Fairchild/ON Semiconductor 제품

2N5460_D75Z

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

• FET Type: P-Channel
• Voltage - Breakdown (V(BR)GSS): 40V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
• Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
• Resistance - RDS(On): -
• Power - Max: 350mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

MMBF4392

Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W SOT-23

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 30V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
• Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
• Resistance - RDS(On): 60 Ohm
• Power - Max: 350mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

SGW5N60RUFDTM

Fairchild/ON Semiconductor

IGBT 600V 8A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 15A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
• Power - Max: 60W
• Switching Energy: 88µJ (on), 107µJ (off)
• Input Type: Standard
• Gate Charge: 16nC
• Td (on/off) @ 25°C: 13ns/34ns
• Test Condition: 300V, 5A, 40 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FCPF20N60FS

Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F-3
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

HUF75639S3S

Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB7N10LTM

Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.3A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDH15N50

Fairchild/ON Semiconductor

MOSFET N-CH 500V 15A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

패키지: TO-247-3

FDMC8010ET30

Fairchild/ON Semiconductor

MOSFET N-CH 30V 30A 8-PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Power33
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

FQB10N50CFTM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 10A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 143W (Tc)
• Rds On (Max) @ Id, Vgs: 610 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB20N50F

Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB7N60TM

Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.4A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDS3692

Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.5A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 746pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

FQD5P10TM

Fairchild/ON Semiconductor

MOSFET P-CH 100V 3.6A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

MMBFJ304

Fairchild/ON Semiconductor

JFET N-CH 30V 15MA SOT23

• Transistor Type: N-Channel JFET
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: 15mA
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 30V
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

패키지: TO-236-3, SC-59, SOT-23-3

FDPC3D5N025X9D

Fairchild/ON Semiconductor

25V SYMMETRIC DUAL N-CHANNEL MOS

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 74A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 26W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

패키지: -

FJP3305H2

Fairchild/ON Semiconductor

TRANS NPN 400V 4A TO-220

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
• Power - Max: 75W
• Frequency - Transition: 4MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

BC337

Fairchild/ON Semiconductor

TRANS NPN 45V 0.8A TO-92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

FJN3314RBU

Fairchild/ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

1N966B

Fairchild/ON Semiconductor

DIODE ZENER 16V 500MW DO35

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

DFB2040

Fairchild/ON Semiconductor

BRIDGE RECT 400V 20A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

74AC153MTC

Fairchild/ON Semiconductor

MULTIPLEXER DUAL 4IN HS 16TSSOP

• Type: Multiplexer
• Circuit: 2 x 4:1
• Independent Circuits: 1
• Current - Output High, Low: 24mA, 24mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

74VHC32N

Fairchild/ON Semiconductor

IC GATE OR 4CH 2-INP 14-DIP

• Logic Type: OR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Supplier Device Package: 14-PDIP
• Package / Case: 14-DIP (0.300", 7.62mm)

패키지: 14-DIP (0.300", 7.62mm)

MM74HC4060SJ

Fairchild/ON Semiconductor

IC COUNTER 14STG BINARY 16-SOP

• Logic Type: Binary Counter
• Direction: Up
• Number of Elements: 1
• Number of Bits per Element: 14
• Reset: Asynchronous
• Timing: -
• Count Rate: 30MHz
• Trigger Type: Negative Edge
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 16-SOP

패키지: 16-SOIC (0.209", 5.30mm Width)

QTLP321CR

Fairchild/ON Semiconductor

LED RED 4DIP THROUGH HOLE

• Color: Red
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: -
• Lens Style/Size: Round with Domed Top, 3.00mm
• Voltage - Forward (Vf) (Typ): 2.2V
• Current - Test: 70mA
• Viewing Angle: 50°
• Mounting Type: Through Hole
• Wavelength - Dominant: 630nm
• Wavelength - Peak: 640nm
• Features: -
• Package / Case: 4-DIP (0.200", 5.08mm)
• Supplier Device Package: POWER LED
• Size / Dimension: 7.62mm L x 7.62mm W
• Height (Max): 6.50mm

패키지: 4-DIP (0.200", 5.08mm)

MV6300AZR

Fairchild/ON Semiconductor

LED YELLOW DIFFUSED 2SMD

• Color: Yellow
• Configuration: -
• Lens Color: Yellow
• Lens Transparency: Diffused
• Millicandela Rating: 3mcd
• Lens Style/Size: Round with Domed Top, 1.75mm
• Voltage - Forward (Vf) (Typ): 2V
• Current - Test: 10mA
• Viewing Angle: 50°
• Mounting Type: Surface Mount
• Wavelength - Dominant: -
• Wavelength - Peak: 585nm
• Features: -
• Package / Case: 2-SMD, Z-Bend
• Supplier Device Package: Z-Bend
• Size / Dimension: 2.20mm L x 2.10mm W
• Height (Max): 2.92mm

패키지: 2-SMD, Z-Bend

P6KE36A

Fairchild/ON Semiconductor

TVS DIODE 30.8VWM 49.9VC DO15

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

패키지: DO-204AC, DO-15, Axial

MOC3012SM

Fairchild/ON Semiconductor

OPTOISOLATOR 4.17KV TRIAC 6SMD

• Output Type: Triac
• Zero Crossing Circuit: No
• Number of Channels: 1
• Voltage - Isolation: 4170Vrms
• Voltage - Off State: 250V
• Static dV/dt (Min): -
• Current - LED Trigger (Ift) (Max): 5mA
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih): 100µA (Typ)
• Turn On Time: -
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Gull Wing
• Supplier Device Package: 6-SMD
• Approvals: UL

패키지: 6-SMD, Gull Wing

4N35W

Fairchild/ON Semiconductor

OPTOISO 5.3KV TRANS W/BASE 6DIP

• Number of Channels: 1
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (Min): 100% @ 10mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 2µs, 2µs
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor with Base
• Voltage - Output (Max): 30V
• Current - Output / Channel: -
• Voltage - Forward (Vf) (Typ): 1.18V
• Current - DC Forward (If) (Max): 100mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.400", 10.16mm)
• Supplier Device Package: 6-DIP

패키지: 6-DIP (0.400", 10.16mm)