페이지 5 - GeneSiC Semiconductor 제품 - 다이오드 - 브리지 정류기 | Heisener Electronics
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GeneSiC Semiconductor 제품 - 다이오드 - 브리지 정류기

기록 345
페이지  5/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
GBL10
GeneSiC Semiconductor

DIODE BRIDGE 1000V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고6,320
Standard
1000V
4A
1.1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot GBL08
GeneSiC Semiconductor

DIODE BRIDGE 800V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고21,084
Standard
800V
4A
1V @ 2A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot GBL06
GeneSiC Semiconductor

DIODE BRIDGE 600V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고129,756
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL04
GeneSiC Semiconductor

DIODE BRIDGE 400V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고4,688
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL01
GeneSiC Semiconductor

DIODE BRIDGE 100V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고4,592
Standard
100V
4A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBL610G
GeneSiC Semiconductor

DIODE BRIDGE 1000V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고5,280
Standard
1000V
6A
1.1V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL608G
GeneSiC Semiconductor

DIODE BRIDGE 800V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고4,960
Standard
800V
6A
1.1V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL606G
GeneSiC Semiconductor

DIODE BRIDGE 600V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고3,568
Standard
600V
6A
1.1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL604G
GeneSiC Semiconductor

DIODE BRIDGE 400V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고5,760
Standard
400V
6A
1.1V @ 6A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL603G
GeneSiC Semiconductor

DIODE BRIDGE 200V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 200A
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고7,168
Standard
200V
6A
1.1V @ 6A
5µA @ 200A
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL602G
GeneSiC Semiconductor

DIODE BRIDGE 100V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 100A
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고3,088
Standard
100V
6A
1.1V @ 6A
5µA @ 100A
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL601G
GeneSiC Semiconductor

DIODE BRIDGE 50V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 50A
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고4,064
Standard
50V
6A
1.1V @ 6A
5µA @ 50A
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL410G
GeneSiC Semiconductor

DIODE BRIDGE 1000V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고7,936
Standard
1000V
4A
1.1V @ 4A
5µA @ 1000V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBL408G
GeneSiC Semiconductor

DIODE BRIDGE 800V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고4,928
Standard
800V
4A
1.1V @ 4A
5µA @ 800V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
BR38
GeneSiC Semiconductor

DIODE BRIDGE 800V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고5,024
Standard
800V
3A
1V @ 1.5A
10µA @ 800V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
hot BR36
GeneSiC Semiconductor

DIODE BRIDGE 600V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고5,664
Standard
600V
3A
1V @ 1.5A
10µA @ 600V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
BR34
GeneSiC Semiconductor

DIODE BRIDGE 400V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고2,976
Standard
400V
3A
1V @ 1.5A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
BR32
GeneSiC Semiconductor

DIODE BRIDGE 200V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고5,600
Standard
200V
3A
1V @ 1.5A
10µA @ 200V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
hot BR310
GeneSiC Semiconductor

DIODE BRIDGE 1000V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고673,200
Standard
1000V
3A
1V @ 1.5A
10µA @ 1000V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
BR31
GeneSiC Semiconductor

DIODE BRIDGE 100V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고4,560
Standard
100V
3A
1V @ 1.5A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
BR305
GeneSiC Semiconductor

DIODE BRIDGE 50V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
패키지: 4-Square, BR-3
재고6,624
Standard
50V
3A
1V @ 1.5A
10µA @ 50V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
hot KBP210G
GeneSiC Semiconductor

DIODE BRIDGE 2A 1000V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고7,248
Standard
1000V
2A
1.1V @ 2A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP208G
GeneSiC Semiconductor

DIODE BRIDGE 2A 800V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고79,704
Standard
800V
2A
1.1V @ 2A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP206G
GeneSiC Semiconductor

DIODE BRIDGE 2A 600V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고103,896
Standard
600V
2A
1.1V @ 2A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP204G
GeneSiC Semiconductor

DIODE BRIDGE 2A 400V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고5,056
Standard
400V
2A
1.1V @ 2A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP203G
GeneSiC Semiconductor

DIODE BRIDGE 2A 200V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고5,584
Standard
200V
2A
1.1V @ 2A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP202G
GeneSiC Semiconductor

DIODE BRIDGE 2A 100V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고8,844
Standard
100V
2A
1.1V @ 2A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
hot KBP201G
GeneSiC Semiconductor

DIODE BRIDGE 2A 50V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고10,428
Standard
50V
2A
1.1V @ 2A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP