페이지 56 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

FCPF20N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고106,260

MOSFET (Metal Oxide)

600V

20A (Tc)

10V

5V @ 250µA

98nC @ 10V

3080pF @ 25V

±30V

-

39W (Tc)

190 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FQA24N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V 23.5A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고12,948

MOSFET (Metal Oxide)

600V

23.5A (Tc)

10V

5V @ 250µA

145nC @ 10V

5500pF @ 25V

±30V

-

310W (Tc)

240 mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

NTMFS10N3D2C

Fairchild/ON Semiconductor

100V/20V N-CHANNEL PTNG MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고5,744

-

FCPF190N65FL1

Fairchild/ON Semiconductor

MOSFET N-CH 650V 20.6A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3055pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고3,248

MOSFET (Metal Oxide)

650V

20.6A (Tc)

10V

5V @ 250µA

78nC @ 10V

3055pF @ 100V

±20V

-

39W (Tc)

190 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FCPF150N65F

Fairchild/ON Semiconductor

SUPERFET2 150 MOHM 650V FRFET TO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고7,920

MOSFET (Metal Oxide)

650V

14.9A (Tc)

10V

5V @ 2.4mA

94nC @ 10V

3737pF @ 100V

±20V

-

39W (Tc)

150 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FQA11N90_F109

Fairchild/ON Semiconductor

MOSFET N-CH 900V 11.4A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 960 mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고390,000

MOSFET (Metal Oxide)

900V

11.4A (Tc)

10V

5V @ 250µA

94nC @ 10V

3500pF @ 25V

±30V

-

300W (Tc)

960 mOhm @ 5.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

FCMT099N65S3

Fairchild/ON Semiconductor

PQFN88 PKG, 99MOHM, 650V, SUPERF

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고7,280

-

FDBL0200N100

Fairchild/ON Semiconductor

PTNG 100V N-CHANNEL POWER TRENCH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: 8-PowerSFN

패키지: 8-PowerSFN

재고4,336

MOSFET (Metal Oxide)

100V

300A (Tc)

10V

4.5V @ 250µA

133nC @ 10V

-

±20V

-

429W (Tc)

2 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

-

8-PowerSFN

FCPF099N65S3

Fairchild/ON Semiconductor

SUPERFET3 650V,99 MOHM

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고2,272

-

FDA20N50_F109

Fairchild/ON Semiconductor

MOSFET N-CH 500V 22A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고6,896

MOSFET (Metal Oxide)

500V

22A (Tc)

10V

5V @ 250µA

59.5nC @ 10V

3120pF @ 25V

±30V

-

280W (Tc)

230 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

FDMT1D3N08B

Fairchild/ON Semiconductor

MV7 80V N CH DUAL COOL POWERTREN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,832

-

FDA16N50_F109

Fairchild/ON Semiconductor

MOSFET N-CH 500V 16.5A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고6,060

MOSFET (Metal Oxide)

500V

16.5A (Tc)

10V

5V @ 250µA

45nC @ 10V

1945pF @ 25V

±30V

-

205W (Tc)

380 mOhm @ 8.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

FDA70N20

Fairchild/ON Semiconductor

MOSFET N-CH 200V 70A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고6,176

MOSFET (Metal Oxide)

200V

70A (Tc)

10V

5V @ 250µA

86nC @ 10V

3970pF @ 25V

±30V

-

417W (Tc)

35 mOhm @ 35A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

FCP190N60E

Fairchild/ON Semiconductor

MOSFET N-CH 600V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

패키지: TO-220-3

재고404,628

MOSFET (Metal Oxide)

600V

20.6A (Tc)

10V

3.5V @ 250µA

82nC @ 10V

3175pF @ 25V

±20V

-

208W (Tc)

190 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

FCP099N65S3

Fairchild/ON Semiconductor

SUPERFET3 650V, 99 MOHM,TO220 PK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,224

-

FCP13N60N

Fairchild/ON Semiconductor

MOSFET N-CH 600V 13A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 116W (Tc)
Rds On (Max) @ Id, Vgs: 258 mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

패키지: TO-220-3

재고51,600

MOSFET (Metal Oxide)

600V

13A (Tc)

10V

4V @ 250µA

39.5nC @ 10V

1765pF @ 100V

±30V

-

116W (Tc)

258 mOhm @ 6.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

FDP038AN06A0_F102

Fairchild/ON Semiconductor

60V 80A 3.8 OHMS NCH POWER TRENC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고3,904

