페이지 27 - GeneSiC Semiconductor 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH240100R	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고6,128	100V	240A	840mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH240100	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고3,152	100V	240A	840mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20045RL	GeneSiC Semiconductor	DIODE MODULE 45V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고5,600	45V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20045L	GeneSiC Semiconductor	DIODE MODULE 45V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고4,432	45V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20040RL	GeneSiC Semiconductor	DIODE MODULE 40V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67 HALF-PAK	재고6,160	40V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67 HALF-PAK	D-67	-
MBRH20040L	GeneSiC Semiconductor	DIODE MODULE 40V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고2,960	40V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH20035RL	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고3,104	35V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-	Chassis Mount	D-67	D-67	-
MBRH20035L	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고6,384	35V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-	Chassis Mount	D-67	D-67	-
MBRH20030RL	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고6,736	30V	200A	580mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20030L	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고5,024	30V	200A	580mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20020RL	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고3,840	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH20020L	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고4,800	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH15045RL	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고5,328	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
MBRH15045L	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고6,464	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
MBRH15040RL	GeneSiC Semiconductor	DIODE MODULE 40V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고6,624	40V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH15040L	GeneSiC Semiconductor	DIODE MODULE 40V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고5,280	40V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH15035RL	GeneSiC Semiconductor	DIODE MODULE 35V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고6,560	35V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-
MBRH15035L	GeneSiC Semiconductor	DIODE MODULE 35V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고7,360	35V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-
MBRH15030RL	GeneSiC Semiconductor	DIODE MODULE 30V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고2,496	30V	150A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-
MBRH15030L	GeneSiC Semiconductor	DIODE MODULE 30V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고7,792	30V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH15020RL	GeneSiC Semiconductor	DIODE MODULE 20V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고7,984	20V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH15020L	GeneSiC Semiconductor	DIODE MODULE 20V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고6,000	20V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
GB10SLT12-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 1200V 10A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,648	-	-	-	-	-	-	-	-	-	-	-
GB02SLT06-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 650V 2A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,240	-	-	-	-	-	-	-	-	-	-	-
GAP05SLT80-220	GeneSiC Semiconductor	DIODE SCHOTTKY 8KV 50MA AXIAL Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 8000V Current - Average Rectified (Io): 50mA (DC) Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 3.8µA @ 8000V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	패키지: Axial	재고2,224	8000V	50mA (DC)	4.6V @ 50mA	No Recovery Time > 500mA (Io)	0ns	3.8µA @ 8000V	25pF @ 1V, 1MHz	Through Hole	Axial	-	-55°C ~ 175°C
1N8028-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 9.4A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 9.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: 884pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	패키지: TO-257-3	재고5,840	1200V	9.4A (DC)	1.6V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	884pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8034-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 9.4A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 1107pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	패키지: TO-257-3	재고6,048	650V	9.4A (DC)	1.34V @ 10A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	1107pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8031-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A TO276 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-276AA Supplier Device Package: TO-276 Operating Temperature - Junction: -55°C ~ 250°C	패키지: TO-276AA	재고3,216	650V	1A	1.5V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	76pF @ 1V, 1MHz	Through Hole	TO-276AA	TO-276	-55°C ~ 250°C

MBRH240100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고6,128

100V

240A

840mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH240100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고3,152

100V

240A

840mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20045RL

GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고5,600

45V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20045L

GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고4,432

45V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20040RL

GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67 HALF-PAK

재고6,160

40V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Chassis Mount

D-67 HALF-PAK

D-67

-

MBRH20040L

GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고2,960

40V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Chassis Mount

D-67

-

MBRH20035RL

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고3,104

35V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 200V

-

Chassis Mount

D-67

-

MBRH20035L

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고6,384

35V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 200V

-

Chassis Mount

D-67

-

MBRH20030RL

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고6,736

30V

200A

580mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20030L

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고5,024

30V

200A

580mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20020RL

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고3,840

20V

200A

580mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MBRH20020L

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고4,800

20V

200A

580mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MBRH15045RL

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고5,328

45V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-

MBRH15045L

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고6,464

45V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-

MBRH15040RL

GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고6,624

40V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Chassis Mount

D-67

-

MBRH15040L

GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고5,280

40V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Chassis Mount

D-67

-

MBRH15035RL

GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고6,560

35V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 35V

-

Chassis Mount

D-67

-

MBRH15035L

GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고7,360

35V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 35V

-

Chassis Mount

D-67

-

MBRH15030RL

GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고2,496

30V

150A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-

MBRH15030L

GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고7,792

30V

150A

580mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH15020RL

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고7,984

20V

150A

580mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MBRH15020L

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고6,000

20V

150A

580mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

GB10SLT12-214

GeneSiC Semiconductor

SIC SCHOTTKY DIODE 1200V 10A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,648

-

GB02SLT06-214

GeneSiC Semiconductor

SIC SCHOTTKY DIODE 650V 2A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,240

-

GAP05SLT80-220

GeneSiC Semiconductor

DIODE SCHOTTKY 8KV 50MA AXIAL

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 8000V
Current - Average Rectified (Io): 50mA (DC)
Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 3.8µA @ 8000V
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 175°C

패키지: Axial

재고2,224

8000V

50mA (DC)

4.6V @ 50mA

No Recovery Time > 500mA (Io)

0ns

3.8µA @ 8000V

25pF @ 1V, 1MHz

Through Hole

Axial

-

-55°C ~ 175°C

1N8028-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 9.4A TO257

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 9.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: 884pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C

패키지: TO-257-3

재고5,840

1200V

9.4A (DC)

1.6V @ 10A

No Recovery Time > 500mA (Io)

0ns

20µA @ 1200V

884pF @ 1V, 1MHz

Through Hole

TO-257-3

TO-257

-55°C ~ 250°C

1N8034-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 9.4A TO257

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 9.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 650V
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C

패키지: TO-257-3

재고6,048

650V

9.4A (DC)

1.34V @ 10A

No Recovery Time > 500mA (Io)

0ns

5µA @ 650V

1107pF @ 1V, 1MHz

Through Hole

TO-257-3

TO-257

-55°C ~ 250°C

1N8031-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 650V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-276AA
Supplier Device Package: TO-276
Operating Temperature - Junction: -55°C ~ 250°C

패키지: TO-276AA

재고3,216

650V

1A

1.5V @ 1A

No Recovery Time > 500mA (Io)

0ns

5µA @ 650V

76pF @ 1V, 1MHz

Through Hole

TO-276AA

TO-276

-55°C ~ 250°C