V
-
310W (Tc)
32 mOhm @ 32.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot FQA140N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 140A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고111,420
MOSFET (Metal Oxide)
100V
140A (Tc)
10V
4V @ 250µA
285nC @ 10V
7900pF @ 25V
±25V
-
375W (Tc)
10 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot FDB8030L
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,512
MOSFET (Metal Oxide)
30V
80A (Ta)
4.5V, 10V
2V @ 250µA
170nC @ 5V
10500pF @ 15V
±20V
-
187W (Tc)
3.5 mOhm @ 80A, 10V
-65°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDPF17N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고255,336
MOSFET (Metal Oxide)
600V
17A (Tc)
10V
5V @ 250µA
65nC @ 10V
3040pF @ 25V
±30V
-
62.5W (Tc)
340 mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FDBL0260N100
Fairchild/ON Semiconductor

MOSFET N-CH 100V 200A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9265pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고3,392
MOSFET (Metal Oxide)
100V
200A (Tc)
10V
4V @ 250µA
116nC @ 10V
9265pF @ 50V
±20V
-
3.5W (Ta), 250W (Tc)
2.6 mOhm @ 80A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
FDMT80080DC
Fairchild/ON Semiconductor

MOSFET N-CH 80V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 254A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20720pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-Dual Cool?88
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고5,280
MOSFET (Metal Oxide)
80V
36A (Ta), 254A (Tc)
8V, 10V
4V @ 250µA
273nC @ 10V
20720pF @ 40V
±20V
-
3.2W (Ta), 156W (Tc)
1.35 mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-Dual Cool?88
8-PowerVDFN
FDBL0065N40
Fairchild/ON Semiconductor

MOSFET N-CH 40V 300A H-PSOF8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 296nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tj)
  • Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고7,648
MOSFET (Metal Oxide)
40V
300A (Tc)
10V
4V @ 250µA
296nC @ 10V
15900pF @ 25V
±20V
-
429W (Tj)
0.65 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
hot FCP150N65F
Fairchild/ON Semiconductor

MOSFET N-CH 650V 24A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고4,560
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
5V @ 2.4mA
93nC @ 10V
3737pF @ 100V
±20V
-
298W (Tc)
150 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FCH170N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 22A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고103,704
MOSFET (Metal Oxide)
600V
22A (Tc)
10V
3.5V @ 250µA
55nC @ 10V
2860pF @ 380V
±20V
-
227W (Tc)
170 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FDBL0150N80
Fairchild/ON Semiconductor

MOSFET N-CH 80V 300A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고6,672
MOSFET (Metal Oxide)
80V
300A (Tc)
10V
4V @ 250µA
188nC @ 10V
12800pF @ 25V
±20V
-
429W (Tj)
1.4 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
FDBL0110N60
Fairchild/ON Semiconductor

MOSFET N-CH 60V 300A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13650pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고3,936
MOSFET (Metal Oxide)
60V
300A (Tc)
10V
4V @ 250µA
220nC @ 10V
13650pF @ 30V
±20V
-
429W (Tj)
1.1 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
FDB082N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 117A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,568
MOSFET (Metal Oxide)
150V
117A (Tc)
10V
4V @ 250µA
84nC @ 10V
6040pF @ 25V
±20V
-
294W (Tc)
8.2 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FCP16N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 16A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 134.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고218,460
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
4V @ 250µA
52.3nC @ 10V
2170pF @ 100V
±30V
-
134.4W (Tc)
199 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDB0250N807L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 240A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15400pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
재고6,912
MOSFET (Metal Oxide)
80V
240A (Tc)
8V, 10V
4V @ 250µA
200nC @ 10V
15400pF @ 40V
±20V
-
3.8W (Ta), 214W (Tc)
2.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FCH190N65F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 650V 20.6A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3181pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고8,856
MOSFET (Metal Oxide)
650V
20.6A (Tc)
10V
5V @ 250µA
82nC @ 10V
3181pF @ 25V
±20V
-
208W (Tc)
190 mOhm @ 27A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3