MOSFET (Metal Oxide)

60V

80A (Tc)

6V, 10V

4V @ 250µA

124nC @ 10V

6400pF @ 25V

±20V

-

310W (Tc)

3.8 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FDA16N50LDTU

Fairchild/ON Semiconductor

UNIFET N-CHANNEL 500V MOSFET LDT

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고5,344

MOSFET (Metal Oxide)

500V

16.5A (Tc)

10V

5V @ 250µA

45nC @ 10V

1945pF @ 25V

±30V

-

205W (Tc)

380 mOhm @ 8.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3

TO-3P-3, SC-65-3

FCPF9N60NTYDTU

Fairchild/ON Semiconductor

MOSFET N-CH 600V 9A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3 (Y-Forming)
Package / Case: TO-220-3 Full Pack, Formed Leads

패키지: TO-220-3 Full Pack, Formed Leads

재고6,928

MOSFET (Metal Oxide)

600V

9A (Tc)

10V

4V @ 250µA

29nC @ 10V

1240pF @ 100V

±30V

-

29.8W (Tc)

385 mOhm @ 4.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F-3 (Y-Forming)

TO-220-3 Full Pack, Formed Leads

FDBL86062_F085

Fairchild/ON Semiconductor

PTNG 100V N-CHANNEL POWER TRENCH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: 8-PowerSFN

패키지: 8-PowerSFN

재고5,024

MOSFET (Metal Oxide)

100V

300A (Tc)

10V

4.5V @ 250µA

124nC @ 10V

-

±20V

-

429W (Tc)

2 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

-

8-PowerSFN

FCA20N60_F109

Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고7,152

MOSFET (Metal Oxide)

600V

20A (Tc)

10V

5V @ 250µA

98nC @ 10V

3080pF @ 25V

±30V

-

208W (Tc)

190 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

FCA20N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고91,440

MOSFET (Metal Oxide)

600V

20A (Tc)

10V

5V @ 250µA

98nC @ 10V

3080pF @ 25V

±30V

-

208W (Tc)

190 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

FDP047AN08A0_F102

Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-220AB-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고3,504

MOSFET (Metal Oxide)

75V

-

6V, 10V

-

±20V

-

310W (Tc)

-

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FDMT80040DC

Fairchild/ON Semiconductor

MV8 40V NCH DUAL COOL POWERTRENC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (8x8)
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고4,320

MOSFET (Metal Oxide)

40V

420A (Tc)

6V, 10V

4V @ 250µA

338nC @ 10V

-

±20V

-

156W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (8x8)

8-PowerVDFN

FDB9503L_F085

Fairchild/ON Semiconductor

P-CHANNEL LOGIC LEVEL POWERTRENC

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고2,144

-

FCPF125N65S3

Fairchild/ON Semiconductor

SUPERFET3 650V 125 MOHM, TO220F

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,528

-

NTMFS08N004C

Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고5,488

-

FDBL0330N80

Fairchild/ON Semiconductor

MOSFET N-CH 80V 220A 8PSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PSOF
Package / Case: 8-PowerSFN

패키지: 8-PowerSFN

재고3,808

MOSFET (Metal Oxide)

80V

220A (Tc)

10V

4V @ 250µA

112nC @ 10V

6320pF @ 40V

±20V

-

300W (Tc)

