페이지 12 - GeneSiC Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
MBRH20040RL	GeneSiC Semiconductor	DIODE MODULE 40V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67 HALF-PAK	재고6,160
1N8031-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A TO276 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-276AA Supplier Device Package: TO-276 Operating Temperature - Junction: -55°C ~ 250°C	패키지: TO-276AA	재고3,216
MURH10010	GeneSiC Semiconductor	DIODE MODULE 100V 100A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고2,896
MUR7040R	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AB, DO-5, Stud	재고4,704
1N1187R	GeneSiC Semiconductor	DIODE GEN PURP REV 300V 35A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-203AB, DO-5, Stud	재고5,504
GKN71/04	GeneSiC Semiconductor	DIODE GEN PURP 400V 95A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 95A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고6,512
FR6G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고3,584
1N3882	GeneSiC Semiconductor	DIODE GEN PURP 300V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,856
1N3891	GeneSiC Semiconductor	DIODE GEN PURP 200V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고6,336
MBRF500200R	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 250A TO244AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 250A Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	패키지: TO-244AB	재고7,360
FST63100M	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 30A D61-3M Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D61-3M Supplier Device Package: D61-3M	패키지: D61-3M	재고7,744
MBR30045CTRL	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 150A 2 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고2,000
MURT30060R	GeneSiC Semiconductor	DIODE MODULE 600V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,664
MBR40045CT	GeneSiC Semiconductor	DIODE MODULE 45V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,480
MBRT30020	GeneSiC Semiconductor	DIODE MODULE 20V 300A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고7,648
FST12030	GeneSiC Semiconductor	DIODE MODULE 30V 120A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	패키지: TO-249AB	재고6,672
MSRT100140(A)D	GeneSiC Semiconductor	DIODE GEN 1.4KV 100A 3 TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1400V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고3,376
MBR2X080A200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 80A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 80A Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,248
FST8345M	GeneSiC Semiconductor	DIODE MODULE 45V 80A D61-3M Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 80A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D61-3M Supplier Device Package: D61-3M	패키지: D61-3M	재고3,664
GBPC2501W	GeneSiC Semiconductor	DIODE BRIDGE 100V 25A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고3,840
KBU1002	GeneSiC Semiconductor	DIODE BRIDGE 200V 10A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: 4-SIP, KBU	재고3,056
GD2X75MPS17N	GeneSiC Semiconductor	DIODE MOD SIC 1700V 115A SOT227 Diode Configuration: 2 Independent Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io) (per Diode): 115A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: -	재고66
GD20MPS12H	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 39A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 39A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 737pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고9,507
MSRT20060AD	GeneSiC Semiconductor	DIODE MODULE GP 600V 200A 3TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: -	Request a Quote
MSRTA300140AD	GeneSiC Semiconductor	DIODE MODULE GP 1.4KV 3TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 1400 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: -	Request a Quote
GB05MPS33-263	GeneSiC Semiconductor	DIODE SIL CARB 3.3KV 14A TO263-7 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 3300 V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 3000 V Capacitance @ Vr, F: 288pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
MSRTA30060D	GeneSiC Semiconductor	DIODE MODULE GP 600V 300A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote
G2R1000MT33J	GeneSiC Semiconductor	SIC MOSFET N-CH 4A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 3300 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	재고11,016

MBRH20040RL

GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67 HALF-PAK

재고6,160

1N8031-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 650V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-276AA
Supplier Device Package: TO-276
Operating Temperature - Junction: -55°C ~ 250°C

패키지: TO-276AA

재고3,216

MURH10010

GeneSiC Semiconductor

DIODE MODULE 100V 100A D-67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고2,896

MUR7040R

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

재고4,704

1N1187R

GeneSiC Semiconductor

DIODE GEN PURP REV 300V 35A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

재고5,504

GKN71/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 95A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 95A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고6,512

FR6G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 6A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고3,584

1N3882

GeneSiC Semiconductor

DIODE GEN PURP 300V 6A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 15µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,856

1N3891

GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고6,336

MBRF500200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A TO244AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

패키지: TO-244AB

재고7,360

FST63100M

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 30A D61-3M

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: D61-3M
Supplier Device Package: D61-3M

패키지: D61-3M

재고7,744

MBR30045CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 2 TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고2,000

MURT30060R

GeneSiC Semiconductor

DIODE MODULE 600V 300A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,664

MBR40045CT

GeneSiC Semiconductor

DIODE MODULE 45V 400A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,480

MBRT30020

GeneSiC Semiconductor

DIODE MODULE 20V 300A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고7,648

FST12030

GeneSiC Semiconductor

DIODE MODULE 30V 120A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

패키지: TO-249AB

재고6,672

MSRT100140(A)D

GeneSiC Semiconductor

DIODE GEN 1.4KV 100A 3 TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고3,376

MBR2X080A200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 80A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,248

FST8345M

GeneSiC Semiconductor

DIODE MODULE 45V 80A D61-3M

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 80A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: D61-3M
Supplier Device Package: D61-3M

패키지: D61-3M

재고3,664

GBPC2501W

GeneSiC Semiconductor

DIODE BRIDGE 100V 25A GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고3,840

KBU1002

GeneSiC Semiconductor

DIODE BRIDGE 200V 10A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: 4-SIP, KBU

재고3,056

GD2X75MPS17N

GeneSiC Semiconductor

DIODE MOD SIC 1700V 115A SOT227

Diode Configuration: 2 Independent
Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io) (per Diode): 115A (DC)
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: -

재고66

GD20MPS12H

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 39A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 39A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고9,507

MSRT20060AD

GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: -

Request a Quote

MSRTA300140AD

GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 1400 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: -

Request a Quote

GB05MPS33-263

GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 14A TO263-7

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 3300 V
Current - Average Rectified (Io): 14A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

MSRTA30060D

GeneSiC Semiconductor

DIODE MODULE GP 600V 300A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

G2R1000MT33J

GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO263-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 3300 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

재고11,016