3 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-PSOF

8-PowerSFN

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FCPF20N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고106,260	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	39W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQA24N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 23.5A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고12,948	MOSFET (Metal Oxide)	600V	23.5A (Tc)	10V	5V @ 250µA	145nC @ 10V	5500pF @ 25V	±30V	-	310W (Tc)	240 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
NTMFS10N3D2C	Fairchild/ON Semiconductor	100V/20V N-CHANNEL PTNG MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,744	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCPF190N65FL1	Fairchild/ON Semiconductor	MOSFET N-CH 650V 20.6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3055pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고3,248	MOSFET (Metal Oxide)	650V	20.6A (Tc)	10V	5V @ 250µA	78nC @ 10V	3055pF @ 100V	±20V	-	39W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF150N65F	Fairchild/ON Semiconductor	SUPERFET2 150 MOHM 650V FRFET TO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고7,920	MOSFET (Metal Oxide)	650V	14.9A (Tc)	10V	5V @ 2.4mA	94nC @ 10V	3737pF @ 100V	±20V	-	39W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQA11N90_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11.4A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 960 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고390,000	MOSFET (Metal Oxide)	900V	11.4A (Tc)	10V	5V @ 250µA	94nC @ 10V	3500pF @ 25V	±30V	-	300W (Tc)	960 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCMT099N65S3	Fairchild/ON Semiconductor	PQFN88 PKG, 99MOHM, 650V, SUPERF FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고7,280	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDBL0200N100	Fairchild/ON Semiconductor	PTNG 100V N-CHANNEL POWER TRENCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-PowerSFN	패키지: 8-PowerSFN	재고4,336	MOSFET (Metal Oxide)	100V	300A (Tc)	10V	4.5V @ 250µA	133nC @ 10V	-	±20V	-	429W (Tc)	2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	-	8-PowerSFN
FCPF099N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V,99 MOHM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,272	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDA20N50_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 22A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고6,896	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	5V @ 250µA	59.5nC @ 10V	3120pF @ 25V	±30V	-	280W (Tc)	230 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDMT1D3N08B	Fairchild/ON Semiconductor	MV7 80V N CH DUAL COOL POWERTREN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,832	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDA16N50_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 16.5A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고6,060	MOSFET (Metal Oxide)	500V	16.5A (Tc)	10V	5V @ 250µA	45nC @ 10V	1945pF @ 25V	±30V	-	205W (Tc)	380 mOhm @ 8.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDA70N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 70A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고6,176	MOSFET (Metal Oxide)	200V	70A (Tc)	10V	5V @ 250µA	86nC @ 10V	3970pF @ 25V	±30V	-	417W (Tc)	35 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCP190N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: TO-220-3	재고404,628	MOSFET (Metal Oxide)	600V	20.6A (Tc)	10V	3.5V @ 250µA	82nC @ 10V	3175pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCP099N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V, 99 MOHM,TO220 PK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,224	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCP13N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 13A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 116W (Tc) Rds On (Max) @ Id, Vgs: 258 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: TO-220-3	재고51,600	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	39.5nC @ 10V	1765pF @ 100V	±30V	-	116W (Tc)	258 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDP038AN06A0_F102	Fairchild/ON Semiconductor	60V 80A 3.8 OHMS NCH POWER TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고3,904	MOSFET (Metal Oxide)	60V	80A (Tc)	6V, 10V	4V @ 250µA	124nC @ 10V	6400pF @ 25V	±20V	-	310W (Tc)	3.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDA16N50LDTU	Fairchild/ON Semiconductor	UNIFET N-CHANNEL 500V MOSFET LDT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고5,344	MOSFET (Metal Oxide)	500V	16.5A (Tc)	10V	5V @ 250µA	45nC @ 10V	1945pF @ 25V	±30V	-	205W (Tc)	380 mOhm @ 8.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-3P-3, SC-65-3
FCPF9N60NTYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 9A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29.8W (Tc) Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	패키지: TO-220-3 Full Pack, Formed Leads	재고6,928	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	29nC @ 10V	1240pF @ 100V	±30V	-	29.8W (Tc)	385 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
FDBL86062_F085	Fairchild/ON Semiconductor	PTNG 100V N-CHANNEL POWER TRENCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-PowerSFN	패키지: 8-PowerSFN	재고5,024	MOSFET (Metal Oxide)	100V	300A (Tc)	10V	4.5V @ 250µA	124nC @ 10V	-	±20V	-	429W (Tc)	2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	-	8-PowerSFN
FCA20N60_F109	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고7,152	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCA20N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고91,440	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDP047AN08A0_F102	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-220AB-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고3,504	MOSFET (Metal Oxide)	75V	-	6V, 10V	-	-	-	±20V	-	310W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMT80040DC	Fairchild/ON Semiconductor	MV8 40V NCH DUAL COOL POWERTRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (8x8) Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고4,320	MOSFET (Metal Oxide)	40V	420A (Tc)	6V, 10V	4V @ 250µA	338nC @ 10V	-	±20V	-	156W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (8x8)	8-PowerVDFN
FDB9503L_F085	Fairchild/ON Semiconductor	P-CHANNEL LOGIC LEVEL POWERTRENC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,144	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCPF125N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V 125 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMFS08N004C	Fairchild/ON Semiconductor	80V/20V N-CHANNEL PTNG MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDBL0330N80	Fairchild/ON Semiconductor	MOSFET N-CH 80V 220A 8PSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	패키지: 8-PowerSFN	재고3,808	MOSFET (Metal Oxide)	80V	220A (Tc)	10V	4V @ 250µA	112nC @ 10V	6320pF @ 40V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN